机构

• 半导体研究所 [7]
• 苏州纳米技术与纳米仿... [2]
• 生态环境研究中心 [1]
• 近代物理研究所 [1]

采集方式

• OAI收割 [7]
• iSwitch采集 [4]

内容类型

• 期刊论文 [11]

发表日期

• 2011 [1]
• 2010 [1]
• 2009 [6]
• 2008 [2]
• 2004 [1]

学科主题

• 半导体物理 [2]
• 半导体材料 [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 25 作者:  Sun, YF (孙云飞);  Sun, JD (孙建东);  Zhou, Y (周宇) 收藏  |  浏览/下载：45/0  |  提交时间：2012/08/24 aluminium compounds  gallium compounds  high electron mobility transistors  III-V semiconductors  photoconductivity  photodetectors  semiconductor device noise  terahertz wave detectors  wide band gap semiconductors   Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors 期刊论文  OAI收割 Applied Physics Letters, 2010, 期号: 6 作者:  Zhang BS (张宝顺);  Cai Y (蔡勇) 收藏  |  浏览/下载：212/64  |  提交时间：2010/12/31 aggregation  aluminium  aluminium compounds  gallium compounds  gold  high electron mobility transistors  III-V semiconductors  nickel  ohmic contacts  rapid thermal annealing  semiconductor-metal boundaries  surface morphology  surface roughness  titanium  transmission electron microscopy  wide band gap semiconductors  X-ray chemical analysis   Spin dynamics of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system 期刊论文  iSwitch采集 Physical review b, 2009, 卷号: 80, 期号: 19, 页码: 4 作者:  Luo, Haihui;  Qian, Xuan;  Ruan, Xuezhong;  Ji, Yang;  Umansky, Vladimir 收藏  |  浏览/下载：32/0  |  提交时间：2019/05/12 Aluminium compounds  Electron mobility  Electron spin polarisation  Exchange interactions (electron)  Excited states  Gallium arsenide  Iii-v semiconductors  Kerr magneto-optical effect  Magnetic moments  Optical rotation  Spin dynamics  Time resolved spectra  Two-dimensional electron gas   Dislocation core effect scattering in a quasitriangle potential well 期刊论文  iSwitch采集 Applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: 3 作者:  Xu, Xiaoqing;  Liu, Xianglin;  Yang, Shaoyan;  Liu, Jianming;  Wei, Hongyuan 收藏  |  浏览/下载：41/0  |  提交时间：2019/05/12 Aluminium compounds  Carrier density  Carrier mobility  Dislocation density  Dislocation scattering  Gallium compounds  Iii-v semiconductors  Semiconductor heterojunctions  Wide band gap semiconductors   Determination of mgo/aln heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文  iSwitch采集 Applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: 3 作者:  Yang, A. L.;  Song, H. P.;  Liu, X. L.;  Wei, H. Y.;  Guo, Y. 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Aluminium compounds  Conduction bands  Energy gap  High electron mobility transistors  Iii-v semiconductors  Magnesium compounds  Passivation  Semiconductor heterojunctions  Valence bands  Wide band gap semiconductors  X-ray photoelectron spectra   p-Type Conversion of ZnO Thin Films by Plasma Immersion Ion Implantation 期刊论文  OAI收割 ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 卷号: 12, 页码: H329-H332 作者:  Zhang, Shuyu;  Liang, Rongqing;  Ou, Qiongrong;  Wu, Xiaojing;  Jiang, Meifu   |  收藏  |  浏览/下载：19/0  |  提交时间：2018/05/31 aluminium  annealing  doping profiles  electrical resistivity  hole density  hole mobility  II-VI semiconductors  nitrogen  plasma immersion ion implantation  semiconductor doping  semiconductor thin films  sputter deposition  vacancies (crystal)  wide band gap semiconductors  zinc compounds   Dislocation core effect scattering in a quasitriangle potential well 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102 作者:  Wei HY 收藏  |  浏览/下载：249/104  |  提交时间：2010/03/08 aluminium compounds  carrier density  carrier mobility  dislocation density  dislocation scattering  gallium compounds  III-V semiconductors  semiconductor heterojunctions  wide band gap semiconductors   Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101 作者:  Wei HY;  Jiao CM;  Song HP 收藏  |  浏览/下载：245/41  |  提交时间：2010/03/08 aluminium compounds  conduction bands  energy gap  high electron mobility transistors  III-V semiconductors  magnesium compounds  passivation  semiconductor heterojunctions  valence bands  wide band gap semiconductors  X-ray photoelectron spectra   Dislocation scattering in alxga1-xn/gan heterostructures 期刊论文  iSwitch采集 Applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: 3 作者:  Xu, Xiaoqing;  Liu, Xianglin;  Han, Xiuxun;  Yuan, Hairong;  Wang, Jun 收藏  |  浏览/下载：36/0  |  提交时间：2019/05/12 Aluminium compounds  Dislocation density  Electron mobility  Gallium compounds  Iii-v semiconductors  Interface roughness  Semiconductor heterojunctions  Two-dimensional electron gas  Wide band gap semiconductors   Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：82/0  |  提交时间：2010/03/08 aluminium compounds  dislocation density  electron mobility  gallium compounds  III-V semiconductors  interface roughness  semiconductor heterojunctions  two-dimensional electron gas  wide band gap semiconductors