机构

• 半导体研究所 [14]
• 物理研究所 [5]
• 金属研究所 [3]
• 数学与系统科学研究院 [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [20]
• iSwitch采集 [4]

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浏览/检索结果: 共24条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序发表日期升序发表日期降序作者升序作者降序 Analysis of the second-order BDF scheme with variable steps for the molecular beam epitaxial model without slope selection 期刊论文  OAI收割 SCIENCE CHINA-MATHEMATICS, 2021, 页码: 16 作者:  Liao, Hong-Lin;  Song, Xuehua;  Tang, Tao;  Zhou, Tao   |  收藏  |   Epitaxial growth of ge0.975sn0.025 alloy films on si(001) substrates by molecular beam epitaxy 期刊论文  iSwitch采集 Acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: 5 作者:  Su Shao-Jian;  Wang Wei;  Zhang Guang-Ze;  Hu Wei-Xuan;  Bai An-Qi 收藏  |   Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 26 Hou, YN; Mei, ZX; Liang, HL; Ye, DQ; Liang, S; Gu, CZ; Du, XL 收藏  |   Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy 期刊论文  OAI收割 acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.28101 Su SJ; Wang W; Zhang GZ; Hu WX; Bai AQ; Xue CL; Zuo YH; Cheng BW; Wang QM 收藏  |   Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |   2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan   |  收藏  |   Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 optoelectronics letters, Optoelectronics Letters, 2011, 2011, 卷号: 7, 7, 期号: 5, 页码: 325-329, 325-329 作者:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng   |  收藏  |   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao   |  收藏  |   Magnetic anisotropies of laterally confined structures of epitaxial fe films on gaas (001) 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 7, 页码: 3 作者:  Meng, K. K.;  Lu, J.;  Wang, S. L.;  Meng, H. J.;  Zhao, J. H. 收藏  |   Co doping enhanced giant magnetocaloric effect in mn1-xcoxas films epitaxied on gaas (001) 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: 3 作者:  Xu, P. F.;  Nie, S. H.;  Meng, K. K. 收藏  |