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• 上海微系统与信息技术... [8]

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• OAI收割 [8]

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• 期刊论文 [8]

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• 2008 [2]
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浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Research on metastable electron traps in the modified SOI materials induced by Si ion implantation 期刊论文  OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 卷号: 26, 期号: 2, 页码: L1-L4 Zhang, EX; Yu, ZS; Cao, YG; Yang, H; Zhang, ZX; Wang, X 收藏  |  浏览/下载：19/0  |  提交时间：2011/11/04 SIMOX BURIED OXIDES  RAY PHOTOELECTRON-SPECTROSCOPY  RADIATION RESPONSE  OXYGEN  INSULATOR   Total dose radiation effects on SOINMOS transistors with different layouts 期刊论文  OAI收割 CHINESE PHYSICS C, 2008, 卷号: 32, 期号: 8, 页码: 645-648 Tian, H; Zhang, ZX; He, W; Yu, WJ; Wang, R; Chen, M 收藏  |  浏览/下载：13/0  |  提交时间：2012/03/24 BURIED OXIDES  BIAS   Research on ion implantation effect on SIMOX material modification technique by X-ray photoelectron spectroscopy 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 卷号: 257, 页码: 199-202 Zhanga, EX; Zhang, ZX; Chen, J; Song, ZR; Yang, H; He, W; Tian, H; Wang, X 收藏  |  浏览/下载：15/0  |  提交时间：2012/03/24 BURIED OXIDES  OXYGEN  NITROGEN  HARDNESS  DEFECTS  A-SIO2   A study on the total-dose response for modified silicon-on-insulator materials with the pseudo-MOS method 期刊论文  OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 3, 页码: 287-290 Zhang, EX; Sun, JY; Zhang, ZX; Qian, C; Jiang, J; Wang, X; En, YF; Luo, HW; Shi, Q; Zhang, XW 收藏  |  浏览/下载：32/0  |  提交时间：2012/03/24 SIMOX BURIED OXIDES  RAY PHOTOELECTRON-SPECTROSCOPY  OXYGEN IMPLANT  DEFECTS  A-SIO2   Improvement of the total-dose irradiation hardness in simox material implanted by F+ ions 期刊论文  OAI收割 PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1999, 卷号: 99, 期号: 3, 页码: 231-236 Gao, JX; Lin, CL; Zhu, DZ 收藏  |  浏览/下载：23/0  |  提交时间：2012/03/25 ELECTRON-SPIN-RESONANCE  BURIED OXIDES  TRAPPING CENTERS  SOI   A modification of formulas used in SOI capacitors analysis and its application in total dose radiation 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1998, 卷号: 145, 期号: 4, 页码: 307-317 Gao, JX; Yu, XF; Zhang, M; Lin, CL; Yan, RL 收藏  |  浏览/下载：22/0  |  提交时间：2012/03/25 SIMOX BURIED OXIDES  SILICON-ON-INSULATOR  OXYGEN  IMPLANT  DEVICES   The modification of SIMOX (separated by implantation of oxygen) material to improve the total-dose irradiation hardness 期刊论文  OAI收割 JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 卷号: 10, 期号: 20, 页码: 4393-4399 Gao, JX; Yu, XF; Zhang, M; Lin, CL; Yan, RL; Ren, DY 收藏  |  浏览/下载：8/0  |  提交时间：2012/03/25 BURIED OXIDES  SOI  SILICON  WAFERS   The effects of fluorine ion implantation on the formation of SIMOX structure 期刊论文  OAI收割 THIN SOLID FILMS, 1997, 卷号: 298, 期号: 1-2, 页码: 147-150 Zhu, SY; Lin, CL 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/25 BURIED OXIDES  SILICON  TRANSPORT  SI