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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [10]
物理研究所 [4]
上海微系统与信息技术... [1]
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期刊论文 [15]
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2011 [3]
2009 [1]
2008 [3]
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半导体材料 [5]
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InGaN/GaN based light-emitting diodes grown on maskless periodically grooved sapphire fabricated by wet chemical etching
期刊论文
OAI收割
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2011, 卷号: 13, 期号: 9-10, 页码: 1203
Yu, NS
;
Zhu, XL
;
Peng, MZ
;
Xing, ZG
;
Zhou, JM
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2013/09/18
EPITAXIAL LATERAL OVERGROWTH
VAPOR-PHASE EPITAXY
GAN
MICROSCOPY
DEPOSITION
DEFECTS
SINGLE
Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate
期刊论文
OAI收割
ENERGY & ENVIRONMENTAL SCIENCE, 2011, 卷号: 4, 期号: 8, 页码: 2625
Jiang, Y
;
Jia, HQ
;
Wang, WX
;
Wang, L
;
Chen, H
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  |  
浏览/下载:21/0
  |  
提交时间:2013/09/24
LATERAL EPITAXIAL OVERGROWTH
VAPOR-DEPOSITION
DENSITY GAN
WING-TILT
FILMS
DEVICES
A practical route towards fabricating GaN nanowire arrays
期刊论文
OAI收割
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ
;
Huang, J
;
Gong, XJ
;
Wang, JF
;
Xu, K
;
Qiu, YX
;
Cai, DM
;
Zhou, TF
;
Ren, GQ
;
Yang, H
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
CHEMICAL-VAPOR-DEPOSITION
WELL NANOROD ARRAYS
ULTRAVIOLET-LIGHT
GROWTH
NANOGENERATORS
DISLOCATIONS
BRIGHTNESS
LAYERS
EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR
期刊论文
OAI收割
modern physics letters b, 2009, 卷号: 23, 期号: 15, 页码: 1881-1887
Zhang B
;
Chen J
;
Wang X
;
Wu AM
;
Luo JX
;
Wang X
;
Zhang MA
;
Wu YX
;
Zhu JJ
;
Yang H
收藏
  |  
浏览/下载:82/0
  |  
提交时间:2010/03/08
GaN
epitaxial lateral overgrowth
Catalyst-Free Growth of Well Vertically Aligned GaN Needlelike Nanowire Array with Low-Field Electron Emission Properties
期刊论文
OAI收割
JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 卷号: 112, 期号: 48, 页码: 18821-18824
Lin, CT
;
Yu, GH
;
Wang, XZ
;
Cao, MX
;
Lu, HF
;
Gong, H
;
Qi, M
;
Li, AZ
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2012/03/24
EPITAXIAL LATERAL OVERGROWTH
NANOROD ARRAYS
Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates
期刊论文
OAI收割
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 7, 页码: 1719-1723
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
收藏
  |  
浏览/下载:95/1
  |  
提交时间:2010/03/08
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
IMPROVEMENT
NITRIDE
WET
Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs
期刊论文
OAI收割
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 11, 页码: art. no. 115106
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
收藏
  |  
浏览/下载:69/1
  |  
提交时间:2010/03/08
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
EFFICIENCY
Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates fabricated by wet chemical etching
期刊论文
OAI收割
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 8, 页码: 2243
Yu, NS
;
Guo, LW
;
Chen, H
;
Xing, ZG
;
Wang, J
;
Zhu, XL
;
Peng, MZ
;
Yan, JF
;
Jia, HQ
;
Zhou, JM
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2013/09/18
EPITAXIAL LATERAL OVERGROWTH
MOLECULAR-BEAM EPITAXY
GAN FILMS
VAPOR-DEPOSITION
PHOTOLUMINESCENCE
DEFECTS
SI(111)
SINGLE
LAYERS
Origin of selective growth of GaN on maskless V-grooved sapphire substrates by metalorganic chemical vapor deposition
期刊论文
OAI收割
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 卷号: 44, 期号: 28-32, 页码: L982
Wang, J
;
Guo, LW
;
Jia, HQ
;
Xing, ZG
;
Wang, Y
;
Chen, H
;
Zhou, JM
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2013/09/24
EPITAXIAL LATERAL OVERGROWTH
DENSITY GAN
GALLIUM NITRIDE
DIODES
LAYER
Structural characterization of epitaxial lateral overgrown gan on patterned gan/gaas(001) substrates
期刊论文
iSwitch采集
Journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72
作者:
Shen, XM
;
Fu, Y
;
Feng, G
;
Zhang, BS
;
Feng, ZH
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2019/05/12
Transmission electron microscopy
X-ray diffraction
Epitaxial lateral overgrowth
Metalorganic vapor phase epitaxy
Cubic gallium nitride