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浏览/检索结果: 共49条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文  OAI收割 Acs Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704 作者:  Feng, M. X.;  Li, Z. C.;  Wang, J.;  Zhou, R.;  Sun, Q.   |  收藏  |   Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 期号: 15 作者:  Yang, H(杨辉);  Li, DY(李德尧);  Zhang, SM(张书明);  Wang, HB(王怀兵);  Liu, JP（刘建平） 收藏  |   Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure 期刊论文  OAI收割 Journal of Luminescence, 2011, 卷号: 131, 期号: 4, 页码: 825-828 J. C. Sun; Q. J. Feng; J. M. Bian; D. Q. Yu; M. K. Li; C. R. Li; H. W. Liang; J. Z. Zhao; H. Qiu; G. T. Du 收藏  |   Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping 期刊论文  OAI收割 Acs Nano, 2011, 卷号: 5, 期号: 5, 页码: 3591-3598 Y. B. Tang; X. H. Bo; J. Xu; Y. L. Cao; Z. H. Chen; H. S. Song; C. P. Liu; T. F. Hung; W. J. Zhang; H. M. Cheng; I. Bello; S. T. Lee; C. S. Lee 收藏  |   Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文  OAI收割 materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100 Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG 收藏  |   Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |   An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application 期刊论文  iSwitch采集 Solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者:  Wang, X. L.;  Chen, T. S.;  Xiao, H. L.;  Tang, J.;  Ran, J. X. 收藏  |   An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文  OAI收割 SOLID-STATE ELECTRONICS, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者:  Wang, X. L.;  Chen, T. S.;  Xiao, H. L.;  Tang, J.;  Ran, J. X.   |  收藏  |   An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文  OAI收割 solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者:  Zhang ML;  Hou QF 收藏  |   Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 9 Mei, F; Fu, QM; Peng, T; Liu, C; Peng, MZ; Zhou, JM 收藏  |