中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共51条,第1-10条 帮助

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Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers 期刊论文  OAI收割
MATERIALS LETTERS, 2018, 卷号: 216, 页码: 224, 227
作者:  
Li, Guanjie
  |  收藏  |  浏览/下载:25/0  |  提交时间:2018/12/28
Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures 期刊论文  OAI收割
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 3
作者:  
Bo, Baoxue;  Li, Junmei;  Guo, Wei;  Jiang, Jie'an;  Gao, Pingqi
  |  收藏  |  浏览/下载:50/0  |  提交时间:2018/12/04
Reinventing a p-type doping process for stable ZnO light emitting devices 期刊论文  OAI收割
Journal of Physics D-Applied Physics, 2018, 卷号: 51, 期号: 22, 页码: 4
作者:  
Xie, X. H.;  Li, B. H.;  Zhang, Z. Z.;  Shen, D. Z.
  |  收藏  |  浏览/下载:25/0  |  提交时间:2019/09/17
Dislocation-Induced Nanoparticle Decoration on a GaN Nanowire 期刊论文  OAI收割
Acs Applied Materials & Interfaces, 2015, 卷号: 7, 期号: 4, 页码: 2790-2796
B.; Yuan Yang, F.; Liu, Q. Y.; Huang, N.; Qiu, J. H.; Staedler, T.; Liu, B. D.; Jiang, X.
收藏  |  浏览/下载:29/0  |  提交时间:2015/05/08
Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer 期刊论文  OAI收割
Journal of Applied Physics, 2012, 卷号: 112, 期号: 8
P. F. Yan; K. Du; M. L. Sui
收藏  |  浏览/下载:101/0  |  提交时间:2013/02/05
First principles study the ferromagnetic properties and electronic structure of boron doped ZnSe 期刊论文  OAI收割
Solid State Communications, 2012, 卷号: 152, 期号: 16, 页码: 1551-1555
S. W. Fan; L. J. Ding; Z. L. Wang; K. L. Yao
收藏  |  浏览/下载:24/0  |  提交时间:2013/02/05
Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping 期刊论文  OAI收割
Acs Nano, 2011, 卷号: 5, 期号: 5, 页码: 3591-3598
Y. B. Tang; X. H. Bo; J. Xu; Y. L. Cao; Z. H. Chen; H. S. Song; C. P. Liu; T. F. Hung; W. J. Zhang; H. M. Cheng; I. Bello; S. T. Lee; C. S. Lee
收藏  |  浏览/下载:35/0  |  提交时间:2012/04/13
Tuning Surface Wettability of In(x)Ga((1-x))N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination 期刊论文  OAI收割
Langmuir, 2011, 卷号: 27, 期号: 21, 页码: 13220-13225
作者:  
Su RG(苏瑞巩);  Liu HB;  Kong T;  Song Q;  Li N(李宁)
收藏  |  浏览/下载:20/0  |  提交时间:2012/04/01
Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD 期刊论文  OAI收割
Applied Surface Science, 2010, 卷号: 257, 期号: 4, 页码: 1181-1184
作者:  
Qiu YX (邱永鑫);  Huang J (黄俊);  Xu K (徐科)
收藏  |  浏览/下载:192/63  |  提交时间:2011/03/13
Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD 期刊论文  OAI收割
JOURNAL OF MATERIALS SCIENCE, 2010, 卷号: 45, 期号: 6, 页码: 1503
Yu, NS; Zhu, XL; Peng, MZ; Zhou, JM
收藏  |  浏览/下载:17/0  |  提交时间:2013/09/23