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浏览/检索结果: 共47条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The Evaluation of Interface Quality in HfO2 Films Probed by Time-Dependent Second-Harmonic Generation 期刊论文  OAI收割 MATERIALS, 2024, 卷号: 17 作者:  Zhang, Libo;  Ye, Li;  Zhao, Weiwei;  Huang, Chongji;  Liu, Xue   |  收藏  |  浏览/下载：4/0  |  提交时间：2024/11/22 time-dependent second-harmonic generation  HfO2 film  fixed charge density  interface state density  capacitance-voltage/conductance-voltage   The origin of the 500 nm luminescence band related to oxygen vacancies in ZrO2 期刊论文  OAI收割 JOURNAL OF LUMINESCENCE, 2021, 卷号: 237 作者:  Wang, Ting-Shun;  Wang, Guang-Fu;  Qiu, Meng-Lin;  Cheng, Wei;  Zhang, Jin-Fu   |  收藏  |  浏览/下载：26/0  |  提交时间：2021/12/01 THIN-FILMS  PHOTOLUMINESCENCE PROPERTIES  DEFECTS  PHOSPHORESCENCE  EMISSION  TITANIUM  HFO2   The origin of the 500 nm luminescence band related to oxygen vacancies in ZrO2 期刊论文  OAI收割 JOURNAL OF LUMINESCENCE, 2021, 卷号: 237 作者:  Wang, Ting-Shun;  Wang, Guang-Fu;  Qiu, Meng-Lin;  Cheng, Wei;  Zhang, Jin-Fu   |  收藏  |  浏览/下载：23/0  |  提交时间：2021/12/01 THIN-FILMS  PHOTOLUMINESCENCE PROPERTIES  DEFECTS  PHOSPHORESCENCE  EMISSION  TITANIUM  HFO2   Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 459, 页码: 143-147 作者:  Li, Zongzhen;  Liu, Tianqi;  Bi, Jinshun;  Yao, Huijun;  Zhang, Zhenxing   |  收藏  |  浏览/下载：25/0  |  提交时间：2022/01/19 High-k HfO2  Heavy ion irradiation  Reliability  Charge trapping  Oxygen vacancy   Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 10, 页码: 1634-1637 作者:  Li, Zongzhen;  Liu, Jie;  Zhai, Pengfei;  Liu, Tianqi;  Bi, Jinshun   |  收藏  |  浏览/下载：22/0  |  提交时间：2022/01/19 HfO2  heavy ion irradiation  reliability degradation  crystallization   The Optical Absorption and Photoluminescence Characteristics of Evaporated and IAD HfO2 Thin Films 期刊论文  OAI收割 COATINGS, 2019, 卷号: 9, 期号: 5 作者:  Kong, Mingdong;  Li, Bincheng;  Guo, Chun;  Zeng, Peng;  Wei, Ming   |  收藏  |  浏览/下载：14/0  |  提交时间：2021/05/06 HfO2 thin films  optical absorption  photoluminescence  electron-beam deposition  ion-assisted deposition (IAD)   Laser-induced damage threshold in HfO2/SiO2 multilayer films irradiated by beta-ray 期刊论文  OAI收割 CHINESE PHYSICS B, 2019, 卷号: 28, 页码: 024215 作者:     |  收藏  |  浏览/下载：54/0  |  提交时间：2019/04/02 beta-ray irradiation  HfO2/SiO2 multilayer film  residual stress  laser-induced damage threshold   The effect of hfo2 on the magnetic anisotropy, electrical structure and microstructure of cofeb/mgo films 期刊论文  iSwitch采集 Journal of alloys and compounds, 2017, 卷号: 725, 页码: 425-432 作者:  Li, Minghua;  Shi, Hui;  Chen, Xi;  Fang, Shuai;  Han, Gang 收藏  |  浏览/下载：52/0  |  提交时间：2019/04/23 Hfo2  Cofeb/mgo  Magnetic anisotropy  Film defects  Oxygen migration   The effect of HfO2 on the magnetic anisotropy, electrical structure and microstructure of CoFeB/MgO films 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 725, 页码: 425-432 作者:  Zhang, P;  Shi, H;  Li, MH;  Chen, X;  Fang, S   |  收藏  |  浏览/下载：28/0  |  提交时间：2019/08/27 HfO2  CoFeB/MgO  Magnetic anisotropy  Film defects  Oxygen migration   Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 679, 期号: 无, 页码: 115-121 作者:  Zheng, C. Y.;  He, G.;  Chen, X. F.;  Liu, M.;  Lv, J. G. 收藏  |  浏览/下载：26/0  |  提交时间：2017/10/18 Band Offset  Hfo2/ingazno4 Heterojunctions  X-ray Photoelectron Spectroscopy  Thin Film Transistors  Electrical Properties  Mos Capacitor