中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共14条,第1-10条 帮助

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Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature 期刊论文  OAI收割
MATERIALS, 2020, 卷号: 13, 期号: 24
作者:  
Wang, Tao;  Yang, Zhen;  Li, Bingsheng;  Xu, Shuai;  Liao, Qing
  |  收藏  |  浏览/下载:8/0  |  提交时间:2021/12/01
Study on vacancy-type defects in SIMP steel induced by separate and sequential H and He ion implantation 期刊论文  OAI收割
JOURNAL OF NUCLEAR MATERIALS, 2019, 卷号: 520, 页码: 131-139
作者:  
Zhang, Tongmin;  Wang, Zhiguang;  Cao, Xingzhong;  Lu, Eryang;  Jin, Shuoxue
  |  收藏  |  浏览/下载:84/0  |  提交时间:2019/11/10
6H-SiC blistering efficiency as a function of the hydrogen implantation fluence 期刊论文  OAI收割
APPLIED SURFACE SCIENCE, 2019, 卷号: 466, 页码: 141-150
作者:  
Daghbouj, N.
  |  收藏  |  浏览/下载:49/0  |  提交时间:2019/03/27
Effect of implantation temperature on exfoliation of H-2(+)-implanted Si 期刊论文  OAI收割
VACUUM, 2014, 卷号: 109, 页码: 1-7
作者:  
Li, B. S.;  Wang, Z. G.;  Du, Y. Y.;  Wei, K. F.;  Yao, C. F.
  |  收藏  |  浏览/下载:25/0  |  提交时间:2018/07/05
Effects of the surface oxide layer on platelet growth in H-2(+)-implanted Si 期刊论文  OAI收割
VACUUM, 2014, 卷号: 102, 页码: 5-11
作者:  
Li, B. S.;  Wang, Z. G.
  |  收藏  |  浏览/下载:20/0  |  提交时间:2018/07/05
Implantation temperature and thermal annealing behavior in H-2(+)-implanted 6H-SiC 期刊论文  OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 卷号: 316, 页码: 239-244
作者:  
Li, B. S.;  Wang, Z. G.;  Jin, J. F.
  |  收藏  |  浏览/下载:30/0  |  提交时间:2018/07/05
The use of nanocavities for the fabrication of ultrathin buried oxide layers 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 1, 页码: 11903-11903
Ou, X; Kogler, R; Mucklich, A; Skorupa, W; Moller, W; Wang, X; Vines, L
收藏  |  浏览/下载:26/0  |  提交时间:2012/03/24
Photoluminescence properties of c+ implanted epitaxial si annealed in hydrogen ambience 期刊论文  iSwitch采集
Rare metal materials and engineering, 2005, 卷号: 34, 期号: 2, 页码: 256-258
作者:  
Wang, Q;  Li, YG;  Shi, LW;  Xue, CS
收藏  |  浏览/下载:26/0  |  提交时间:2019/05/12
Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma 期刊论文  OAI收割
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 卷号: 20, 期号: 4, 页码: 1570-1573
Chen, J; Chen, M; Dong, YM; Wang, X; Zheng, ZH; Wang, X
收藏  |  浏览/下载:12/0  |  提交时间:2012/03/24
H distribution and strain evolution in SiGe/Si heterostructure implanted by H dimers 期刊论文  OAI收割
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 卷号: 16, 期号: 28-29, 页码: 4199-4202
An, ZH; Men, CL; Liu, WL; Zhang, M; Wu, YJ; Xie, XY; Chu, PK; Lin, CL
收藏  |  浏览/下载:17/0  |  提交时间:2012/03/24