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CAS IR Grid
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半导体研究所 [50]
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OAI收割 [31]
iSwitch采集 [19]
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期刊论文 [47]
会议论文 [3]
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2010 [4]
2008 [3]
2006 [2]
2005 [3]
2003 [2]
2001 [3]
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学科主题
半导体材料 [18]
半导体物理 [9]
光电子学 [4]
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Formation trends of ordered self-assembled nanoislands on stepped substrates
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.)
;
Zhu HL (Zhu H. L.)
;
Kong DH (Kong D. H.)
;
Wang W (Wang W.)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/11/14
CHEMICAL-VAPOR-DEPOSITION
INAS QUANTUM DOTS
MOLECULAR-BEAM EPITAXY
GAAS
SURFACES
ISLANDS
GROWTH
FABRICATION
MIGRATION
ARRAYS
Different growth mechanisms of bimodal In As/GaAs QDs
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 308-311
作者:
Ye XL
;
Zhou XL
收藏
  |  
浏览/下载:44/3
  |  
提交时间:2011/07/05
INAS QUANTUM DOTS
GAAS(001)
RELAXATION
TRANSITION
GAAS
The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy
期刊论文
OAI收割
optics communications, OPTICS COMMUNICATIONS, 2010, 2010, 卷号: 283, 283, 期号: 7, 页码: 1510-1513, 1510-1513
作者:
Huang X
;
Zhang XH
;
Zhu YG
;
Li T
;
Han LF
  |  
收藏
  |  
浏览/下载:156/2
  |  
提交时间:2010/04/22
InAs quantum dots
Inas Quantum Dots
Nonlinear Refraction
Reflection Z-scan
Reflection Z-scan
Optical Nonlinearities
2-photon Absorption
Saturable Absorber
Well Structures
Single-beam
Electroabsorption
Dispersion
Solids
Gaas
Nonlinear refraction
Reflection Z-scan
REFLECTION Z-SCAN
OPTICAL NONLINEARITIES
2-PHOTON ABSORPTION
SATURABLE ABSORBER
WELL STRUCTURES
SINGLE-BEAM
ELECTROABSORPTION
DISPERSION
SOLIDS
GAAS
Temperature dependence of hole spin relaxation in ultrathin InAs monolayers
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 2010, 卷号: 42, 42, 期号: 5, 页码: 1597-1600, 1597-1600
作者:
Li T
;
Zhang XH
;
Zhu YG
;
Huang X
;
Han LF
  |  
收藏
  |  
浏览/下载:87/0
  |  
提交时间:2010/04/28
Ultrathin InAs monolayer
Ultrathin Inas Monolayer
Hole Spin Relaxation
Dp Mechanism
Semiconductor Quantum Dots
Wells
Gaas
Hole spin relaxation
DP mechanism
SEMICONDUCTOR QUANTUM DOTS
WELLS
GAAS
Optimizing the gaas capping layer growth of 1.3 mu m inas/gaas quantum dots by a combined two-temperature and annealing process at low temperatures
期刊论文
iSwitch采集
Journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472
作者:
Yang, Tao
;
Nishioka, Masao
;
Arakawa, Yasuhiko
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
Metalorganic chemical vapor deposition
Quantum dots
Inas
Gaas
Laser diodes
Photoluminescence and lasing properties of inas/gaas quantum dots grown by metal-organic chemical vapour deposition
期刊论文
iSwitch采集
Chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4300-4304
作者:
Liang Song
;
Zhu Hong-Liang
;
Pan Jiao-Qing
;
Zhao Ling-Juan
;
Wang Lu-Feng
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2019/05/12
Metal-organic chemical vapour deposition
Inas/gaas quantum dots
Laser
Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures
期刊论文
OAI收割
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472
作者:
Yang T
收藏
  |  
浏览/下载:261/54
  |  
提交时间:2010/03/08
Metalorganic chemical vapor deposition
Quantum dots
InAs
GaAs
Laser diodes
Selective growth of inas islands on patterned gaas (100) substrate
期刊论文
iSwitch采集
Superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453
作者:
Cui, CX
;
Chen, YH
;
Ren, YY
;
Xu, B
;
Jin, P
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/05/12
Patterned substrate
Molecular beam epitaxy
Quantum dots
Inas
Gaas
Ingaas
Selective growth of InAs islands on patterned GaAs (100) substrate
期刊论文
OAI收割
superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453
作者:
Xu B
;
Jin P
收藏
  |  
浏览/下载:100/0
  |  
提交时间:2010/04/11
patterned substrate
molecular beam epitaxy
quantum dots
InAs
GaAs
InGaAs
ASSEMBLED QUANTUM DOTS
MOLECULAR-BEAM EPITAXY
FABRICATION
1.3 mu m inas/gaas self-assembled quantum dots grown on in0.2ga0.8as-gaas combined strain-buffer layer
期刊论文
iSwitch采集
Journal of infrared and millimeter waves, 2005, 卷号: 24, 期号: 5, 页码: 324-327
作者:
Fang, ZD
;
Gong, Z
;
Miao, ZH
;
Niu, ZC
;
Shen, GD
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2019/05/12
Inas/gaas quantum dots
Combined strain-buffer layer
Photoluminescence
Atomic force microscopy