机构

• 半导体研究所 [14]
• 长春光学精密机械与物... [5]
• 物理研究所 [2]
• 上海微系统与信息技术... [2]
• 中国科学院大学 [1]

采集方式

• OAI收割 [15]
• iSwitch采集 [9]

内容类型

• 期刊论文 [19]
• 会议论文 [5]

发表日期

• 2016 [1]
• 2013 [2]
• 2012 [1]
• 2009 [2]
• 2008 [1]
• 2007 [2]
• 更多

学科主题

• 半导体材料 [4]
• 半导体物理 [2]
• Physics [1]
• Physics, C... [1]
• 光电子学 [1]

筛选

浏览/检索结果: 共24条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Detailed study of the influence of ingaas matrix on the strain reduction in the inas dot-in-well structure 期刊论文  iSwitch采集 Nanoscale research letters, 2016, 卷号: 11, 期号: 1 作者:  Wang,Peng;  Chen,Qimiao;  Wu,Xiaoyan;  Cao,Chunfang;  Wang,Shumin 收藏  |  浏览/下载：41/0  |  提交时间：2019/05/09 Quantum dots  Inas/ingaas  Dot-in-well  Ingaas matrix  Photoluminescence  Finite element  Afm  Tem   Molecular beam epitaxy growth of peak wavelength-controlled ingaas/algaas quantum wells for 4.3-μm mid-wavelength infrared detection 期刊论文  iSwitch采集 Nanoscale research letters, 2013, 卷号: 8, 期号: 1 作者:  Shi,Zhenwu;  Wang,Lu;  Zhen,Honglou;  Wang,Wenxin;  Chen,Hong 收藏  |  浏览/下载：43/0  |  提交时间：2019/05/09 Molecular beam epitaxy  Quantum well infrared detector  Ingaas/algaas quantum well   Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-mu m mid-wavelength infrared detection 期刊论文  OAI收割 NANOSCALE RESEARCH LETTERS, 2013, 卷号: 8 Shi, ZW; Wang, L; Zhen, HL; Wang, WX; Chen, H 收藏  |  浏览/下载：23/0  |  提交时间：2014/01/16 Molecular beam epitaxy  Quantum well infrared detector  InGaAs/AlGaAs quantum well   Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well 期刊论文  OAI收割 SOLID STATE COMMUNICATIONS, 2012, 卷号: 152, 期号: 12, 页码: 1042-1046 Gao, KH; Lin, T; Wei, LM; Liu, XZ; Chen, X; Yu, G; Gu, Y; Zhang, YG; Dai, N; Chu, JH 收藏  |  浏览/下载：17/0  |  提交时间：2013/04/17 InGaAs/InAlAs quantum well  Spin-orbit coupling  Rashba spin splitting   Growth and characterization of gainnas by molecular beam epitaxy using a nitrogen irradiation method 期刊论文  iSwitch采集 Journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727 作者:  Zhao, H.;  Wang, S. M.;  Zhao, Q. X.;  Sadeghi, M.;  Larsson, A. 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Quantum well  Dilute nitride  Rapid thermal annealing  Ingaas  Gainnas   Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method 期刊论文  OAI收割 journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727 Zhao H; Wang SM; Zhao QX; Sadeghi M; Larsson A 收藏  |  浏览/下载：186/35  |  提交时间：2010/03/08 Quantum well  Dilute nitride  Rapid thermal annealing  InGaAs  GaInNAs   High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang X.;  Wang L.;  Wang L.;  Wang L.;  Wang Y. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle  the average driving power in the laser chip is quite low  so the heating effect cemiconductor laser is very small  using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.   Metamorphic ingaas quantum wells for light emission at 1.3-1.6 mu m 期刊论文  iSwitch采集 Thin solid films, 2007, 卷号: 515, 期号: 10, 页码: 4348-4351 作者:  Wang, S. M.;  Tangring, I.;  Gu, Q. F. 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 Metamorphic  Ingaas quantum well  Light emission   High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology  the devices have been fabricated in experiment  and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W  and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.   Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers 期刊论文  iSwitch采集 Acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 5216-5220 作者:  Pan Jiao-Qing;  Zhao Qian;  Zhu Hong-Liang;  Zhao Ling-Juan;  Ding Ying 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Mocvd  Ingaas/ingaasp  Strained quantum well  Distributed feedback laser