机构

• 半导体研究所 [8]
• 上海微系统与信息技术... [2]
• 物理研究所 [1]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [10]
• 会议论文 [1]

发表日期

• 2009 [1]
• 2008 [2]
• 2005 [1]
• 2003 [2]
• 2002 [1]
• 1999 [4]
• 更多

学科主题

• 半导体物理 [5]
• 半导体材料 [3]
• Applied [1]
• Physics [1]
• Physics, M... [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 5, 页码: 53710-53710 Jiang, LM; Wang, HL; Wu, HT; Gong, Q; Feng, SL 收藏  |   External electric field elect on hydrogenic donor impurity in zinc-blende InGaN quantum dot 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 8, 页码: 3017-3020 Jiang, LM; Wang, HL; Wu, HT; Gong, Q; Feng, SL 收藏  |   Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 93, 期号: 1, 页码: art. no. 011107 Wang, BR; Sun, BQ; Ji, Y; Dou, XM; Xu, ZY; Wang, ZM; Salamo, GJ 收藏  |   Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density 期刊论文  OAI收割 journal of applied physics, 2005, 卷号: 98, 期号: 8, 页码: art.no.084305 作者:  Duan RF 收藏  |   Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 257, 期号: 3-4, 页码: 326 Zheng, XH; Chen, H; Yan, ZB; Yu, HB; Li, DS; Han, YJ; Huang, Q; Zhou, JM 收藏  |   Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of vacuum science & technology a, 2003, 卷号: 21, 期号: 4, 页码: 838-841 Qu BZ; Zhu QS; Sun XH; Wan SK; Wang ZG; Nagai H; Kawaguchi Y; Hiramatsu K; Sawaki N 收藏  |   Optical properties of AIInGaN quaternary alloys 会议论文  OAI收割 conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002 Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK 收藏  |   A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well 期刊论文  OAI收割 journal of applied physics, 1999, 卷号: 86, 期号: 3, 页码: 1456-1459 Kong MY; Wang XL; Pan D; Zeng YP; Wang J; Ge WK 收藏  |   Exciton dynamics in self-organized InAs/GaAs quantum dots 期刊论文  OAI收割 acta physica sinica, 1999, 卷号: 48, 期号: 4, 页码: 744-750 Lu ZD; Li Q; Xu JZ; Zheng BZ; Xu ZY; Ge WK 收藏  |   Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) A substrate 期刊论文  OAI收割 acta physica sinica, 1999, 卷号: 48, 期号: 8, 页码: 1541-1546 作者:  Xu B 收藏  |