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浏览/检索结果: 共39条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Effect of oxygen partial pressure and temperature on NTC characteristics of Mn1.56Co0.96Ni0.48O4 thin films grown on SrTiO3 (100) by laser MBE 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 卷号: 611, 期号: 1, 页码: 100-103 作者:  Jiang CP(蒋春萍) 收藏  |  浏览/下载：22/0  |  提交时间：2014/11/27 NTC film  Laser MBE  Epitaxial growth  Electrical properties   Effect of oxygen partial pressure and temperature on NTC characteristics of Mn1.56Co0.96Ni0.48O4 thin films grown on SrTiO3 (100) by laser MBE 期刊论文  OAI收割 Journal of Alloys and Compounds, 2014, 卷号: 611, 期号: 10, 页码: 100-103 作者:  Xie, Yahong;  Ji, Guang;  Bu, Haijun;  Kong, Wenwen;  Gao, Bo   |  收藏  |  浏览/下载：17/0  |  提交时间：2014/11/11 Ntc Film  Laser Mbe  Epitaxial Growth  Electrical Properties   Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE) 会议论文  OAI收割 2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China Yang X.; Su S.; Yi X.; Mei T. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural  electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing  and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance  Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications  Switzerland.   MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者:  Jia CH;  Song HP 收藏  |  浏览/下载：129/2  |  提交时间：2011/07/05 Anisotropy  Crystal morphology  Metalorganic chemical vapor deposition  a-Plane InN  INDIUM NITRIDE  MOVPE GROWTH  CUBIC INN  SAPPHIRE  GAN  MBE   Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering 期刊论文  OAI收割 Applied Surface Science, 2010, 卷号: 256, 期号: 6, 页码: 1812-1816 H. He, Y. G. Cao, R. L. Fu, W. Guo, Z. Huang, M. L. Wang, C. G. Huang, J. Q. Huang and H. Wang 收藏  |  浏览/下载：23/0  |  提交时间：2012/11/02 semiconducting III-V materials  InAlN  optical properties  magnetron  sputtering  optical-properties  electronic-structure  absorption-edge  mbe-growth  thin-films  alxin1-xn  sapphire  epitaxy   Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文  OAI收割 applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Cui LJ (Cui Lijie); Li YB (Li Yanbo) 收藏  |  浏览/下载：169/17  |  提交时间：2010/07/05 ZnTe  Molecular beam epitaxy  Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  VAPOR-PHASE EPITAXY  N-TYPE ZNTE  MBE GROWTH  100 GAAS  ZNSE  LAYERS  SURFACE  TEMPERATURE  SUBSTRATE  EPILAYERS   A buffer layer for ZnO film growth on sapphire 期刊论文  OAI收割 SURFACE SCIENCE, 2008, 卷号: 602, 期号: 14, 页码: 2600 Zheng, K; Guo, QL; Wang, EG 收藏  |  浏览/下载：22/0  |  提交时间：2013/09/17 MOLECULAR-BEAM EPITAXY  CHEMICAL-VAPOR-DEPOSITION  ASSISTED MBE GROWTH  IRON-OXIDE LAYERS  THIN-FILMS  GAN  ALPHA-AL2O3(0001)  HETEROEPITAXY  SUBSTRATE  QUALITY   Application of high-concentration ozone in the preparation of Bi-based oxide thin films by molecular beam epitaxy 期刊论文  OAI收割 ACTA METALLURGICA SINICA, 2008, 卷号: 44, 期号: 6, 页码: 647-651 作者:  Zhang Bingsen;  Yu Xiaoming;  Sun Xiaguang;  Li Maolin;  Zhang Caibei   |  收藏  |  浏览/下载：18/0  |  提交时间：2021/02/02 GROWTH  DEPOSITION  GENERATOR  PRESSURE  INSITU  LAYER  ozone  concentrating apparatus  Bi-based oxide thin film  molecular beam epitaxy (MBE)   Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Miao, ZH (Miao, Zhenhua); Gong, Z (Gong, Zheng); Fang, ZD (Fang, Zhidan); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：93/21  |  提交时间：2010/03/29 atomic hydrogen  molecular beam epitaxy  step arrays  MOLECULAR-BEAM EPITAXY  ATOMIC-HYDROGEN  VICINAL SURFACE  QUANTUM DOTS  GROWTH  TEMPERATURE  IRRADIATION  MECHANISM  MBE   Study on in-plane optical anisotropy of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice by reflectance difference spectroscopy - art. no. 071908 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 88, 期号: 7, 页码: art.no.0071908 Zhao L; Zuo YH; Shi WH; Wang QM; Chen YH; Wang HN 收藏  |  浏览/下载：71/0  |  提交时间：2010/04/11 QUANTUM-WELL STRUCTURES  LAYER SUPERLATTICES  HETEROSTRUCTURES  SIGE  INTERFACE  GROWTH  SEMICONDUCTORS  MBE