机构

• 半导体研究所 [3]
• 新疆天文台 [2]
• 近代物理研究所 [2]
• 物理研究所 [1]
• 兰州化学物理研究所 [1]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [6]
• 会议论文 [3]

发表日期

• 2020 [1]
• 2017 [1]
• 2015 [1]
• 2011 [3]
• 2010 [1]
• 2008 [1]
• 更多

学科主题

• 光电子学 [2]
• 半导体材料 [1]
• 材料科学与物理化学 [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 卷号: 478, 页码: 5-10 作者:  Huang, Mingmin;  Yang, Zhimei;  Wang, Shaomin;  Liu, Jiyuan;  Gong, Min   |  收藏  |  浏览/下载：47/0  |  提交时间：2021/12/15 Schottky barrier diodes  Raman spectroscopy  Recrystallization effect  Swift heavy ion  SiC   Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文  OAI收割 Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56 作者:  Li J(李健);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)   |  收藏  |  浏览/下载：24/0  |  提交时间：2017/12/18 Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States   Graphene-GaN Schottky diodes 期刊论文  OAI收割 NANO RESEARCH, 2015, 卷号: 8, 期号: 4, 页码: 1327-1338 作者:  Kim Seongjun;  Seo Tae Hoon;  Kim Myung Jong;  Song Keun Man;  Suh EunKyung   |  收藏  |  浏览/下载：9/0  |  提交时间：2021/12/13 LIGHT-EMITTING-DIODES  N-TYPE GAN  THERMIONIC-FIELD-EMISSION  SENSITIZED SOLAR-CELLS  CONTACT RESISTANCE  BARRIER HEIGHT  ELECTRICAL CHARACTERISTICS  TRANSPARENT ELECTRODES  RAMAN-SPECTROSCOPY  METAL CONTACTS  graphene  GaN  Schottky diode  Schottky barrier height  Fermi level pinning   A high precision square law detector in digital microwave radiometer 会议论文  OAI收割 Xi'an, China, May 27, 2011 - May 29, 2011 作者:  Pei, Xin;  Chen, Maozheng;  Yan, Hao;  Li, Jian;  Liu, Xiaohong   |  收藏  |  浏览/下载：30/0  |  提交时间：2019/11/13 Microwaves  Communication  Detectors  Microwave devices  Microwave measurement  Radio astronomy  Radiometers  Radiometry  Schottky barrier diodes   Zero bias Schottky diodes use in high performance detection circuits 会议论文  OAI收割 Dalian, China, July 29, 2011 - July 31, 2011 作者:  Fan, Xiaoxi;  Pei, Xin;  Xiong, Xinrong   |  收藏  |  浏览/下载：12/0  |  提交时间：2021/07/02 Diodes  DC power transmission  Detectors  MATLAB  Microwave measurement  Optoelectronic devices  Schottky barrier diodes   Schottky barrier light emitting diode in standard CMOS technology 期刊论文  OAI收割 group iv photonics (gfp), 2011 8th ieee international conference on, 2011, 页码: 296-298 Huang, Beiju; Wang, Wei; Dong, Zan; Zhang, Zanyun; Guo, Weilian; Chen, Hongda 收藏  |  浏览/下载：30/0  |  提交时间：2012/06/13 CMOS integrated circuits  Diodes  Light  Light emission  Photonics  Schottky barrier diodes  Semiconducting silicon compounds  Semiconductor diodes   Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载：91/2  |  提交时间：2010/05/24 Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  REVERSE-BIAS LEAKAGE  MOLECULAR-BEAM EPITAXY  P-N-JUNCTIONS  POSITRON-ANNIHILATION  DIODES  FILMS   Rectifying effect of heterojunctions between metals and doped conducting polymer nanostructure pellets 期刊论文  OAI收割 CHINESE PHYSICS B, 2008, 卷号: 17, 期号: 7, 页码: 2707 Long, YZ; Yin, ZH; Hui, W; Chen, ZJ; Wan, MX 收藏  |  浏览/下载：28/0  |  提交时间：2013/09/24 TEMPLATE-FREE METHOD  NANOTUBULAR POLYANILINE  ELECTRICAL-CONDUCTIVITY  SCHOTTKY-BARRIER  POROUS SILICON  POLYPYRROLE  POLYACETYLENE  FABRICATION  DIODES   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文  OAI收割 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：106/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes