机构

• 半导体研究所 [12]
• 力学研究所 [1]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [11]
• iSwitch采集 [3]

内容类型

• 期刊论文 [12]
• 会议论文 [2]

发表日期

• 2016 [1]
• 2011 [8]
• 2004 [2]
• 2001 [3]

学科主题

• 半导体物理 [4]
• 半导体材料 [3]
• chemical p... [1]
• data proce... [1]
• light/opti... [1]
• optical va... [1]
• 更多

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Measurement of excited layer thickness in highly photo-excited GaAs 会议论文  OAI收割 international symposium on optical measurement technology and instrumentation, beijing, china, 2016-05-09 作者:  Liang, Lingliang;  Tian, Jinshou;  Wang, Tao;  Wu, Shengli;  Li, Fuli 收藏  |  浏览/下载：40/0  |  提交时间：2017/01/17 Gallium arsenide  Optical data processing  Optical variables measurement  Probes  Semiconducting gallium   Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation 期刊论文  iSwitch采集 Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575 作者:  Zhou, Huiying;  Qu, Shengchun;  Jin, Peng;  Xu, Bo;  Ye, Xiaoling 收藏  |  浏览/下载：50/0  |  提交时间：2019/05/12 Atom force microscopy  Nanostructures  Molecular-beam epitaxy  Nanomaterials  Semiconducting gallium arsenide   Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575 作者:  Xu B;  Jin P;  Ye XL 收藏  |  浏览/下载：75/1  |  提交时间：2011/07/05 Atom force microscopy  Nanostructures  Molecular-beam epitaxy  Nanomaterials  Semiconducting gallium arsenide  QUANTUM-DOTS  ANODIC ALUMINA  ARRAYS  PLACEMENT  INAS   Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 105002 Qiu, Yingping; Wang, Yang; Shao, Yongbo; Zhou, Daibing; Liang, Song; Zhao, Lingjuan; Wang, Wei 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/14 Absorption  Capacitance  Fabrication  Light extinction  Semiconducting indium gallium arsenide  Waveguides   Thermal characteristic of GaAs-based laser diodes 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 11, 页码: 2134-2137 Qiao, Yanbin; Feng, Shiwei; Ma, Xiaoyu; Wang, Xiaowei; Guo, Chunsheng; Deng, Haitao; Zhang, Guangchen 收藏  |  浏览/下载：42/0  |  提交时间：2012/06/14 Degradation  Diodes  Electric properties  Gallium arsenide  Hybrid materials  Optical properties  Semiconducting gallium  Semiconductor diodes  Testing  Thermodynamic properties   Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |  浏览/下载：83/0  |  提交时间：2012/06/14 Atomic force microscopy  Buffer layers  Epitaxial growth  Gallium alloys  Gallium arsenide  Germanium  Growth temperature  High resolution transmission electron microscopy  Molecular beam epitaxy  Molecular beams  Semiconducting gallium  Semiconductor device structures  Semiconductor quantum wells  Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells   2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan   |  收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14 Alignment  Atomic force microscopy  Atomic spectroscopy  Detectors  Epitaxial growth  Gallium alloys  Gallium arsenide  Indium arsenide  Infrared detectors  Molecular beam epitaxy  Molecular beams  Optoelectronic devices  Semiconducting gallium  Superlattices  Transmission electron microscopy  X ray diffraction  Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction   Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 optoelectronics letters, Optoelectronics Letters, 2011, 2011, 卷号: 7, 7, 期号: 5, 页码: 325-329, 325-329 作者:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng   |  收藏  |  浏览/下载：27/0  |  提交时间：2012/06/14 Epitaxial growth  Gallium arsenide  Growth(materials)  Molecular beam epitaxy  Semiconducting gallium  Semiconducting indium  Semiconductor quantum wells  Epitaxial Growth  Gallium Arsenide  Growth(Materials)  Molecular Beam Epitaxy  Semiconducting Gallium  Semiconducting Indium  Semiconductor Quantum Wells   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |  浏览/下载：36/0  |  提交时间：2012/06/14 Buffer layers  Epitaxial growth  Gallium alloys  Indium antimonides  Molecular beam epitaxy  Molecular beams  Optical waveguides  Optimization  Semiconducting gallium arsenide  Semiconductor quantum wells  Tellurium  Tellurium compounds  Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds   Mn implanted gaas by low energy ion beam deposition 期刊论文  iSwitch采集 Journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 31-35 作者:  Song, SL;  Chen, NF;  Zhou, JP;  Yin, ZG;  Li, YL 收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12 X-ray diffraction  Ion beam deposit  Magnetic materials  Semiconducting gallium arsenide