机构

• 半导体研究所 [12]
• 金属研究所 [3]
• 软件研究所 [1]

采集方式

• OAI收割 [11]
• iSwitch采集 [5]

内容类型

• 期刊论文 [14]
• 会议论文 [2]

发表日期

• 2011 [4]
• 2009 [1]
• 2005 [3]
• 2004 [1]
• 2001 [7]

学科主题

• 光电子学 [3]
• 半导体材料 [3]
• 半导体物理 [1]

筛选

浏览/检索结果: 共16条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As 期刊论文  OAI收割 ieee international conference on group iv photonics gfp, 2011, 页码: 314-316 Hu, Weixuan; Cheng, Buwen; Xue, Chunlai; Su, Shaojian; Liu, Zhi; Li, Yaming; Wang, Qiming 收藏  |  浏览/下载：59/0  |  提交时间：2012/06/13 Epitaxial growth  Germanium  Indium  Photonics  Semiconducting silicon compounds  Silicon   Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique 期刊论文  OAI收割 guangdianzi jiguang/journal of optoelectronics laser, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033 Zhou, Zhi-Wen; He, Jing-Kai; Li, Cheng; Yu, Jin-Zhong 收藏  |  浏览/下载：53/0  |  提交时间：2012/06/13 Atomic force microscopy  Atomic spectroscopy  Chemical vapor deposition  Diffraction  Epitaxial growth  Germanium  Raman spectroscopy  Semiconducting silicon compounds  Substrates  Surface morphology  Ultrahigh vacuum  X ray diffraction   Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |  浏览/下载：83/0  |  提交时间：2012/06/14 Atomic force microscopy  Buffer layers  Epitaxial growth  Gallium alloys  Gallium arsenide  Germanium  Growth temperature  High resolution transmission electron microscopy  Molecular beam epitaxy  Molecular beams  Semiconducting gallium  Semiconductor device structures  Semiconductor quantum wells  Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells   Photon detection and emission of epitaxial Ge on Si with potential applications in microwave photonic filters 期刊论文  OAI收割 2011 ieee international topical meeting on microwave photonics- jointly held with the2011 asia-pacific microwave photonics conference, mwp/apmp2011, 2011 IEEE International Topical Meeting on Microwave Photonics- Jointly Held with the2011 Asia-Pacific Microwave Photonics Conference, MWP/APMP2011, 2011, 2011, 页码: 101-104, 101-104 作者:  Ding, L.;  Lim, Andy Eu-Jin;  Fang, Qing;  Liow, Tsung-Yang;  Yu, M.B.   |  收藏  |  浏览/下载：136/0  |  提交时间：2012/06/14 Detectors  Electroluminescence  Epitaxial growth  Germanium  Light  Light emission  Light sources  Microwave filters  Microwaves  Monolithic integrated circuits  Optical frequency conversion  Photodetectors  Photoluminescence  Photonics  Photons  Semiconducting silicon compounds  Silicon  Detectors  Electroluminescence  Epitaxial Growth  Germanium  Light  Light Emission  Light Sources  Microwave Filters  Microwaves  Monolithic Integrated Circuits  Optical Frequency Conversion  Photodetectors  Photoluminescence  Photonics  Photons  Semiconducting Silicon Compounds  Silicon   maximum margin transfer learning 会议论文  OAI收割 World Summit on Genetic and Evolutionary Computation (GEC 09), Shanghai, PEOPLES R CHINA, JUN 12-14, Su Bai; Shen Yi-Dong   |  收藏  |  浏览/下载：17/0  |  提交时间：2011/03/20 Labels  Semiconducting germanium compounds   Growth of ge quantum dot mediated by boron on ge wetting layer 期刊论文  iSwitch采集 Journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 329-334 作者:  Shi, WH;  Li, CB;  Luo, LP;  Cheng, BW;  Wang, QM 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Nanostructures  Nucleation  Chemical vapour deposition process  Semiconducting germanium  Semiconducting silicon   In situ doping control for growth of n-p-n si/sige/si heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 2005, 卷号: 273, 期号: 3-4, 页码: 381-385 作者:  Gao, F;  Huang, DD;  Li, JP;  Liu, C 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Doping  Molecular beam epitaxy  Germanium silicon alloys  Semiconducting germanium  Semiconducting silicon  Bipolar transistors   In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 381-385 作者:  Gao, F;  Huang, DD;  Li, JP;  Liu, C   |  收藏  |  浏览/下载：19/0  |  提交时间：2021/02/02 doping  molecular beam epitaxy  germanium silicon alloys  semiconducting germanium  semiconducting silicon  bipolar transistors   Investigation of mn-implanted n-type ge 期刊论文  iSwitch采集 Journal of crystal growth, 2004, 卷号: 265, 期号: 3-4, 页码: 466-470 作者:  Liu, LF;  Chen, NF;  Yin, ZG;  Yang, F;  Zhou, JP 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12 Auger electron spectroscopy  X-ray diffraction  Ion implantation  Semiconducting germanium   Changing the size and shape of ge island by chemical etching 期刊论文  iSwitch采集 Journal of crystal growth, 2001, 卷号: 231, 期号: 1-2, 页码: 17-21 作者:  Gao, F;  Huang, CJ;  Huang, DD;  Li, JP;  Sun, DZ 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Atomic force microscopy  Etching  Nanostructures  Molecular beam epitaxy  Semiconducting germanium  Semiconducting silicon