机构

• 半导体研究所 [12]
• 上海应用物理研究所 [2]

采集方式

• OAI收割 [8]
• iSwitch采集 [6]

内容类型

• 期刊论文 [14]

发表日期

• 2018 [2]
• 2011 [3]
• 2010 [3]
• 2009 [2]
• 2000 [2]
• 1999 [2]
• 更多

学科主题

• 半导体物理 [3]
• 光电子学 [2]
• 半导体材料 [1]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Fabricating Quasi-Free-Standing Graphene on a SiC(0001) Surface by Steerable Intercalation of Iron 期刊论文  OAI收割 JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 卷号: 122, 期号: 37, 页码: 21484-21492 作者:  Shen, KC;  Sun, HL;  Hu, JP;  Hu, HB;  Liang, ZF   |  收藏  |   Spatial hole burning degradation of algaas/gaas laser diodes 期刊论文  iSwitch采集 Applied physics letters, 2011, 卷号: 99, 期号: 10, 页码: 3 作者:  Qiao, Y. B.;  Feng, S. W.;  Xiong, C.;  Wang, X. W.;  Ma, X. Y. 收藏  |   Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |   Strong circular photogalvanic effect in zno epitaxial films 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: 3 作者:  Zhang, Q.;  Wang, X. Q.;  Yin, C. M.;  Xu, F. J.;  Tang, N. 收藏  |   Hydride vapor phase epitaxy growth of semipolar, 10(1)over-bar(3)over-bargan on patterned m-plane sapphire 期刊论文  iSwitch采集 Journal of the electrochemical society, 2010, 卷号: 157, 期号: 7, 页码: H721-h726 作者:  Wei, T. B.;  Hu, Q.;  Duan, R. F.;  Wei, X. C.;  Yang, J. K. 收藏  |   Strong circular photogalvanic effect in ZnO epitaxial films 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: art. no. 041907 Zhang Q (Zhang Q.); Wang XQ (Wang X. Q.); Yin CM (Yin C. M.); Xu FJ (Xu F. J.); Tang N (Tang N.); Shen B (Shen B.); Chen YH (Chen Y. H.); Chang K (Chang K.); Ge WK (Ge W. K.); Ishitani Y (Ishitani Y.); Yoshikawa A (Yoshikawa A.) 收藏  |   Room temperature photoluminescence of tensile-strained ge/si0.13ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文  iSwitch采集 Applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: 3 作者:  Chen, Yanghua;  Li, Cheng;  Zhou, Zhiwen;  Lai, Hongkai;  Chen, Songyan 收藏  |   Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902 Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD 收藏  |