机构

• 金属研究所 [7]
• 长春光学精密机械与物... [2]
• 宁波材料技术与工程研... [1]
• 光电技术研究所 [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [10]
• 会议论文 [2]

发表日期

• 2019 [1]
• 2018 [1]
• 2011 [1]
• 2010 [1]
• 2006 [1]
• 2005 [1]
• 更多

学科主题

• 半导体物理 [1]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Manganese-doped zinc oxide hollow balls for chemiresistive sensing of acetone vapors 期刊论文  OAI收割 MICROCHIMICA ACTA, 2019, 卷号: 186, 期号: 1 作者:  Wang, Dongting;  Shang, Wenan;  Zhang, Bingxue;  Jiang, Chunjie;  Qu, Fengdong   |  收藏  |  浏览/下载：46/0  |  提交时间：2019/12/18 MN THIN-FILMS  GAS SENSOR  OPTICAL-PROPERTIES  ZNO  NANOPARTICLES  PERFORMANCE  SPHERES  FERROMAGNETISM  AL   The optical and electrical properties of ZnO:Al thin films deposited at low temperatures by RF magnetron sputtering 期刊论文  OAI收割 CERAMICS INTERNATIONAL, 2018, 卷号: 44, 期号: 4, 页码: 4154-4157 作者:  Tang, Ping;  Li, Bing;  Feng, Lianghuan   |  收藏  |  浏览/下载：28/0  |  提交时间：2019/08/23 ZnO:Al films  Magnetron sputtering  Low substrate temperatures   Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文  OAI收割 作者:  Chen X.;  Liu L.;  Liu L.;  Li B.;  Li B. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.   Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition 期刊论文  OAI收割 vacuum, VACUUM, 2010, 2010, 卷号: 84, 84, 期号: 11, 页码: 1280-1286, 1280-1286 作者:  Zhu BL (Zhu B. L.);  Zhao XZ (Zhao X. Z.);  Su FH (Su F. H.);  Li GH (Li G. H.);  Wu XG (Wu X. G.)   |  收藏  |  浏览/下载：98/2  |  提交时间：2010/07/05 ZnO  Zno  Pulsed Laser Deposition (Pld)  Annealing Treatment  Photoluminescence (Pl)  Oxide Thin-films  Substrate-temperature  Oxygen-pressure  Electrical-properties  Pld Technique  Al Films  Emission  Pulsed laser deposition (PLD)  Annealing treatment  Photoluminescence (PL)  OXIDE THIN-FILMS  SUBSTRATE-TEMPERATURE  OXYGEN-PRESSURE  ELECTRICAL-PROPERTIES  PLD TECHNIQUE  AL FILMS  EMISSION   Effects of Al doping concentration on optical parameters of ZnO : Al thin films by sol-gel technique 期刊论文  OAI收割 Physica B-Condensed Matter, 2006, 卷号: 381, 期号: 1-2, 页码: 209-213 S. W. Xue; X. T. Zu; W. G. Zheng; H. X. Deng; X. Xiang 收藏  |  浏览/下载：21/0  |  提交时间：2012/04/14 ZnO thin films  refractive index  Al doping  sol-gel  optical  transmission  chemical-vapor-deposition  pulsed-laser deposition  transparent  substrate  reflection spectrum  constants  layer  temperature   Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：35/0  |  提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.   ZAO: an attractive potential substitute for ITO in flat display panels 期刊论文  OAI收割 Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2001, 卷号: 85, 期号: 2-3, 页码: 212-217 M. Chen; Z. L. Pei; C. Sun; J. Gong; R. F. Huang; L. S. Wen 收藏  |  浏览/下载：25/0  |  提交时间：2012/04/14 transparent conducting films  ZAO  reactive magnetron sputtering  tin oxide-films  sn-doped in2o3  optical-properties  electrical-properties  indium oxide  evaporated indium  thin-films  zno  films  al  rf   Study on ZnO : Al (ZAO) films by DC reaction magnetron sputtering 期刊论文  OAI收割 Progress in Natural Science, 2001, 卷号: 11, 期号: 6, 页码: 439-446 Z. L. Pei; C. Sun; M. H. Tan; D. H. Guan; J. Q. Xiao; R. F. Huang; L. H. Wen 收藏  |  浏览/下载：17/0  |  提交时间：2012/04/14 ZnO : Al films  scattering mechanism  photoelectric properties  oxide thin-films  conduction mechanism  transparent  sensors   Properties of ZnO : Al films on polyester produced by de magnetron reactive sputtering 期刊论文  OAI收割 Materials Letters, 2001, 卷号: 48, 期号: 3-4, 页码: 137-143 M. Chen; Z. L. Pei; X. Wang; C. Sun; L. S. Wen 收藏  |  浏览/下载：13/0  |  提交时间：2012/04/14 Al-doped ZnO (ZAO)  polyester  mechanical  IR reflectance  thin-films  optical-properties  oxide-films  electrical-properties  rf  temperature  orientation  parameters  deposition  substrate   Formation of Al-doped ZnO films by de magnetron reactive sputtering 期刊论文  OAI收割 Materials Letters, 2001, 卷号: 48, 期号: 3-4, 页码: 194-198 M. Chen; Z. L. Pei; C. Sun; L. S. Wen; X. Wang 收藏  |  浏览/下载：17/0  |  提交时间：2012/04/14 Al-doped  ZnO  XPS  Al-enrichment  oxide thin-films  optical-properties  electrical-properties  rf  dc  transparent  deposition