机构

• 半导体研究所 [4]
• 物理研究所 [3]
• 上海微系统与信息技术... [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [8]
• iSwitch采集 [1]

内容类型

• 期刊论文 [9]

发表日期

• 2011 [1]
• 2010 [1]
• 2006 [2]
• 2005 [2]
• 2002 [2]
• 2001 [1]
• 更多

学科主题

• 半导体材料 [2]
• Materials ... [1]
• Physics [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 InGaN/GaN based light-emitting diodes grown on maskless periodically grooved sapphire fabricated by wet chemical etching 期刊论文  OAI收割 JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2011, 卷号: 13, 期号: 9-10, 页码: 1203 Yu, NS; Zhu, XL; Peng, MZ; Xing, ZG; Zhou, JM 收藏  |  浏览/下载：27/0  |  提交时间：2013/09/18 EPITAXIAL LATERAL OVERGROWTH  VAPOR-PHASE EPITAXY  GAN  MICROSCOPY  DEPOSITION  DEFECTS  SINGLE   Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE, 2010, 卷号: 45, 期号: 6, 页码: 1503 Yu, NS; Zhu, XL; Peng, MZ; Zhou, JM 收藏  |  浏览/下载：15/0  |  提交时间：2013/09/23 VAPOR-PHASE EPITAXY  LATERAL OVERGROWTH  THIN-FILMS  ALPHA-GAN  MICROSCOPY   Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates fabricated by wet chemical etching 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 8, 页码: 2243 Yu, NS; Guo, LW; Chen, H; Xing, ZG; Wang, J; Zhu, XL; Peng, MZ; Yan, JF; Jia, HQ; Zhou, JM 收藏  |  浏览/下载：24/0  |  提交时间：2013/09/18 EPITAXIAL LATERAL OVERGROWTH  MOLECULAR-BEAM EPITAXY  GAN FILMS  VAPOR-DEPOSITION  PHOTOLUMINESCENCE  DEFECTS  SI(111)  SINGLE  LAYERS   Growth of high-quality thick GaN using a tungsten interlayer 期刊论文  OAI收割 RARE METALS, 2006, 卷号: 25, 页码: 11-14 Wang, XZ; Yu, GH; Lei, BL; Lin, CT; Wang, XL; Qi, M; Li, AZ; Nouet, G; Ruterana, P; Chen, J 收藏  |  浏览/下载：23/0  |  提交时间：2012/03/24 VAPOR-PHASE EPITAXY  PENDEO-EPITAXY  LATERAL GROWTH  FILMS  SAPPHIRE  LAYERS  OVERGROWTH   Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation 期刊论文  OAI收割 HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2005, 卷号: 29, 页码: #REF! 作者:  Chen, J;  Wang, JF;  Zhang, JC;  Wang, H;  Huang, Y 收藏  |  浏览/下载：19/0  |  提交时间：2016/04/11 GaN  metalorganic chemical vapor deposition (MOCVD)  epitaxy lateral overgrowth  stacking faults  synchrotron radiation X-ray diffraction (XRD)  pole figure   Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation 期刊论文  OAI收割 high energy physics and nuclear physics-chinese edition, 2005, 卷号: 29, 期号: suppl.s, 页码: 37-39 Chen J; Wang JF; Zhang JC; Wang H; Huang Y; Wang YT; Yang H; Jia QJ 收藏  |  浏览/下载：56/0  |  提交时间：2010/04/11 GaN  metalorganic chemical vapor deposition (MOCVD)  epitaxy lateral overgrowth  stacking faults  synchrotron radiation X-ray diffraction (XRD)  pole figure  WURTZITE GAN  LUMINESCENCE   Structural characterization of epitaxial lateral overgrown gan on patterned gan/gaas(001) substrates 期刊论文  iSwitch采集 Journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72 作者:  Shen, XM;  Fu, Y;  Feng, G;  Zhang, BS;  Feng, ZH 收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12 Transmission electron microscopy  X-ray diffraction  Epitaxial lateral overgrowth  Metalorganic vapor phase epitaxy  Cubic gallium nitride   Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72 Shen XM; Fu Y; Feng G; Zhang BS; Feng ZH; Wang YT; Yang H 收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12 transmission electron microscopy  X-ray diffraction  epitaxial lateral overgrowth  metalorganic vapor phase epitaxy  cubic gallium nitride  CHEMICAL-VAPOR-DEPOSITION  CUBIC GAN  PHASE EPITAXY  REDUCTION  GROWTH   Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 225, 期号: 1, 页码: 45-49 作者:  Zhao DG 收藏  |  浏览/下载：144/40  |  提交时间：2010/08/12 photoluminescence  SEM  epitaxial lateral overgrowth  metalorganic chemical vapor deposition  cubic GaN  PHASE EPITAXY  SELECTIVE GROWTH  LASER-DIODES  LAYERS