机构

• 半导体研究所 [13]
• 物理研究所 [8]
• 上海微系统与信息技术... [2]
• 高能物理研究所 [1]

采集方式

• OAI收割 [20]
• iSwitch采集 [4]

内容类型

• 期刊论文 [24]

发表日期

• 2011 [4]
• 2010 [1]
• 2009 [1]
• 2008 [3]
• 2006 [2]
• 2005 [3]
• 更多

学科主题

• 半导体材料 [6]
• 半导体物理 [2]
• Chemistry,... [1]
• Materials ... [1]
• Physics [1]
• 光电子学 [1]
• 更多

筛选

浏览/检索结果: 共24条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 InGaN/GaN based light-emitting diodes grown on maskless periodically grooved sapphire fabricated by wet chemical etching 期刊论文  OAI收割 JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2011, 卷号: 13, 期号: 9-10, 页码: 1203 Yu, NS; Zhu, XL; Peng, MZ; Xing, ZG; Zhou, JM 收藏  |  浏览/下载：30/0  |  提交时间：2013/09/18 EPITAXIAL LATERAL OVERGROWTH  VAPOR-PHASE EPITAXY  GAN  MICROSCOPY  DEPOSITION  DEFECTS  SINGLE   Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate 期刊论文  OAI收割 ENERGY & ENVIRONMENTAL SCIENCE, 2011, 卷号: 4, 期号: 8, 页码: 2625 Jiang, Y; Jia, HQ; Wang, WX; Wang, L; Chen, H 收藏  |  浏览/下载：22/0  |  提交时间：2013/09/24 LATERAL EPITAXIAL OVERGROWTH  VAPOR-DEPOSITION  DENSITY GAN  WING-TILT  FILMS  DEVICES   The impact of nanoporous SiN (x) interlayer growth position on high-quality GaN epitaxial films 期刊论文  OAI收割 CHINESE SCIENCE BULLETIN, 2011, 卷号: 56, 期号: 25, 页码: 2739 Ma, ZG; Xing, ZG; Wang, XL; Chen, Y; Xu, PQ; Cui, YX; Wang, L; Jiang, Y; Jia, HQ; Chen, H 收藏  |  浏览/下载：34/0  |  提交时间：2013/09/23 LIGHT-EMITTING-DIODES  LATERAL OVERGROWTH  BUFFER LAYERS  REDUCTION  DISLOCATIONS  DIFFRACTION  SAPPHIRE   A practical route towards fabricating GaN nanowire arrays 期刊论文  OAI收割 crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935 Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H 收藏  |  浏览/下载：36/0  |  提交时间：2012/02/06 LIGHT-EMITTING-DIODES  EPITAXIAL LATERAL OVERGROWTH  CHEMICAL-VAPOR-DEPOSITION  WELL NANOROD ARRAYS  ULTRAVIOLET-LIGHT  GROWTH  NANOGENERATORS  DISLOCATIONS  BRIGHTNESS  LAYERS   Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE, 2010, 卷号: 45, 期号: 6, 页码: 1503 Yu, NS; Zhu, XL; Peng, MZ; Zhou, JM 收藏  |  浏览/下载：16/0  |  提交时间：2013/09/23 VAPOR-PHASE EPITAXY  LATERAL OVERGROWTH  THIN-FILMS  ALPHA-GAN  MICROSCOPY   EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR 期刊论文  OAI收割 modern physics letters b, 2009, 卷号: 23, 期号: 15, 页码: 1881-1887 Zhang B; Chen J; Wang X; Wu AM; Luo JX; Wang X; Zhang MA; Wu YX; Zhu JJ; Yang H 收藏  |  浏览/下载：83/0  |  提交时间：2010/03/08 GaN  epitaxial lateral overgrowth   Catalyst-Free Growth of Well Vertically Aligned GaN Needlelike Nanowire Array with Low-Field Electron Emission Properties 期刊论文  OAI收割 JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 卷号: 112, 期号: 48, 页码: 18821-18824 Lin, CT; Yu, GH; Wang, XZ; Cao, MX; Lu, HF; Gong, H; Qi, M; Li, AZ 收藏  |  浏览/下载：23/0  |  提交时间：2012/03/24 EPITAXIAL LATERAL OVERGROWTH  NANOROD ARRAYS   Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates 期刊论文  OAI收割 physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 7, 页码: 1719-1723 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH 收藏  |  浏览/下载：96/1  |  提交时间：2010/03/08 LIGHT-EMITTING-DIODES  EPITAXIAL LATERAL OVERGROWTH  IMPROVEMENT  NITRIDE  WET   Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs 期刊论文  OAI收割 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 11, 页码: art. no. 115106 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH 收藏  |  浏览/下载：72/1  |  提交时间：2010/03/08 LIGHT-EMITTING-DIODES  EPITAXIAL LATERAL OVERGROWTH  EFFICIENCY   Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates fabricated by wet chemical etching 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 8, 页码: 2243 Yu, NS; Guo, LW; Chen, H; Xing, ZG; Wang, J; Zhu, XL; Peng, MZ; Yan, JF; Jia, HQ; Zhou, JM 收藏  |  浏览/下载：26/0  |  提交时间：2013/09/18 EPITAXIAL LATERAL OVERGROWTH  MOLECULAR-BEAM EPITAXY  GAN FILMS  VAPOR-DEPOSITION  PHOTOLUMINESCENCE  DEFECTS  SI(111)  SINGLE  LAYERS