机构

• 半导体研究所 [13]
• 金属研究所 [3]
• 数学与系统科学研究院 [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [14]
• iSwitch采集 [4]

内容类型

• 期刊论文 [18]

发表日期

• 2021 [1]
• 2011 [6]
• 2010 [3]
• 2009 [2]
• 2008 [2]
• 2007 [1]
• 更多

学科主题

• 半导体物理 [6]
• 光电子学 [2]
• Physics [1]
• 半导体化学 [1]

筛选

浏览/检索结果: 共18条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Analysis of the second-order BDF scheme with variable steps for the molecular beam epitaxial model without slope selection 期刊论文  OAI收割 SCIENCE CHINA-MATHEMATICS, 2021, 页码: 16 作者:  Liao, Hong-Lin   |  收藏  |  浏览/下载：29/0  |  提交时间：2021/04/26 molecular beam epitaxial growth  variable-step BDF2 scheme  discrete orthogonal convolution kernels  energy stability  convergence analysis   Epitaxial growth of ge0.975sn0.025 alloy films on si(001) substrates by molecular beam epitaxy 期刊论文  iSwitch采集 Acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: 5 作者:  Su Shao-Jian;  Wang Wei;  Zhang Guang-Ze;  Hu Wei-Xuan;  Bai An-Qi 收藏  |  浏览/下载：88/0  |  提交时间：2019/05/12 Gesn  Ge  Molecular beam epitaxy  Epitaxial growth   Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy 期刊论文  OAI收割 acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.28101 Su SJ; Wang W; Zhang GZ; Hu WX; Bai AQ; Xue CL; Zuo YH; Cheng BW; Wang QM 收藏  |  浏览/下载：64/3  |  提交时间：2011/07/05 GeSn  Ge  molecular beam epitaxy  epitaxial growth  SEMICONDUCTORS  GE(001)2X1   Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |  浏览/下载：82/0  |  提交时间：2012/06/14 Atomic force microscopy  Buffer layers  Epitaxial growth  Gallium alloys  Gallium arsenide  Germanium  Growth temperature  High resolution transmission electron microscopy  Molecular beam epitaxy  Molecular beams  Semiconducting gallium  Semiconductor device structures  Semiconductor quantum wells  Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells   2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan   |  收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14 Alignment  Atomic force microscopy  Atomic spectroscopy  Detectors  Epitaxial growth  Gallium alloys  Gallium arsenide  Indium arsenide  Infrared detectors  Molecular beam epitaxy  Molecular beams  Optoelectronic devices  Semiconducting gallium  Superlattices  Transmission electron microscopy  X ray diffraction  Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction   Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 optoelectronics letters, Optoelectronics Letters, 2011, 2011, 卷号: 7, 7, 期号: 5, 页码: 325-329, 325-329 作者:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng   |  收藏  |  浏览/下载：26/0  |  提交时间：2012/06/14 Epitaxial growth  Gallium arsenide  Growth(materials)  Molecular beam epitaxy  Semiconducting gallium  Semiconducting indium  Semiconductor quantum wells  Epitaxial Growth  Gallium Arsenide  Growth(Materials)  Molecular Beam Epitaxy  Semiconducting Gallium  Semiconducting Indium  Semiconductor Quantum Wells   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |  浏览/下载：33/0  |  提交时间：2012/06/14 Buffer layers  Epitaxial growth  Gallium alloys  Indium antimonides  Molecular beam epitaxy  Molecular beams  Optical waveguides  Optimization  Semiconducting gallium arsenide  Semiconductor quantum wells  Tellurium  Tellurium compounds  Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds   Magnetic anisotropies of laterally confined structures of epitaxial fe films on gaas (001) 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 7, 页码: 3 作者:  Meng, K. K.;  Lu, J.;  Wang, S. L.;  Meng, H. J.;  Zhao, J. H. 收藏  |  浏览/下载：37/0  |  提交时间：2019/05/12 Gallium arsenide  Iron  Magnetic anisotropy  Magnetic epitaxial layers  Molecular beam epitaxial growth   Co doping enhanced giant magnetocaloric effect in mn1-xcoxas films epitaxied on gaas (001) 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: 3 作者:  Xu, P. F.;  Nie, S. H.;  Meng, K. K.;  Wang, S. L.;  Chen, L. 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Cobalt compounds  Doping  Entropy  Gallium arsenide  Magnetic epitaxial layers  Magnetocaloric effects  Manganese compounds  Molecular beam epitaxial growth   Co doping enhanced giant magnetocaloric effect in Mn1-xCoxAs films epitaxied on GaAs (001) 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2010, 2010, 卷号: 97, 97, 期号: 4, 页码: art. no. 042502, Art. No. 042502 作者:  Xu PF (Xu P. F.);  Nie SH (Nie S. H.);  Meng KK (Meng K. K.);  Wang SL (Wang S. L.);  Chen L (Chen L.)   |  收藏  |  浏览/下载：98/4  |  提交时间：2010/09/07 cobalt compounds  Cobalt Compounds  Doping  Entropy  Gallium Arsenide  Magnetic Epitaxial Layers  Magnetocaloric Effects  Manganese Compounds  Molecular Beam Epitaxial Growth  doping  entropy  gallium arsenide  magnetic epitaxial layers  magnetocaloric effects  manganese compounds  molecular beam epitaxial growth