机构

• 半导体研究所 [12]
• 上海应用物理研究所 [2]

采集方式

• OAI收割 [8]
• iSwitch采集 [6]

内容类型

• 期刊论文 [14]

发表日期

• 2018 [2]
• 2011 [3]
• 2010 [3]
• 2009 [2]
• 2000 [2]
• 1999 [2]
• 更多

学科主题

• 半导体物理 [3]
• 光电子学 [2]
• 半导体材料 [1]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Fabricating Quasi-Free-Standing Graphene on a SiC(0001) Surface by Steerable Intercalation of Iron 期刊论文  OAI收割 JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 卷号: 122, 期号: 37, 页码: 21484-21492 作者:  Shen, KC;  Sun, HL;  Hu, JP;  Hu, HB;  Liang, ZF   |  收藏  |  浏览/下载：18/0  |  提交时间：2019/12/17 EPITAXIAL-GRAPHENE  ELECTRONIC-PROPERTIES  SILICON-CARBIDE  HIGH-QUALITY  GROWTH  SEMICONDUCTOR  TRANSISTORS  GRAPHITE  SINGLE  LAYERS   Spatial hole burning degradation of algaas/gaas laser diodes 期刊论文  iSwitch采集 Applied physics letters, 2011, 卷号: 99, 期号: 10, 页码: 3 作者:  Qiao, Y. B.;  Feng, S. W.;  Xiong, C.;  Wang, X. W.;  Ma, X. Y. 收藏  |  浏览/下载：38/0  |  提交时间：2019/05/12 Aluminium compounds  Carrier density  Cathodoluminescence  Gallium arsenide  Iii-v semiconductors  Optical hole burning  Optical microscopy  Quantum well lasers  Semiconductor epitaxial layers  X-ray diffraction   Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |  浏览/下载：83/0  |  提交时间：2012/06/14 Atomic force microscopy  Buffer layers  Epitaxial growth  Gallium alloys  Gallium arsenide  Germanium  Growth temperature  High resolution transmission electron microscopy  Molecular beam epitaxy  Molecular beams  Semiconducting gallium  Semiconductor device structures  Semiconductor quantum wells  Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |  浏览/下载：34/0  |  提交时间：2012/06/14 Buffer layers  Epitaxial growth  Gallium alloys  Indium antimonides  Molecular beam epitaxy  Molecular beams  Optical waveguides  Optimization  Semiconducting gallium arsenide  Semiconductor quantum wells  Tellurium  Tellurium compounds  Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds   Strong circular photogalvanic effect in zno epitaxial films 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: 3 作者:  Zhang, Q.;  Wang, X. Q.;  Yin, C. M.;  Xu, F. J.;  Tang, N. 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Ii-vi semiconductors  Photoconductivity  Photovoltaic effects  Semiconductor epitaxial layers  Spin-orbit interactions  Valence bands  Wide band gap semiconductors  Zinc compounds   Hydride vapor phase epitaxy growth of semipolar, 10(1)over-bar(3)over-bargan on patterned m-plane sapphire 期刊论文  iSwitch采集 Journal of the electrochemical society, 2010, 卷号: 157, 期号: 7, 页码: H721-h726 作者:  Wei, T. B.;  Hu, Q.;  Duan, R. F.;  Wei, X. C.;  Yang, J. K. 收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12 Atomic force microscopy  Crystal orientation  Etching  Gallium compounds  Iii-v semiconductors  Photoluminescence  Red shift  Scanning electron microscopy  Semiconductor epitaxial layers  Semiconductor thin films  Vapour phase epitaxial growth  X-ray diffraction   Strong circular photogalvanic effect in ZnO epitaxial films 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: art. no. 041907 Zhang Q (Zhang Q.); Wang XQ (Wang X. Q.); Yin CM (Yin C. M.); Xu FJ (Xu F. J.); Tang N (Tang N.); Shen B (Shen B.); Chen YH (Chen Y. H.); Chang K (Chang K.); Ge WK (Ge W. K.); Ishitani Y (Ishitani Y.); Yoshikawa A (Yoshikawa A.) 收藏  |  浏览/下载：285/88  |  提交时间：2010/09/07 II-VI semiconductors  photoconductivity  photovoltaic effects  semiconductor epitaxial layers  spin-orbit interactions  valence bands  wide band gap semiconductors  zinc compounds   Room temperature photoluminescence of tensile-strained ge/si0.13ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文  iSwitch采集 Applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: 3 作者:  Chen, Yanghua;  Li, Cheng;  Zhou, Zhiwen;  Lai, Hongkai;  Chen, Songyan 收藏  |  浏览/下载：63/0  |  提交时间：2019/05/12 Chemical vapour deposition  Elemental semiconductors  Energy gap  Germanium  Ge-si alloys  Photoluminescence  Semiconductor epitaxial layers  Semiconductor quantum wells  Silicon  Tensile strength   Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902 Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD 收藏  |  浏览/下载：100/14  |  提交时间：2010/03/08 chemical vapour deposition  elemental semiconductors  energy gap  germanium  Ge-Si alloys  photoluminescence  semiconductor epitaxial layers  semiconductor quantum wells  silicon  tensile strength