机构

• 半导体研究所 [27]
• 新疆理化技术研究所 [3]
• 上海微系统与信息技术... [3]
• 近代物理研究所 [1]

采集方式

• OAI收割 [20]
• iSwitch采集 [14]

内容类型

• 期刊论文 [33]
• 会议论文 [1]

发表日期

• 2021 [2]
• 2019 [1]
• 2018 [1]
• 2012 [3]
• 2010 [6]
• 2009 [4]
• 更多

学科主题

• 光电子学 [10]
• Engineerin... [2]
• 微电子学 [2]
• Engineerin... [1]
• 半导体化学 [1]

筛选

浏览/检索结果: 共34条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429 作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1   |  收藏  |  浏览/下载：39/0  |  提交时间：2021/08/06 Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability   Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523 作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1   |  收藏  |  浏览/下载：39/0  |  提交时间：2021/12/06 Threshold voltage  TestingMOSFET circuits  Transistors  Standards  Logic gates  Fluctuations  Buried oxide (BOX)  silicon-on-insulator (SOI)  total ionizing dose (TID)   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]   |  收藏  |  浏览/下载：115/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 页码: 1091-1100 作者:  Gu, Song;  Liu, Jie;  Bi, Jinshun;  Zhao, Fazhan;  Zhang, Zhangang   |  收藏  |  浏览/下载：36/0  |  提交时间：2018/07/16 Energy dependence  heavy ions  nuclear reactions  silicon-on-insulator (SOI) technology  single event upset (SEU)   Poly-Silicon Grating Couplers for Efficient Coupling With Optical Fibers 期刊论文  OAI收割 IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 卷号: 24, 期号: 18, 页码: 1614-1617 Qiu, C; Sheng, Z; Li, L; Pang, A; Wang, ZQ; Wu, AM; Wang, X; Zou, SC; Gan, FW 收藏  |  浏览/下载：19/0  |  提交时间：2013/04/17 Complementary metal-oxide-semiconductor (CMOS) technology  silicon-on-insulator (SOI) waveguide  silicon photonics  waveguide grating coupler   A Tunnel Diode Body Contact Structure for High-Performance SOI MOSFETs 期刊论文  OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 卷号: 59, 期号: 1, 页码: 101-107 Luo, JX; Chen, J; Wu, QQ; Chai, Z; Zhou, JH; Yu, T; Dong, YJ; Li, L; Liu, W; Qiu, C; Wang, X 收藏  |  浏览/下载：14/0  |  提交时间：2013/04/17 Body contact  floating-body effects (FBEs)  kink effect  linear kink effect (LKE)  partially depleted (PD) silicon-on-insulator (SOI)  SOI MOSFETs  tunnel diode  tunnel diode body contact (TDBC)   Temperature Dependence of Hysteresis Effect in Partially Depleted Silicon-on-Insulator MOSFETs 期刊论文  OAI收割 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2012, 卷号: 12, 期号: 1, 页码: 63-67 Luo, JX; Chen, J; Zhou, JH; Wu, QQ; Chai, Z; Wang, X 收藏  |  浏览/下载：16/0  |  提交时间：2013/04/17 Hysteresis  MOSFET  partially depleted (PD) silicon-on-insulator (SOI)  SOI technology  temperature   Experimental study on the subthreshold swing of silicon nanowire transistors 期刊论文  iSwitch采集 Journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11, 页码: 7113-7116 作者:  Zhang, Yanbo;  Xiong, Ying;  Yang, Xiang;  Wang, Ying;  Han, Weihua 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12 Subthreshold swing (ss)  Silicon-on-insulator (soi)  Nanowire  Wrap gate  Side gates   High-saturation-power and high-speed ge-on-soi p-i-n photodetectors 期刊论文  iSwitch采集 Ieee electron device letters, 2010, 卷号: 31, 期号: 7, 页码: 701-703 作者:  Xue, Hai-Yun;  Xue, Chun-Lai;  Cheng, Bu-Wen;  Yu, Yu-De;  Wang, Qi-Ming 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Germanium  Photodetectors  Saturation power  Silicon-on-insulator (soi) technology  Ultrahigh-vacuum chemical vapor deposition (uhv/cvd)   Fabrication of a low-loss ssc using high-dose electron beam lithography exposure with negative pmma resist 期刊论文  iSwitch采集 Ieee photonics technology letters, 2010, 卷号: 22, 期号: 7, 页码: 501-503 作者:  Liu, Yan;  Xu, Xuejun;  Xing, Bo;  Yu, Yude;  Yu, Jinzhong 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Silicon-on-insulator (soi)  Spot-size converter (ssc)