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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [14]
采集方式
OAI收割 [14]
内容类型
期刊论文 [13]
会议论文 [1]
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2011 [2]
2010 [1]
2009 [1]
2008 [3]
2003 [1]
2002 [2]
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学科主题
半导体物理 [14]
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Native p-type transparent conductive CuI via intrinsic defects
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54907, 54907
作者:
Wang J
;
Li JB
  |  
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2012/01/06
HYBRID ELECTROCHEMICAL/CHEMICAL SYNTHESIS
AUGMENTED-WAVE METHOD
COPPER HALIDES
BAND-STRUCTURE
II-VI
SEMICONDUCTORS
EMISSION
DIAMOND
CUBR
CUCL
Hybrid Electrochemical/chemical Synthesis
Augmented-wave Method
Copper Halides
Band-structure
Ii-vi
Semiconductors
Emission
Diamond
Cubr
Cucl
Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point
期刊论文
OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 10, 页码: 100301, 100301
作者:
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/01/06
charged acceptor centre
screening effect
exchange interaction
SHALLOW ACCEPTOR STATES
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
Charged Acceptor Centre
Screening Effect
Exchange Interaction
Shallow Acceptor States
Gallium-arsenide
Semiconductors
Field
Origins of magnetism in transition metal doped Cul
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 043713, Art. No. 043713
作者:
  |  
收藏
  |  
浏览/下载:86/0
  |  
提交时间:2010/10/11
AUGMENTED-WAVE METHOD
Augmented-wave Method
Optical-properties
Cuprous Halides
Copper Halides
Band-structure
Cubr
Photoemission
Pressure
Density
States
OPTICAL-PROPERTIES
CUPROUS HALIDES
COPPER HALIDES
BAND-STRUCTURE
CUBR
PHOTOEMISSION
PRESSURE
DENSITY
STATES
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101
作者:
Wei HY
;
Jiao CM
;
Song HP
收藏
  |  
浏览/下载:235/41
  |  
提交时间:2010/03/08
aluminium compounds
conduction bands
energy gap
high electron mobility transistors
III-V semiconductors
magnesium compounds
passivation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
First-principles study of p-type transparent conductive oxides CuXO2 (X=Y, Sc, and Al)
期刊论文
OAI收割
journal of applied physics, 2008, 卷号: 104, 期号: 7, 页码: art. no. 073527
Shi, LJ
;
Fang, ZJ
;
Li, JB
收藏
  |  
浏览/下载:65/0
  |  
提交时间:2010/03/08
AUGMENTED-WAVE METHOD
DELAFOSSITE STRUCTURE
ELECTRONIC-STRUCTURE
V SEMICONDUCTORS
THIN-FILMS
II-VI
CUSCO2
CUALO2
ENERGY
CUYO2
Effect on nitrogen acceptor as Mg is alloyed into ZnO
期刊论文
OAI收割
applied physics letters, 2008, 卷号: 92, 期号: 6, 页码: art. no. 062110
Gai, YQ
;
Yao, B
;
Wei, ZP
;
Li, YF
;
Lu, YM
;
Shen, DZ
;
Zhang, JY
;
Zhao, DX
;
Fan, XW
;
Li, JB
;
Xia, JB
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/03/08
P-TYPE ZNO
II-VI
BAND-GAP
SEMICONDUCTORS
FILMS
MGXZN1-XO
EPITAXY
First-principles study of defects in CuGaO2
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 8, 页码: 2997-3000
Fang, ZJ
;
Fang, C
;
Shi, LJ
;
Liu, YH
;
He, MC
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/03/08
PULSED-LASER DEPOSITION
AUGMENTED-WAVE METHOD
ELECTRICAL-CONDUCTION
DELAFOSSITE STRUCTURE
THIN-FILMS
TRANSPARENT
CUALO2
CUINO2
OXIDE
Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers
期刊论文
OAI收割
ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338
作者:
Xu YQ
收藏
  |  
浏览/下载:395/1
  |  
提交时间:2010/08/12
band structure
differential gain
GaInNAs
optical gain
strain compensated
strain mediated
STRAIN
TEMPERATURE
DIODES
ALLOYS
OFFSET
Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
期刊论文
OAI收割
applied physics letters, 2002, 卷号: 80, 期号: 21, 页码: 3934-3936
Ling CC
;
Mui WK
;
Lam CH
;
Beling CD
;
Fung S
;
Lui MK
;
Cheah KW
;
Li KF
;
Zhao YW
;
Gong M
收藏
  |  
浏览/下载:87/9
  |  
提交时间:2010/08/12
ANTIMONIDE
Positron-annihilation study of compensation defects in InP
期刊论文
OAI收割
journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001
Shan YY
;
Deng AH
;
Ling CC
;
Fung S
;
Ling CD
;
Zhao YW
;
Sun TN
;
Sun NF
收藏
  |  
浏览/下载:99/9
  |  
提交时间:2010/08/12
UNDOPED SEMIINSULATING INP
INDIUM-PHOSPHIDE
LIFETIME
VACANCY
MECHANISMS
ACCEPTOR
GROWTH
GAAS