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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [18]
采集方式
OAI收割 [18]
内容类型
期刊论文 [18]
发表日期
2011 [18]
学科主题
半导体物理 [18]
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浏览/检索结果:
共18条,第1-10条
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发表日期:2011
学科主题:半导体物理
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Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:33/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004
作者:
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Atomic Force Microscopy
Buffer Layers
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Germanium
Growth Temperature
High Resolution Transmission Electron Microscopy
Molecular Beam Epitaxy
Molecular Beams
Semiconducting Gallium
Semiconductor Device Structures
Semiconductor Quantum Wells
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
OAI收割
hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406
作者:
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Alignment
Atomic force microscopy
Atomic spectroscopy
Detectors
Epitaxial growth
Gallium alloys
Gallium arsenide
Indium arsenide
Infrared detectors
Molecular beam epitaxy
Molecular beams
Optoelectronic devices
Semiconducting gallium
Superlattices
Transmission electron microscopy
X ray diffraction
Alignment
Atomic Force Microscopy
Atomic Spectroscopy
Detectors
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Indium Arsenide
Infrared Detectors
Molecular Beam Epitaxy
Molecular Beams
Optoelectronic Devices
Semiconducting Gallium
Superlattices
Transmission Electron Microscopy
x Ray Diffraction
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 9, 页码: article no.93507, Article no.93507
作者:
Shen C
;
Wang LG
  |  
收藏
  |  
浏览/下载:43/5
  |  
提交时间:2011/07/05
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
Gallium-arsenide
Semiconductors
Field
Dynamics of dense spin ensemble excited in a barrier layer and detected in a well
期刊论文
OAI收割
science china-physics mechanics & astronomy, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 2011, 卷号: 54, 54, 期号: 6, 页码: 1108-1111, 1108-1111
作者:
Shen C
;
Wang LG
;
Zhu H
;
Zheng HZ
;
Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hzzheng@red.semi.ac.cn
  |  
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2011/07/05
spin polarized transport
optical orientation
dense spin relaxation
quantum well
TRANSPORT
Spin Polarized Transport
Optical Orientation
Dense Spin Relaxation
Quantum Well
Transport
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
期刊论文
OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102
作者:
He JF
;
Wang HL
;
Shang XJ
;
Li MF
;
Zhu Y
  |  
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2012/01/06
1.3 MU-M
STRAIN RELIEF
LASERS
SUBSTRATE
PHOTOLUMINESCENCE
DISLOCATIONS
OPERATION
RANGE
1.3 Mu-m
Strain Relief
Lasers
Substrate
Photoluminescence
Dislocations
Operation
Range
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54320, 54320
作者:
Ning JQ
;
Xu SJ
;
Ruan XZ
;
Ji Y
;
Zheng HZ
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2012/01/06
WELLS
RELAXATION
HOLE
PHOTOLUMINESCENCE
SEMICONDUCTORS
LOCALIZATION
TRANSITIONS
EXCITONS
CARRIERS
GROWTH
Wells
Relaxation
Hole
Photoluminescence
Semiconductors
Localization
Transitions
Excitons
Carriers
Growth
Determining the sign of g factor via time-resolved Kerr rotation spectroscopy with a rotatable magnetic field
期刊论文
OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 8, 页码: 87503, 87503
作者:
Gu XF
;
Qian X
;
Ji Y
;
Chen L
;
Zhao JH
  |  
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/01/06
ELECTRON G-FACTORS
QUANTUM-WELLS
GAAS
SPINTRONICS
BEATS
Electron G-factors
Quantum-wells
Gaas
Spintronics
Beats
Electron spin relaxation in a single InAs quantum dot measured by tunable nuclear spins
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2011, 2011, 卷号: 84, 84, 期号: 3, 页码: 33302, 33302
作者:
Dou XM
;
Sun BQ
;
Jiang DS
;
Ni HQ
;
Niu ZC
  |  
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2012/01/06
DYNAMICS
EXCITON
Dynamics
Exciton
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
期刊论文
OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 1, 页码: article no.18102, Article no.18102
作者:
He JF
;
Niu ZC
;
Chang XY
;
Ni HQ
;
Zhu Y
  |  
收藏
  |  
浏览/下载:105/7
  |  
提交时间:2011/07/05
molecular beam epitaxy
anti-phase domain
GaAs/Ge interface
CHEMICAL VAPOR-DEPOSITION
JUNCTION SOLAR-CELLS
DOMAIN-FREE GROWTH
TEMPERATURE
QUALITY
FUTURE
Molecular Beam Epitaxy
Anti-phase Domain
Gaas/ge Interface
Chemical Vapor-deposition
Junction Solar-cells
Domain-free Growth
Temperature
Quality
Future