中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2011 [18]
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  • 半导体物理 [18]
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Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文  OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载:33/2  |  提交时间:2011/07/05
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004
作者:  
He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying
  |  收藏  |  浏览/下载:73/0  |  提交时间:2012/06/14
2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割
hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406
作者:  
Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan
  |  收藏  |  浏览/下载:20/0  |  提交时间:2012/06/14
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 9, 页码: article no.93507, Article no.93507
作者:  
Shen C;  Wang LG
  |  收藏  |  浏览/下载:43/5  |  提交时间:2011/07/05
Dynamics of dense spin ensemble excited in a barrier layer and detected in a well 期刊论文  OAI收割
science china-physics mechanics & astronomy, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 2011, 卷号: 54, 54, 期号: 6, 页码: 1108-1111, 1108-1111
作者:  
Shen C;  Wang LG;  Zhu H;  Zheng HZ;  Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hzzheng@red.semi.ac.cn
  |  收藏  |  浏览/下载:62/0  |  提交时间:2011/07/05
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102
作者:  
He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y
  |  收藏  |  浏览/下载:24/0  |  提交时间:2012/01/06
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54320, 54320
作者:  
Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ
  |  收藏  |  浏览/下载:14/0  |  提交时间:2012/01/06
Determining the sign of g factor via time-resolved Kerr rotation spectroscopy with a rotatable magnetic field 期刊论文  OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 8, 页码: 87503, 87503
作者:  
Gu XF;  Qian X;  Ji Y;  Chen L;  Zhao JH
  |  收藏  |  浏览/下载:17/0  |  提交时间:2012/01/06
Electron spin relaxation in a single InAs quantum dot measured by tunable nuclear spins 期刊论文  OAI收割
physical review b, PHYSICAL REVIEW B, 2011, 2011, 卷号: 84, 84, 期号: 3, 页码: 33302, 33302
作者:  
Dou XM;  Sun BQ;  Jiang DS;  Ni HQ;  Niu ZC
  |  收藏  |  浏览/下载:10/0  |  提交时间:2012/01/06
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文  OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 1, 页码: article no.18102, Article no.18102
作者:  
He JF;  Niu ZC;  Chang XY;  Ni HQ;  Zhu Y
  |  收藏  |  浏览/下载:105/7  |  提交时间:2011/07/05