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Chinese Academy of Sciences Institutional Repositories Grid
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半导体研究所 [67]
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Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films
期刊论文
OAI收割
CHINESE PHYSICS B, 2016, 卷号: 25, 期号: 2
作者:
Yang, J
;
Zhao, DG
;
Jiang, DS
;
Chen, P
;
Liu, ZS
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2017/03/11
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
期刊论文
OAI收割
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:
Shi K
;
Jiao CM
收藏
  |  
浏览/下载:93/7
  |  
提交时间:2011/07/05
Valence band offset
GaN/diamond heterojunction
XPS
Conduction band offset
CHEMICAL-VAPOR-DEPOSITION
ALGAN/GAN HEMTS
DIAMOND
GAN
FILMS
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
;
Wei HY
收藏
  |  
浏览/下载:57/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
OAI收割
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
OAI收割
journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145
作者:
Wei TB
;
Yang JK
;
Hu Q
;
Duan RF
;
Huo ZQ
  |  
收藏
  |  
浏览/下载:80/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Cl
Pl
Stacking Fault
Hvpe
Gan
Nonpolar
Chemical-vapor-deposition
Acceptor Pair Emission
Phase Epitaxy
Grown Gan
Semiconductors
Sapphire
Films
Nitride
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun)
;
Zhu JJ (Zhu Jian-Jun)
;
Jiang DS (Jiang De-Sheng)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:109/2
  |  
提交时间:2010/04/22
metalorganic chemical vapor deposition
Al1-xInxN
gradual variation in composition
optical reflectance spectra
X-RAY-DIFFRACTION
PHASE EPITAXY
RELAXATION
FILMS
HETEROSTRUCTURES
SEPARATION
DYNAMICS
ALLOYS
REGION
LAYERS
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang)
;
Zhang S (Zhang Shuang)
;
Liu WB (Liu Wen-Bao)
;
Hao XP (Hao Xiao-Peng)
;
Jiang DS (Jiang De-Sheng)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Wang H (Wang Hui)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
;
Wei L (Wei Long)
收藏
  |  
浏览/下载:73/2
  |  
提交时间:2010/05/24
Ga vacancies
MOCVD
GaN
Schottky barrier photodetector
REVERSE-BIAS LEAKAGE
MOLECULAR-BEAM EPITAXY
P-N-JUNCTIONS
POSITRON-ANNIHILATION
DIODES
FILMS
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
期刊论文
OAI收割
thin solid films, THIN SOLID FILMS, 2010, 2010, 卷号: 519, 519, 期号: 1, 页码: 228-230, 228-230
作者:
Hao RT (Hao Ruiting)
;
Deng SK (Deng Shukang)
;
Shen LX (Shen Lanxian)
;
Yang PZ (Yang Peizhi)
;
Tu JL (Tu Jielei)
  |  
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/12/28
Gallium Arsenide
Gallium Arsenide
Gallium Antimonide
Gallium Antimonide/aluminum Antimonide
Superlattices
Molecular Beam Epitaxy
Vapor-phase Epitaxy
Surface-morphology
Growth
Superlattices
Temperature
Relaxation
Detectors
Gaas(001)
Mocvd
Films
Gallium antimonide
Gallium antimonide/Aluminum antimonide
Superlattices
Molecular Beam Epitaxy
VAPOR-PHASE EPITAXY
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
TEMPERATURE
RELAXATION
DETECTORS
GAAS(001)
MOCVD
FILMS
EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR
期刊论文
OAI收割
MODERN PHYSICS LETTERS B, 2009, 卷号: 23, 期号: 15, 页码: 1881-1887
Zhang, B
;
Chen, J
;
Wang, X
;
Wu, AM
;
Luo, JX
;
Wang, X
;
Zhang, MA
;
Wu, YX
;
Zhu, JJ
;
Yang, H
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2011/11/04
CHEMICAL-VAPOR-DEPOSITION
LIGHT-EMITTING-DIODES
SI(111)
FILMS
REDUCTION
GROWTH
SUBSTRATE
STRESS
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding
期刊论文
OAI收割
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 6, 页码: 64211-64211
Chen, T
;
Hong, T
;
Pan, JQ
;
Chen, WX
;
Cheng, YB
;
Wang, Y
;
Ma, XB
;
Liu, WL
;
Zhao, LJ
;
Ran, GZ
;
Wang, W
;
Qin, GG
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2012/03/24
CHEMICAL VAPOR-DEPOSITION
WAVE-GUIDE CIRCUIT
DOUBLE HETEROSTRUCTURES
SILICON SUBSTRATE
CW OPERATION
WAFER
DEVICES
FILMS