中国科学院机构知识库网格系统: 检索

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	Mechanism and Equivalence of Single Event Effects Induced by 14 MeV Neutrons in High-Speed QDR SRAM 期刊论文 OAI收割 APPLIED SCIENCES-BASEL, 2022, 卷号: 12, 期号: 19, 页码: 9685 作者: Yang, Shaohua; Zhang, Zhangang; Lei, Zhifeng; Tong, Teng; Li, Xiaohui \| 收藏 \| 浏览/下载：4/0 \| 提交时间：2023/11/09 SEE SBU MCU QDR-SRAM
	Impacts of carbon ions on SEU in SOI SRAM 期刊论文 OAI收割 MICROELECTRONICS RELIABILITY, 2021, 卷号: 126, 页码: 6 作者: Gao, J.; Zhang, Q.; Xi, K.; Li, B.; Wang, C. \| 收藏 \| 浏览/下载：28/0 \| 提交时间：2022/01/24 SEE SEU SOI SRAM C
	Measurement and evaluation of the Single Event Effects of high-performance SerDes circuits 期刊论文 OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2021, 卷号: 1012, 页码: 11 作者: Wang, Shu; Cai, Chang; Ning, Bingxu; He, Ze; Huang, Zhiqin \| 收藏 \| 浏览/下载：35/0 \| 提交时间：2021/12/08 SerDes SRAM-based FPGA Single Event Upset Single Event Functional Interrupt
	CIS单粒子效应机理及模拟试验方法学位论文 OAI收割中国科学院新疆理化技术研究所: 中国科学院大学, 2021 作者: 蔡毓龙 \| 收藏 \| 浏览/下载：26/0 \| 提交时间：2021/08/27 CMOS图像传感器单粒子效应空间辐射效应 Geant4
	Heavy ion track straggling effect in single event effect numerical simulation of 3D stacked devices 期刊论文 OAI收割 MICROELECTRONICS RELIABILITY, 2020, 卷号: 114, 页码: 10 作者: Liu, T. Q.; Li, D. Q.; Cai, C.; Zhao, P. X.; Shen, C. \| 收藏 \| 浏览/下载：5/0 \| 提交时间：2021/12/13
	SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA 期刊论文 OAI收割 ELECTRONICS, 2019, 卷号: 8, 期号: 12, 页码: 12 作者: Cai, Chang; Gao, Shuai; Zhao, Peixiong; Yu, Jian; Zhao, Kai \| 收藏 \| 浏览/下载：21/0 \| 提交时间：2022/01/19 field-programmable gate arrays embedded block memory single event fault tolerance radiation effect
	Preliminary single event effect distribution investigation on 28 nm soc using heavy ion microbeam 期刊论文 iSwitch采集 Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2019, 卷号: 450, 页码: 323-326 作者: Yang, Weitao; Du, Xuecheng; Guo, Jinlong; Wei, Junze; Du, Guanghua 收藏 \| 浏览/下载：113/0 \| 提交时间：2019/10/08 Single event effect (see) System on chip (soc) Heavy ion microbeam On-chip-memory (ocm)
	Preliminary single event effect distribution investigation on 28 nm SoC using heavy ion microbeam 期刊论文 OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 450, 页码: 323-326 作者: Yang, Weitao; Du, Xuecheng; Guo, Jinlong; Wei, Junze; Du, Guanghua \| 收藏 \| 浏览/下载：72/0 \| 提交时间：2019/11/10 Single event effect (SEE) System on Chip (SoC) Heavy ion microbeam On-chip-memory (OCM)
	Effects of total ionizing dose on single event effect sensitivity of FRAMs 期刊论文 OAI收割 MICROELECTRONICS RELIABILITY, 2019, 卷号: 95, 页码: 1-7 作者: Ji, Qinggang; Liu, Jie; Li, Dongqing; Liu, Tianqi; Ye, Bing \| 收藏 \| 浏览/下载：54/0 \| 提交时间：2019/11/10 Ferroelectric random access memory Total ionizing dose Single event effect TCAD simulation