机构

• 半导体研究所 [16]

采集方式

• OAI收割 [16]

内容类型

• 期刊论文 [16]

发表日期

• 2011 [16]

学科主题

• 半导体物理 [16]

筛选

浏览/检索结果: 共16条，第1-10条 帮助 限定条件 学科主题：半导体物理    发表日期：2011     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Hole mediated magnetism in Mn-doped GaN nanowires 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 7, 页码: article no.74313, Article no.74313 作者:  Zhang XW;  Li JB;  Chang K;  Li SS;  Xia JB   |  收藏  |  浏览/下载：61/4  |  提交时间：2011/07/05 MOLECULAR-BEAM EPITAXY  ROOM-TEMPERATURE  QUANTUM WIRES  SEMICONDUCTORS  FERROMAGNETISM  FIELD  GAMNN  Molecular-beam Epitaxy  Room-temperature  Quantum Wires  Semiconductors  Ferromagnetism  Field  Gamnn   Magnetic and electronic structure properties of Co-doped SnO2 nanoparticles synthesized by the sol-gel-hydrothermal technique 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 8, 页码: article no.83930, Article no.83930 作者:  Chen WB;  Li JB;  Chen, WB, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. jbli@semi.ac.cn   |  收藏  |  浏览/下载：61/1  |  提交时间：2011/07/05 ROOM-TEMPERATURE FERROMAGNETISM  SEMICONDUCTORS  ENERGY  Room-temperature Ferromagnetism  Semiconductors  Energy   Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |  浏览/下载：73/0  |  提交时间：2012/06/14 Atomic force microscopy  Buffer layers  Epitaxial growth  Gallium alloys  Gallium arsenide  Germanium  Growth temperature  High resolution transmission electron microscopy  Molecular beam epitaxy  Molecular beams  Semiconducting gallium  Semiconductor device structures  Semiconductor quantum wells  Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells   Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy 期刊论文  OAI收割 physica status solidi(c) current topics in solid state physics, Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 2011, 卷号: 8, 8, 期号: 2, 页码: 393-395, 393-395 作者:  Wang, S.L.;  Meng, K.K.;  Chen, L.;  Xu, P.F.;  Meng, H.J.   |  收藏  |  浏览/下载：68/0  |  提交时间：2012/06/14 Drop formation  Epitaxial growth  Ferromagnetic materials  Ferromagnetism  Gallium alloys  High resolution transmission electron microscopy  Magnetic semiconductors  Manganese  Semiconducting silicon  Semiconductor growth  Semiconductor quantum dots  Drop Formation  Epitaxial Growth  Ferromagnetic Materials  Ferromagnetism  Gallium Alloys  High Resolution Transmission Electron Microscopy  Magnetic Semiconductors  Manganese  Semiconducting Silicon  Semiconductor Growth  Semiconductor Quantum Dots   2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan   |  收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Alignment  Atomic force microscopy  Atomic spectroscopy  Detectors  Epitaxial growth  Gallium alloys  Gallium arsenide  Indium arsenide  Infrared detectors  Molecular beam epitaxy  Molecular beams  Optoelectronic devices  Semiconducting gallium  Superlattices  Transmission electron microscopy  X ray diffraction  Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction   Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 9, 页码: article no.93507, Article no.93507 作者:  Shen C;  Wang LG;  Zheng HZ;  Zhu H;  Chen L   |  收藏  |  浏览/下载：42/5  |  提交时间：2011/07/05 GALLIUM-ARSENIDE  SEMICONDUCTORS  FIELD  Gallium-arsenide  Semiconductors  Field   Native p-type transparent conductive CuI via intrinsic defects 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54907, 54907 作者:  Wang J;  Li JB;  Li SS;  Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jbli@semi.ac.cn   |  收藏  |  浏览/下载：35/0  |  提交时间：2012/01/06 HYBRID ELECTROCHEMICAL/CHEMICAL SYNTHESIS  AUGMENTED-WAVE METHOD  COPPER HALIDES  BAND-STRUCTURE  II-VI  SEMICONDUCTORS  EMISSION  DIAMOND  CUBR  CUCL  Hybrid Electrochemical/chemical Synthesis  Augmented-wave Method  Copper Halides  Band-structure  Ii-vi  Semiconductors  Emission  Diamond  Cubr  Cucl   Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54320, 54320 作者:  Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ   |  收藏  |  浏览/下载：14/0  |  提交时间：2012/01/06 WELLS  RELAXATION  HOLE  PHOTOLUMINESCENCE  SEMICONDUCTORS  LOCALIZATION  TRANSITIONS  EXCITONS  CARRIERS  GROWTH  Wells  Relaxation  Hole  Photoluminescence  Semiconductors  Localization  Transitions  Excitons  Carriers  Growth   Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn 期刊论文  OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 316, 316, 期号: 1, 页码: 145-148, 145-148 作者:  Yang GD;  Zhu F;  Dong S;  Yang, GD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. guandongyang@gmail.com   |  收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 Diffusion  Physical vapor deposition processes  Magnetic materials  Semiconducting III-V materials  GASB/MN DIGITAL ALLOYS  ROOM-TEMPERATURE FERROMAGNETISM  RAMAN-SCATTERING  MAGNETOTRANSPORT PROPERTIES  EPITAXIAL LAYERS  THIN-FILMS  SEMICONDUCTORS  STRAIN  MAGNETOELECTRONICS  SPINTRONICS  Diffusion  Physical Vapor Deposition Processes  Magnetic Materials  Semiconducting Iii-v Materials  Gasb/mn Digital Alloys  Room-temperature Ferromagnetism  Raman-scattering  Magnetotransport Properties  Epitaxial Layers  Thin-films  Semiconductors  Strain  Magnetoelectronics  Spintronics   Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain 期刊论文  OAI收割 journal of raman spectroscopy, JOURNAL OF RAMAN SPECTROSCOPY, 2011, 2011, 卷号: 42, 42, 期号: 6, 页码: 1388-1391, 1388-1391 作者:  Zhang, J;  Tan, PH;  Zhao, WJ;  Lu, J;  Zhao, JH   |  收藏  |  浏览/下载：22/0  |  提交时间：2012/01/06 Raman spectroscopy  ultrathin Fe(3)O(4) film  crystal orientation  strain  phonon strain-shift coefficient  PULSED-LASER DEPOSITION  THIN-FILMS  SPIN-TRANSPORT  MAGNETITE  SEMICONDUCTORS  SPINTRONICS  SCATTERING  CORROSION  DEVICES  GROWTH  Raman Spectroscopy  Ultrathin Fe(3)o(4) Film  Crystal Orientation  Strain  Phonon Strain-shift Coefficient  Pulsed-laser Deposition  Thin-films  Spin-transport  Magnetite  Semiconductors  Spintronics  Scattering  Corrosion  Devices  Growth