机构

• 半导体研究所 [29]

采集方式

• OAI收割 [29]

内容类型

• 期刊论文 [29]

发表日期

• 2011 [2]
• 2010 [5]
• 2009 [3]
• 2008 [1]
• 2007 [1]
• 2005 [2]
• 更多

学科主题

• 半导体材料 [29]

筛选

浏览/检索结果: 共29条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83501 作者:  Zhou GY;  Zhang HY;  Xu B;  Ye XL 收藏  |  浏览/下载：67/4  |  提交时间：2011/07/05 INAS ISLANDS  MU-M  ESCAPE  GAAS  GAAS(100)  SUBSTRATE   Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.50 作者:  Wei HY;  Song HP;  Zhang B 收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  CORE-LEVEL PHOTOEMISSION  SB-DOPED SNO2  INN  GROWTH  GAN  NAXWO3  ALLOYS  GREEN  STATE   Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083112 Song YF (Song Yafeng); Lu YW (Lu Yanwu); Zhang BA (Zhang Biao); Xu XQ (Xu Xiaoqing); Wang J (Wang Jun); Guo Y (Guo Yan); Shi K (Shi Kai); Li ZW (Li Zhiwei); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：28/0  |  提交时间：2010/12/05 OPTICAL PHONON ENERGY  INVERSION-LAYERS  TRANSITIONS  RELAXATION  LASERS  STATES   Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 9, 页码: 2455-2459 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Liu JQ (Liu J. Q.); Xu B (Xu B.); Ye XL (Ye X. L.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：264/60  |  提交时间：2010/09/07 Quantum dots  Temperature dependent  Photoluminescence  Surface localized centers   Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 107, 期号: 1, 页码: art. no. 013102 Xu PF (Xu Peng-Fei); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Cao YL (Cao Yu-Lian); Gu; YX (Gu Yong-Xian); Liu Y (Liu Yu); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：203/54  |  提交时间：2010/04/13 energy states  optical modulation  quantum dot lasers  THRESHOLD CURRENT  WELL  GAIN   Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures 期刊论文  OAI收割 physica b-condensed matter, 2010, 卷号: 405, 期号: 1, 页码: 61-64 Zhao L; Diao HW; Zeng XB; Zhou CL; Li HL; Wang WJ 收藏  |  浏览/下载：213/74  |  提交时间：2010/04/04 Silicon thin film  HIT solar cell  Surface passivation  HETEROJUNCTION SOLAR-CELLS  HOT-WIRE CVD  YDROGEN DILUTION  N-TYPE  SPECTROSCOPY  OPTIMIZATION   Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083701 作者:  Tan HR;  Yin ZG;  You JB;  Zhang SG;  Zhang XW 收藏  |  浏览/下载：145/29  |  提交时间：2010/05/24 LIGHT-EMITTING-DIODES  SPECTROSCOPY  EPITAXY  GROWTH  FILM  SIO2   Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文  OAI收割 applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720 Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP 收藏  |  浏览/下载：65/25  |  提交时间：2010/03/08 GAAS PHOTOCATHODES  GALLIUM-ARSENIDE  ALXGA1-XAS  DIFFUSION  SURFACE  ENERGY   Dislocation core effect scattering in a quasitriangle potential well 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102 作者:  Wei HY 收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08 aluminium compounds  carrier density  carrier mobility  dislocation density  dislocation scattering  gallium compounds  III-V semiconductors  semiconductor heterojunctions  wide band gap semiconductors   Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 4, 页码: art. no. 043709 作者:  Zhang XW;  Yin ZG;  Song HP;  You JB 收藏  |  浏览/下载：80/3  |  提交时间：2010/03/08 LIGHT-EMITTING-DIODES  ZNO  ELECTROLUMINESCENCE  OFFSETS