机构

• 半导体研究所 [88]

采集方式

• OAI收割 [88]

内容类型

• 期刊论文 [76]
• 会议论文 [12]

发表日期

• 2017 [3]
• 2016 [1]
• 2015 [1]
• 2013 [4]
• 2012 [1]
• 2011 [6]
• 更多

学科主题

• 光电子学 [88]

筛选

浏览/检索结果: 共88条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文  OAI收割 Scientific Reports, 2017, 卷号: 7, 页码: 44850 作者:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu   |  收藏  |  浏览/下载：23/0  |  提交时间：2018/11/30 The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer 期刊论文  OAI收割 CrystEngComm, 2017, 卷号: 19, 页码: 4330–4337 作者:  Gaoqiang Deng;  Yuantao Zhang;  Zhen Huang;  Long Yan;  Pengchong Li   |  收藏  |  浏览/下载：17/0  |  提交时间：2018/11/30 Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer 期刊论文  OAI收割 Journal of Crystal Growth, 2017, 卷号: 467, 页码: 1-5 作者:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu 收藏  |  浏览/下载：30/0  |  提交时间：2018/07/11 Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文  OAI收割 superlattices and microstructures, 2016, 卷号: 97, 页码: 186-192 X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du 收藏  |  浏览/下载：25/0  |  提交时间：2017/03/10 Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition 期刊论文  OAI收割 vacuum, 2015, 卷号: 119, 期号: 2015, 页码: 63e67 Junyan Jiang; Yuantao Zhang; Fan Yang; Zhen Huang; Long Yan; Pengchong Li; Chen Chi; Degang Zhao; Baolin Zhang; Guotong Du 收藏  |  浏览/下载：13/0  |  提交时间：2016/03/23 Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 2013, 卷号: 371, 页码: 7-10 Zhou, Kun; Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun; Wang, Feng; Zhu, Jianjun; Yang, Hui 收藏  |  浏览/下载：12/0  |  提交时间：2013/08/27 Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 2013, 卷号: 372, 页码: 43-48 Su, X. J.; Xu, K.; Ren, G. Q.; Wang, J. F.; Xu, Y.; Zeng, X. H.; Zhang, J. C.; Cai, D. M.; Zhou, T. F.; Liu, Z. H.; Yang, H. 收藏  |  浏览/下载：12/0  |  提交时间：2013/08/27 Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth 期刊论文  OAI收割 applied physics letters, Applied Physics Letters, 2013, 2013, 卷号: 103, 103, 期号: 15, 页码: 152109, 152109 作者:  Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang   |  收藏  |  浏览/下载：12/0  |  提交时间：2014/04/09 Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth 期刊论文  OAI收割 ieee photonics technology letters, IEEE Photonics Technology Letters, 2013, 2013, 卷号: 25, 25, 期号: 24, 页码: 2401-2404, 2401-2404 作者:  Feng, Mei-Xin;  Liu, Jian-Ping;  Zhang, Shu-Ming;  Jiang, De-Sheng;  Li, Zeng-Cheng   |  收藏  |  浏览/下载：15/0  |  提交时间：2014/04/09 Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文  OAI收割 journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 25-30 Zhu, JJ; Fan, YM; Zhang, H; Lu, GJ; Wang, H; Zhao, DG; Jiang, DS; Liu, ZS; Zhang, SM; Chen, GF; Zhang, BS; Yang, H 收藏  |  浏览/下载：17/0  |  提交时间：2013/02/27