机构

• 半导体研究所 [8]
• 微电子研究所 [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [10]

内容类型

• 期刊论文 [10]

发表日期

• 2018 [1]
• 2017 [2]
• 2014 [2]
• 2011 [4]
• 2010 [1]

学科主题

• 光电子学 [7]
• 半导体物理 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 存缴方式：oaiharvest     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy 期刊论文  OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 12, 页码: 125022 作者:  Yang, Xinju;  Jia QJ(贾全杰);  Jiang, Zuimin;  Jia, Quanjie;  Zhong, Zhenyang   |  收藏  |   Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications 期刊论文  OAI收割 Electron Devices Technology and Manufacturing Conference, 2017 作者:  Liu L(刘磊);  Wang GL(王桂磊);  Henry Homayoun Radamson   |  收藏  |   Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys 期刊论文  OAI收割 Phys. Chem. Chem. Phys., 2017, 卷号: 19, 页码: 27031--27037 作者:  Wenqi Huang;  Hong Yang;  Buwen Cheng;  Chunlai Xue 收藏  |   Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration 期刊论文  OAI收割 physica b-condensed matter, PHYSICA B-CONDENSED MATTER, 2014, 2014, 卷号: 443, 443, 页码: 43-48, 43-48 作者:  Huang, WQ;  Cheng, BW;  Xue, CL;  Li, CB   |  收藏  |   Crystal Quality Improvement of GeSn Alloys by Thermal Annealing 期刊论文  OAI收割 ecs solid state letters, ECS SOLID STATE LETTERS, 2014, 2014, 卷号: 3, 3, 期号: 10, 页码: p127-p130, P127-P130 作者:  Zhang, X;  Zhang, DL;  Cheng, BW;  Liu, Z;  Zhang, GZ   |  收藏  |   GeSn p-i-n photodetector for all telecommunication bands detection 期刊论文  OAI收割 optics express, 2011, 卷号: 19, 期号: 7, 页码: 6408-6413 Su SJ; Cheng BW; Xue CL; Wang W; Cao QA; Xue HY; Hu WX; Zhang GZ; Zuo YH; Wang QM 收藏  |   Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 068103 作者:  Su SJ 收藏  |   Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 68103 Wang, W; Su, SJ; Zheng, J; Zhang, GZ; Zuo, YH; Cheng, BW; Wang, QM 收藏  |   Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy 期刊论文  OAI收割 acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.28101 Su SJ; Wang W; Zhang GZ; Hu WX; Bai AQ; Xue CL; Zuo YH; Cheng BW; Wang QM 收藏  |   Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 107, 107, 期号: 7, 页码: art. no. 073108, Art. No. 073108 作者:  Zhu YH (Zhu Yuan-Hui);  Xu Q (Xu Qiang);  Fan WJ (Fan Wei-Jun);  Wang JW (Wang Jian-Wei);  Zhu, YH, Nanyang Technol Univ, Sch EEE, 50 Nanyang Ave, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg   |  收藏  |