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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [26]
采集方式
OAI收割 [26]
内容类型
期刊论文 [24]
会议论文 [2]
发表日期
2016 [1]
2011 [5]
2010 [2]
2009 [8]
2008 [6]
2007 [4]
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学科主题
半导体材料 [26]
光电子学 [1]
半导体器件 [1]
半导体物理 [1]
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GaN-based violet lasers grown on sapphire with a novel facet fabrication method
会议论文
OAI收割
solid state lighting (sslchina), 2015 12th china international forum, 中国深圳, 2015
Yingdong Tian
;
Yun Zhang
;
Jianchang Yan
;
Xiang Chen
;
Yanan Guo
;
Xuecheng Wei
;
Junxi Wang
;
Jinmin Li
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2016/06/02
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:
Liu XF
;
Yan GG
;
Zheng L
;
Dong L
收藏
  |  
浏览/下载:37/3
  |  
提交时间:2011/07/05
4H-SiC
Raman scattering
LOPC modes
transport properties
SILICON-CARBIDE
LIGHT
GAP
Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 98, 98, 期号: 24, 页码: 241111, 241111
作者:
Zhang, L
;
Wei, XC
;
Liu, NX
;
Lu, HX
;
Zeng, JP
  |  
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2012/02/06
ALGAN/GAN HETEROSTRUCTURES
TRANSPORT-PROPERTIES
Algan/gan Heterostructures
Transport-properties
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
期刊论文
OAI收割
optics express, OPTICS EXPRESS, 2011, 2011, 卷号: 19, 19, 期号: 2, 页码: 1065-1071, 1065-1071
作者:
Wei TB
;
Kong QF
;
Wang JX
;
Li J
;
Zeng YP
  |  
收藏
  |  
浏览/下载:43/4
  |  
提交时间:2011/07/05
OUTPUT
ENHANCEMENT
Output
Enhancement
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
OAI收割
journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145
作者:
Wei TB
;
Yang JK
;
Hu Q
;
Duan RF
;
Huo ZQ
  |  
收藏
  |  
浏览/下载:80/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Cl
Pl
Stacking Fault
Hvpe
Gan
Nonpolar
Chemical-vapor-deposition
Acceptor Pair Emission
Phase Epitaxy
Grown Gan
Semiconductors
Sapphire
Films
Nitride
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
OAI收割
acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.16108, Article no.16108
作者:
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
  |  
收藏
  |  
浏览/下载:93/5
  |  
提交时间:2011/07/05
GaN-based
LED
Al composition
electron blocking layer
TEMPERATURE
ALLOYS
MOVPE
Gan-based
Led
Al Composition
Electron Blocking Layer
Temperature
Alloys
Movpe
Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire
期刊论文
OAI收割
journal of the electrochemical society, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 2010, 卷号: 157, 157, 期号: 7, 页码: h721-h726, H721-H726
作者:
Wei TB (Wei T. B.)
;
Hu Q (Hu Q.)
;
Duan RF (Duan R. F.)
;
Wei XC (Wei X. C.)
;
Yang JK (Yang J. K.)
  |  
收藏
  |  
浏览/下载:292/52
  |  
提交时间:2010/06/18
atomic force microscopy
Atomic Force Microscopy
Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers
期刊论文
OAI收割
japanese journal of applied physics, JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 49, 49, 期号: 10, 页码: art. no. 100201, Art. No. 100201
作者:
Wei TB (Wei Tongbo)
;
Wang JX (Wang Junxi)
;
Liu NX (Liu Naixin)
;
Lu HX (Lu Hongxi)
;
Zeng YP (Zeng Yiping)
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/11/14
LOW-TEMPERATURE ACTIVATION
Low-temperature Activation
Films
FILMS
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy
期刊论文
OAI收割
journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
作者:
Wei TB
;
Wei XC
;
Duan RF
收藏
  |  
浏览/下载:84/6
  |  
提交时间:2010/03/08
HRXRD
PL
Stacking fault
HVPE
GaN
Semipolar
Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113921
Sun LL
;
Yan FW
;
Zhang HX
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2010/04/03
annealing