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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [32]
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OAI收割 [32]
内容类型
期刊论文 [30]
会议论文 [2]
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2011 [2]
2010 [1]
2009 [2]
2008 [7]
2007 [4]
2006 [1]
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学科主题
半导体物理 [32]
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Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004
作者:
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Atomic Force Microscopy
Buffer Layers
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Germanium
Growth Temperature
High Resolution Transmission Electron Microscopy
Molecular Beam Epitaxy
Molecular Beams
Semiconducting Gallium
Semiconductor Device Structures
Semiconductor Quantum Wells
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
期刊论文
OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 1, 页码: article no.18102, Article no.18102
作者:
He JF
;
Niu ZC
;
Chang XY
;
Ni HQ
;
Zhu Y
  |  
收藏
  |  
浏览/下载:105/7
  |  
提交时间:2011/07/05
molecular beam epitaxy
anti-phase domain
GaAs/Ge interface
CHEMICAL VAPOR-DEPOSITION
JUNCTION SOLAR-CELLS
DOMAIN-FREE GROWTH
TEMPERATURE
QUALITY
FUTURE
Molecular Beam Epitaxy
Anti-phase Domain
Gaas/ge Interface
Chemical Vapor-deposition
Junction Solar-cells
Domain-free Growth
Temperature
Quality
Future
Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As
会议论文
OAI收割
international magnetics conference (intermag), madrid, spain, may 04-08, 2008
作者:
Gan HD
收藏
  |  
浏览/下载:65/0
  |  
提交时间:2010/03/09
Magnetic analysis
Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates
期刊论文
OAI收割
science in china series e-technological sciences, 2009, 卷号: 52, 期号: 1, 页码: 23-27
作者:
Xu YQ
收藏
  |  
浏览/下载:209/35
  |  
提交时间:2010/03/08
InAs/GaSb
superlattice
substrates
infrared detector
Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers
期刊论文
OAI收割
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 018101
作者:
Xu YQ
;
Tang B
收藏
  |  
浏览/下载:221/40
  |  
提交时间:2010/03/08
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
HETEROSTRUCTURES
TEMPERATURE
DETECTORS
GAAS(100)
FILMS
INAS
INSB
Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 6, 页码: 2277-2280
Cui, JP
;
Wang, XF
;
Duan, Y
;
He, JX
;
Zeng, YP
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2010/03/08
THIN-FILMS
BULK ZNO
SCATTERING
PRESSURE
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ
;
Zeng, YP
;
Wang, XL
;
Liu, HX
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/03/08
RHEED
INTERLAYER
PRESSURE
NITRIDES
LAYERS
MBE
Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition
期刊论文
OAI收割
japanese journal of applied physics, 2008, 卷号: 47, 期号: 4, 页码: 2225-2229 part 1
Zhu, BL
;
Zhao, XZ
;
Xu, S
;
Su, FH
;
Li, GH
;
Wu, XG
;
Wu, J
;
Wu, R
;
Liu, J
收藏
  |  
浏览/下载:41/2
  |  
提交时间:2010/03/08
laser ablation
zinc oxide
deposition process
optical properties
electrical properties and measurements
MOCVD growth of InN using a GaN buffer
期刊论文
OAI收割
superlattices and microstructures, 2008, 卷号: 43, 期号: 2, 页码: 81-85
作者:
Yang H
;
Wang LL
;
Wang H
;
Yang H
;
Zhu JJ
收藏
  |  
浏览/下载:51/1
  |  
提交时间:2010/03/08
surface
Comment on
期刊论文
OAI收割
applied physics letters, 2008, 卷号: 93, 期号: 15, 页码: art. no. 156102
Zhou ZW
;
Li C
;
Chen SY
;
Lai HK
;
Yu JZ
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/08
THERMAL-EXPANSION