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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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半导体研究所 [32]
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OAI收割 [32]
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期刊论文 [27]
会议论文 [5]
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2011 [5]
2010 [1]
2009 [1]
2008 [3]
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2006 [5]
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学科主题
半导体材料 [32]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Cao ZF
;
Luan CB
;
Chen H
;
Wang ZG
收藏
  |  
浏览/下载:56/2
  |  
提交时间:2011/07/05
AlGaN/GaN heterostructures
thermal stressing
polarization
self-consistently solving Schrodinger's and Poisson's equations
FIELD-EFFECT TRANSISTORS
POLARIZATION
STABILITY
CHARGE
GAN
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
OAI收割
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
期刊论文
OAI收割
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M
;
Wang, XL
;
Pan, X
;
Xiao, HL
;
Wang, CM
;
Hou, QF
;
Wang, ZG
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/01/06
GaN
MOCVD
Si(111)
AlN
VAPOR-PHASE EPITAXY
LAYERS
SUBSTRATE
MOCVD
STRESS
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
收藏
  |  
浏览/下载:81/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
Thermal induced facet destructive feature of quantum cascade lasers
期刊论文
OAI收割
applied physics letters, 2010, 卷号: 96, 期号: 14, 页码: art. no. 141117
Zhang QD (Zhang Quande)
;
Liu FQ (Liu Feng-Qi)
;
Zhang W (Zhang Wei)
;
Lu QY (Lu Quanyong)
;
Wang LJ (Wang Lijun)
;
Li L (Li Lu)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:123/17
  |  
提交时间:2010/04/28
laser beam effects
quantum cascade lasers
thermal conductivity
MU-M
TEMPERATURE
OPERATION
PERFORMANCE
Wet etching and infrared absorption of AlN bulk single crystals
期刊论文
OAI收割
半导体学报, 2009, 卷号: 30, 期号: 7, 页码: 27-30
作者:
Ke Jianhong
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/23
Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms
期刊论文
OAI收割
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 5, 页码: 1120-1134
Yang, JL
;
Gaspar, J
;
Paul, O
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/03/08
Bulge test
fracture
pooled Weibull analysis
silicon nitride (Si3N4)
silicon oxide (SiO2)
Study of GaN growth on ultra-thin Si membranes
期刊论文
OAI收割
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 986-989
Wang X
;
Wu AM
;
Chen J
;
Wang X
;
Wu YX
;
Zhu JJ
;
Yang H
收藏
  |  
浏览/下载:58/2
  |  
提交时间:2010/03/08
GaN
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
期刊论文
OAI收割
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ
;
Zhao, LB
;
Zhang, GY
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
;
Jia, QJ
;
Guo, LP
;
Hu, TD
收藏
  |  
浏览/下载:65/3
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
TEMPERATURE ALN INTERLAYERS
PHASE EPITAXY
OPTICAL-PROPERTIES
SURFACTANT
SUBSTRATE
STRESS
SI
REDUCTION
SAPPHIRE