机构

• 半导体研究所 [73]

采集方式

• OAI收割 [73]

内容类型

• 期刊论文 [64]
• 会议论文 [9]

发表日期

• 2014 [1]
• 2011 [1]
• 2010 [7]
• 2009 [4]
• 2008 [3]
• 2007 [6]
• 更多

学科主题

• 半导体材料 [73]

筛选

浏览/检索结果: 共73条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Tetragonal-tetragonal-monoclinic-rhombohedral transition: Strain relaxation of heavily compressed BiFeO3 epitaxial thin films 期刊论文  OAI收割 applied physics letters, 2014, 卷号: 104, 期号: 5, 页码: 052908 Fu, Z; Yin, ZG; Chen, NF; Zhang, XW; Zhao, YJ; Bai, YM; Chen, Y; Wang, HH; Zhang, XL; Wu, JL 收藏  |  浏览/下载：20/0  |  提交时间：2015/03/19 Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文  OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145 作者:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ   |  收藏  |  浏览/下载：78/4  |  提交时间：2011/07/05 CL  PL  Stacking fault  HVPE  GaN  Nonpolar  CHEMICAL-VAPOR-DEPOSITION  ACCEPTOR PAIR EMISSION  PHASE EPITAXY  GROWN GAN  SEMICONDUCTORS  SAPPHIRE  FILMS  NITRIDE  Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride   Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083112 Song YF (Song Yafeng); Lu YW (Lu Yanwu); Zhang BA (Zhang Biao); Xu XQ (Xu Xiaoqing); Wang J (Wang Jun); Guo Y (Guo Yan); Shi K (Shi Kai); Li ZW (Li Zhiwei); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：28/0  |  提交时间：2010/12/05 OPTICAL PHONON ENERGY  INVERSION-LAYERS  TRANSITIONS  RELAXATION  LASERS  STATES   In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 1, 页码: art. no. 013516 Yu JL (Yu J. L.); Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Jiang CY (Jiang C. Y.); Jia CH (Jia C. H.) 收藏  |  浏览/下载：293/18  |  提交时间：2010/08/17 MOLECULAR-BEAM EPITAXY  STRAIN RELAXATION  GROWTH TEMPERATURE  INTERFACE  ALLOYS  GAAS  HETEROSTRUCTURES  MICROSTRUCTURE  GANXAS1-X  NITROGEN   Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 107, 期号: 1, 页码: art. no. 013102 Xu PF (Xu Peng-Fei); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Cao YL (Cao Yu-Lian); Gu; YX (Gu Yong-Xian); Liu Y (Liu Yu); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：202/54  |  提交时间：2010/04/13 energy states  optical modulation  quantum dot lasers  THRESHOLD CURRENT  WELL  GAIN   Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 12, 页码: article no.124215 Wang Y; Pan JQ; Zhao LJ; Zhu HL; Wang W 收藏  |  浏览/下载：46/1  |  提交时间：2011/07/05 electroabsorption modulator  tunnel injection  wide temperature range operation  quantum well intermixing  LIGHT-SOURCE MODULE  LOW-DRIVE-VOLTAGE  DFB LASER  TEMPERATURE-DEPENDENCE  CHIRP  TRANSMISSION  OPERATION  LAYER  DIODE  GB/S   Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文  OAI收割 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 29, 页码: art. no. 295401 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Liu JQ (Liu J. Q.); Jia CH (Jia C. H.); Zhou GY (Zhou G. Y.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：336/26  |  提交时间：2010/08/17 CARRIER RELAXATION  STATES  SUPERLATTICES  CONFINEMENT  LASER   Different growth mechanisms of bimodal In As/GaAs QDs 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 308-311 作者:  Ye XL;  Zhou XL 收藏  |  浏览/下载：41/3  |  提交时间：2011/07/05 INAS QUANTUM DOTS  GAAS(001)  RELAXATION  TRANSITION  GAAS   Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文  OAI收割 thin solid films, THIN SOLID FILMS, 2010, 2010, 卷号: 519, 519, 期号: 1, 页码: 228-230, 228-230 作者:  Hao RT (Hao Ruiting);  Deng SK (Deng Shukang);  Shen LX (Shen Lanxian);  Yang PZ (Yang Peizhi);  Tu JL (Tu Jielei)   |  收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28 Gallium Arsenide  Gallium Arsenide  Gallium Antimonide  Gallium Antimonide/aluminum Antimonide  Superlattices  Molecular Beam Epitaxy  Vapor-phase Epitaxy  Surface-morphology  Growth  Superlattices  Temperature  Relaxation  Detectors  Gaas(001)  Mocvd  Films  Gallium antimonide  Gallium antimonide/Aluminum antimonide  Superlattices  Molecular Beam Epitaxy  VAPOR-PHASE EPITAXY  SURFACE-MORPHOLOGY  GROWTH  SUPERLATTICES  TEMPERATURE  RELAXATION  DETECTORS  GAAS(001)  MOCVD  FILMS   Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage 期刊论文  OAI收割 physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 3, 页码: 562-566 Liu P; He Y; Zhou JP; Mu CH; Zhang HW 收藏  |  浏览/下载：156/21  |  提交时间：2010/03/08 COPPER-TITANATE  GRAIN-BOUNDARY  BEHAVIOR