机构

• 半导体研究所 [24]

采集方式

• OAI收割 [24]

内容类型

• 期刊论文 [24]

发表日期

• 2016 [24]

学科主题

• 光电子学 [24]

筛选

浏览/检索结果: 共24条，第1-10条 帮助 限定条件 学科主题：光电子学    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位    发表日期：2016     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure 期刊论文  OAI收割 journal of alloys and compounds, 2016, 卷号: 670, 页码: 258-261 Xiaoguang He; Degang Zhao; Wei Liu; Jing Yang; Xiaojing Li; Xiang Li 收藏  |  浏览/下载：11/0  |  提交时间：2017/03/10 Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文  OAI收割 superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225 Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du 收藏  |  浏览/下载：29/0  |  提交时间：2017/03/10 XPS study of impurities in Si-doped AlN film 期刊论文  OAI收割 surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10 Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution 期刊论文  OAI收割 applied surface science, 2016, 卷号: 360, 页码: 772-776 Junyan Jiang; Yuantao Zhang; Chen Chi; Fan Yang; Pengchong Li; Degang Zhao; Baolin Zhang; Guotong Du 收藏  |  浏览/下载：11/0  |  提交时间：2017/03/10 The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文  OAI收割 aip advances, 2016, 卷号: 6, 页码: 035124 P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10 Fabrication of iridium oxide neural electrodes at the wafer level 期刊论文  OAI收割 science china technological sciences, 2016, 卷号: 59, 期号: 9, 页码: 1399-1406 ZHANG He; PEI WeiHua; ZHAO ShanShan; YANG XiaoWei; LIU RuiCong; LIU YuanYuan; WU Xian; GUO DongMei; GUI Qiang; GUO XuHong; XING Xiao; WANG YiJun; CHEN HongDa 收藏  |  浏览/下载：17/0  |  提交时间：2017/03/16 Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films 期刊论文  OAI收割 chinese physics b, 2016, 卷号: 25, 期号: 2, 页码: 027102 Jing Yang; De-Gang Zhao; De-Sheng Jiang; Ping Chen; Zong-Shun Liu; Jian-Jun Zhu; Ling-Cong Le; Xiao-Jing Li; Xiao-Guang He; Li-Qun Zhang; Hui Yang 收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10 Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文  OAI收割 journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 4, 页码: 041211 Xiang Li; Zongshun Liu; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Jing Yang; Lingcong Le; Wei Liu; Xiaoguang He; Xiaojing Li; Feng Liang 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10 Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割 applied physics a, 2016, 卷号: 122, 期号: 9 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10 Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition 期刊论文  OAI收割 superlattices and microstructures, 2016, 卷号: 91, 页码: 259-268 Fan Yang; Yuan-tao Zhang; Xu Han; Peng-chong Li; Jun-yan Jiang; Zhen Huang; Jing-zhi Yin; De-gang Zhao; Bao-lin Zhang; Guo-tong Du 收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10