机构

• 半导体研究所 [38]

采集方式

• OAI收割 [38]

内容类型

• 期刊论文 [34]
• 会议论文 [4]

发表日期

• 2014 [3]
• 2012 [4]
• 2011 [10]
• 2010 [6]
• 2009 [1]
• 2008 [5]
• 更多

学科主题

• 半导体材料 [38]

筛选

浏览/检索结果: 共38条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector 期刊论文  OAI收割 physical review b, 2014, 卷号: 90, 期号: 8, 页码: 085310 Liang, SH; Zhang, TT; Barate, P; Frougier, J; Vidal, M; Renucci, P; Xu, B; Jaffres, H; George, JM; Devaux, X; Hehn, M; Marie, X; Mangin, S; Yang, HX; Hallal, A; Chshiev, M; Amand, T; Liu, HF; Liu, DP; Han, XF; Wang, ZG; Lu, Y 收藏  |  浏览/下载：18/0  |  提交时间：2015/03/25 Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers 期刊论文  OAI收割 journal of applied physics, 2014, 卷号: 115, 期号: 23, 页码: 233102 Yang, YJ; Wang, JX; Li, JM; Zeng, YP 收藏  |  浏览/下载：13/0  |  提交时间：2015/04/02 Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures 期刊论文  OAI收割 scientific reports, 2014, 卷号: 4, 页码: 6521 Wang, JM; Xu, FJ; Zhang, X; An, W; Li, XZ; Song, J; Ge, WK; Tian, GS; Lu, J; Wang, XQ; Tang, N; Yang, ZJ; Li, W; Wang, WY; Jin, P; Chen, YH; Shen, B 收藏  |  浏览/下载：20/0  |  提交时间：2015/03/20 Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割 chinese physics letters, 2012, 卷号: 29, 期号: 2, 页码: 26801 Sang, L; Liu, JM; Xu, XQ; Wang, J; Zhao, GJ; Liu, CB; Gu, CY; Liu, GP; Wei, HY; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/17 Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres 期刊论文  OAI收割 materials letters, MATERIALS LETTERS, 2012, 2012, 卷号: 68, 68, 页码: 327-330, 327-330 作者:  Wei, TB;  Chen, Y;  Hu, Q;  Yang, JK;  Huo, ZQ   |  收藏  |  浏览/下载：20/0  |  提交时间：2013/03/17 Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes 期刊论文  OAI收割 optics express, OPTICS EXPRESS, 2012, 2012, 卷号: 20, 20, 期号: 6, 页码: 6808-6815, 6808-6815 作者:  Zhang, YY;  Xie, HZ;  Zheng, HY;  Wei, TB;  Yang, H   |  收藏  |  浏览/下载：17/0  |  提交时间：2013/03/17 20 W High-Power Picosecond Single-Walled Carbon Nanotube Based MOPA Laser System 期刊论文  OAI收割 journal of lightwave technology, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2012, 2012, 卷号: 30, 30, 期号: 16, 页码: 2713-2717, 2713-2717 作者:  Zhang L (Zhang, Ling);  Wang YG (Wang, Yong Gang);  Yu HJ (Yu, Hai Juan);  Sun W (Sun, Wei);  Yang YY (Yang, Ying Ying)   |  收藏  |  浏览/下载：16/0  |  提交时间：2013/04/02 Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.69 作者:  Song HP;  Wei HY;  Li CM;  Jiao CM 收藏  |  浏览/下载：65/4  |  提交时间：2011/07/05 CATHODOLUMINESCENCE CHARACTERIZATION  GALLIUM NITRIDE  STRESSES  LAYERS  HETEROSTRUCTURE  DEPOSITION  CONSTANTS  MECHANISM  SAPPHIRE  STRAIN   MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者:  Jia CH;  Song HP 收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05 Anisotropy  Crystal morphology  Metalorganic chemical vapor deposition  a-Plane InN  INDIUM NITRIDE  MOVPE GROWTH  CUBIC INN  SAPPHIRE  GAN  MBE   Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文  OAI收割 nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603 作者:  Song HP 收藏  |  浏览/下载：68/3  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  SEMICONDUCTOR NANOWIRES  NITRIDE NANOTUBES  GAN  EMISSION  MECHANISM