中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [9]
采集方式
OAI收割 [9]
内容类型
期刊论文 [6]
会议论文 [3]
发表日期
2017 [2]
2007 [4]
2006 [3]
学科主题
半导体材料 [9]
筛选
浏览/检索结果:
共9条,第1-9条
帮助
限定条件
学科主题:半导体材料
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
发表日期升序
发表日期降序
题名升序
题名降序
作者升序
作者降序
Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation
期刊论文
OAI收割
Journal of Applied Physics, 2017, 卷号: 121, 页码: 193901
作者:
X. L. Zeng
;
J. L. Yu
;
S. Y. Cheng
;
Y. F. Lai, Y. H. Chen
;
W. Huang
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2018/05/23
A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition
期刊论文
OAI收割
ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31
作者:
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2018/06/15
Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
期刊论文
OAI收割
solid state communications, 2007, 卷号: 143, 期号: 6-7, 页码: 300-303
Zhou, WZ (Zhou, W. Z.)
;
Lin, T (Lin, T.)
;
Shang, LY (Shang, L. Y.)
;
Yu, G (Yu, G.)
;
Huang, ZM (Huang, Z. M.)
;
Guo, SL (Guo, S. L.)
;
Gui, YS (Gui, Y. S.)
;
Dai, N (Dai, N.)
;
Chu, JH (Chu, J. H.)
;
Cui, LJ (Cui, L. J.)
;
Li, DL (Li, D. L.)
;
Gao, HL (Gao, H. L.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/29
quantum well
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers
会议论文
OAI收割
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Ning, J (Ning, J.)
;
Zhao, YM (Zhao, Y. M.)
;
Luo, MC (Luo, M. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:88/9
  |  
提交时间:2010/03/29
AVALANCHE PHOTODIODES
AREA
Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices
期刊论文
OAI收割
applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7506-7509
Liu JP
;
Qu SC (Qu, S. C.)
;
Zeng XB
;
Xu Y
;
Gou XF
;
Wang ZJ
;
Zhou HY
;
Wang ZG
收藏
  |  
浏览/下载:71/0
  |  
提交时间:2010/03/29
ZnO
Micro-raman investigation of defects in a 4H-SiC homoepilayer
会议论文
OAI收割
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Zhao, YM (Zhao, Y. M.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:161/28
  |  
提交时间:2010/03/29
micro-raman
4H-SiC
defects
3C-inclusions
triangle-shaped inclusion
EPITAXIAL LAYERS
SILICON-CARBIDE
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates
期刊论文
OAI收割
journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
;
Guo SL (Guo S. L.)
;
Chu JH (Chu J. H.)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/04/11
QUANTUM-WELL STRUCTURES
PHOTOLUMINESCENCE SPECTRA
HEMTS
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
期刊论文
OAI收割
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.)
;
Liu XF (Liu X. F.)
;
Gong QC (Gong Q. C.)
;
Wang L (Wang L.)
;
Zhao WS (Zhao W. S.)
;
Li JY (Li J. Y.)
;
Zeng YP (Zeng Y. P.)
;
Li JM (Li J. M.)
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/04/11
4H-SiC
homoepitaxial layers
surface morphological defect
optical microscopy
SILICON-CARBIDE
DISLOCATIONS
FILMS
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
会议论文
OAI收割
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Sun, GS (Sun, G. S.)
;
Liu, XF (Liu, X. F.)
;
Gong, QC (Gong, Q. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Li, JY (Li, J. Y.)
;
Zeng, YP (Zeng, Y. P.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:166/18
  |  
提交时间:2010/03/29
4H-SiC