中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 光电子学 [15]
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文  OAI收割
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者:  
X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN
收藏  |  浏览/下载:20/0  |  提交时间:2018/07/11
XPS study of impurities in Si-doped AlN film 期刊论文  OAI收割
surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:28/0  |  提交时间:2017/03/10
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文  OAI收割
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10
Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割
applied physics a, 2016, 卷号: 122, 期号: 9
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10
Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割
materials technology, 2016
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:22/0  |  提交时间:2017/03/10
Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文  OAI收割
optics express, 2015, 卷号: 23, 期号: 12, 页码: 15935
W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
收藏  |  浏览/下载:19/0  |  提交时间:2016/03/23
Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy 期刊论文  OAI收割
physica b-condensed matter, 2010, 卷号: 405, 期号: 16, 页码: 3433-3435
Zhao CW (Zhao C. W.); Xing YM (Xing Y. M.); Yu JZ (Yu J. Z.); Han GQ (Han G. Q.)
收藏  |  浏览/下载:100/3  |  提交时间:2010/09/07
Silicon bench for passive coupling and packaging of high-frequency optoelectronic devices 期刊论文  OAI收割
ieee transactions on advanced packaging, 2007, 卷号: 30, 期号: 1, 页码: 34-37
Yang, H (Yang, H.); Zhu, HL (Zhu, H. L.); Xie, HY (Xie, H. Y.); Zhao, LJ (Zhao, L. J.); Zhou, F (Zhou, F.); Wang, W (Wang, W.)
收藏  |  浏览/下载:25/0  |  提交时间:2010/03/29
Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文  OAI收割
journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.046101
Li DY (Li D. Y.); Huang YZ (Huang Y. Z.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Ye XJ (Ye X. J.); Chong M (Chong M.); Chen LH (Chen L. H.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载:45/0  |  提交时间:2010/04/11
The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers 期刊论文  OAI收割
materials letters, 2006, 卷号: 60, 期号: 29-30, 页码: 3693-3696
Wang XL (Wang X. L.); Zhao DG (Zhao D. G.); Li XY (Li X. Y.); Gong HM (Gong H. M.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载:106/0  |  提交时间:2010/04/11