机构

• 半导体研究所 [9]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [9]

发表日期

• 2013 [2]
• 2011 [1]
• 2010 [2]
• 2007 [2]
• 2006 [2]

学科主题

• 半导体材料 [9]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Intrinsic photoinduced anomalous Hall effect in insulating GaAs_AlGaAs quantum wells at room temperature 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 102, 期号: 20, 页码: 202408 - 202408-5 J. L. Yu, Y. H. Chen, Y. Liu, C. Y. Jiang, H. Ma, L. P. Zhu, X. D. Qin 收藏  |  浏览/下载：18/0  |  提交时间：2014/03/18 Observation of circular dichroism in (001)-oriented P-I-N InGaAs/GaAs quantum wells without magnetic field 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 102, 期号: 7, 页码: 072404 Yu, J. L.; Chen, Y. H.; Liu, Y.; Jiang, C. Y.; Ma, H.; Zhu, L. P.; Qin, X. D. 收藏  |  浏览/下载：14/0  |  提交时间：2013/09/22 Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 110, 期号: 11, 页码: 113509 Shi K (Shi K.); Zhang PF (Zhang P. F.); Wei HY (Wei H. Y.); Jiao CM (Jiao C. M.); Jin P (Jin P.); Liu XL (Liu X. L.); Yang SY (Yang S. Y.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：12/0  |  提交时间：2012/02/22 The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文  OAI收割 solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994 Song HP (Song H. P.); Zheng GL (Zheng G. L.); Yang AL (Yang A. L.); Guo Y (Guo Y.); Wei HY (Wei H. Y.); Li CM (Li C. M.); Yang SY (Yang S. Y.); Liu XL (Liu X. L.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/27 ZnO  In2O3  MOCVD  Photoelectron spectroscopies  IN2O3-ZNO FILMS  TRANSPARENT  OXIDE  SEMICONDUCTORS  INN   Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文  OAI收割 nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343 Liu JM (Liu J. M.); Liu XL (Liu X. L.); Xu XQ (Xu X. Q.); Wang J (Wang J.); Li CM (Li C. M.); Wei HY (Wei H. Y.); Yang SY (Yang S. Y.); Zhu QS (Zhu Q. S.); Fan YM (Fan Y. M.); Zhang XW (Zhang X. W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：145/21  |  提交时间：2010/08/17 Valence band offset  w-InN/h-BN heterojunction  X-ray photoelectron spectroscopy  Conduction band offset  Valence band offset  NEGATIVE ELECTRON-AFFINITY  INDIUM NITRIDE  WURTZITE GAN  SURFACE  FILM  ALN  TRANSPORT  EMISSION  NAXWO3  GROWTH   Combined structure of ZnO vertical well-aligned nanorods and net-like structures on AIN/sapphire 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 306, 期号: 1, 页码: 12-15 Wei, HY (Wei, H. Y.); Cong, GW (Cong, G. W.); Zhang, PF (Zhang, P. F.); Hu, WG (Hu, W. G.); Wu, JJ (Wu, J. J.); Jiao, CM (Jiao, C. M.); Liu, XL (Liu, X. L.); Zhu, QS (Zhu, Q. S.); Wang, ZG (Wang, Z. G.) 收藏  |  浏览/下载：21/0  |  提交时间：2010/03/29 nanostructure   Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文  OAI收割 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013 Zhang PF (Zhang, P. F.); Liu XL (Liu, X. L.); Wei HY (Wei, H. Y.); Fan HB (Fan, H. B.); Liang ZM (Liang, Z. M.); Jin P (Jin, P.); Yang SY (Yang, S. Y.); Jiao CM (Jiao, C. M.); Zhu QS (Zhu, Q. S.); Wang ZG (Wang, Z. G.) 收藏  |  浏览/下载：21/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 QUANTUM-WELL STRUCTURES  PHOTOLUMINESCENCE SPECTRA  HEMTS   Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) 收藏  |  浏览/下载：20/0  |  提交时间：2010/04/11 characterization  point defects  molecular beam epitaxy  semiconducting gallium compounds  semiconducting indium compounds  semiconducting ternary compounds  1.55 MU-M  QUANTUM-WELLS  TEMPERATURE  GAAS