中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体研究所 [21]
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Excitation fluence dependence of spin-wave dynamics and intrinsic gilbert damping in epitaxial co2feal film 期刊论文  iSwitch采集
Japanese journal of applied physics, 2019, 卷号: 58, 期号: 4
作者:  
Li,Shufa;  Cheng,Chuyuan;  Meng,Kangkang;  Chen,Chunlei
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Microstructure and electrical properties of y(no3)(3)center dot 6h(2)o-doped zno-bi2o3-based varistor ceramics 期刊论文  iSwitch采集
Journal of alloys and compounds, 2011, 卷号: 509, 期号: 38, 页码: 9312-9317
作者:  
Xu, Dong;  Cheng, Xiaonong;  Yuan, Hongming;  Yang, Juan;  Lin, Yuanhua
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Characteristics of high al content algan grown by pulsed atomic layer epitaxy 期刊论文  iSwitch采集
Applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  
Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai
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Metal electrode influence on the wet selective etching of gaas/algaas 期刊论文  iSwitch采集
Journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 4
作者:  
Wang Jie;  Han Qin;  Yang Xiao-Hong;  Wang Xiu-Ping;  Ni Hai-Qiao
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Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates 期刊论文  iSwitch采集
Chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 5
作者:  
Wang Wei;  Su Shao-Jian;  Zheng Jun;  Zhang Guang-Ze;  Zuo Yu-Hua
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Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing 期刊论文  iSwitch采集
Applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
作者:  
Wang, Wei;  Su, Shaojian;  Zheng, Jun;  Zhang, Guangze;  Xue, Chunlai
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Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates 期刊论文  iSwitch采集
Journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
作者:  
Su, Shaojian;  Wang, Wei;  Cheng, Buwen;  Zhang, Guangze;  Hu, Weixuan
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Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism 期刊论文  iSwitch采集
Acta physica sinica, 2010, 卷号: 59, 期号: 2, 页码: 1169-1174
作者:  
Peng Ying-Cai;  Fan Zhi-Dong;  Bai Zhen-Hua;  Ma Lei
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Room temperature photoluminescence of tensile-strained ge/si0.13ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文  iSwitch采集
Applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: 3
作者:  
Chen, Yanghua;  Li, Cheng;  Zhou, Zhiwen;  Lai, Hongkai;  Chen, Songyan
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Small sige quantum dots obtained by excimer laser annealing 期刊论文  iSwitch采集
Journal of crystal growth, 2008, 卷号: 310, 期号: 16, 页码: 3746-3751
作者:  
Han, Genquan;  Zeng, Yugang;  Liu, Yan;  Yu, Jinzhong;  Cheng, Buwen
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