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浏览/检索结果: 共23条，第1-10条 帮助

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Dynamical manipulation of a dual-polarization plasmon-induced transparency employing an anisotropic graphene-black phosphorus heterostructure 期刊论文  OAI收割
OPTICS EXPRESS, 2021, 卷号: 29, 期号: 19, 页码: 29690-29703
作者:  Luo, Peng;  Wei, Wei;  Lan, Guilian;  Wei, Xingzhan;  Meng, Liya
  |  收藏  |  浏览/下载：27/0  |  提交时间：2021/11/26
Recent progress of integrated circuits and optoelectronic chips 期刊论文  OAI收割
SCIENCE CHINA-INFORMATION SCIENCES, 2021, 卷号: 64, 期号: 10, 页码: 201401
作者:  Hao, Yue;   Xiang, Shuiying;   Han, Genquan;   Zhang, Jincheng;   Ma, Xiaohua;   Zhu, Zhangming;   Guo, Xingxing;   Zhang, Yahui;   Han, Yanan;   Song, Ziwei;   Liu, Yan;   Yang, Ling;   Zhou, Hong;   Shi, Jiangyi;   Zhang, Wei;   Xu, Min;   Zhao, Weisheng;   Pan, Biao;   Huang, Yangqi;   Liu,
  |  收藏  |  浏览/下载：51/0  |  提交时间：2022/03/28
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 期刊论文  OAI收割
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 3, 页码: 444-447
作者:  Hongjuan Wang;   Xiangwei Jiang ;   Member, IEEE ;   Nuo Xu;   Member, IEEE ;   Genquan Han ;   Member, IEEE ;   Yue Hao;   Senior Member, IEEE ;   Shu-Shen Li;   David Esseni;   Fellow, IEEE
  |  收藏  |  浏览/下载：36/0  |  提交时间：2019/11/18
Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction 期刊论文  OAI收割
Japanese Journal of Applied Physics, 2017, 卷号: 56, 期号: 4, 页码: 04CD07
作者:  Hongjuan Wang;  Genquan Han;  Xiangwei Jiang;  Yan Liu;  Chunfu Zhang
收藏  |  浏览/下载：18/0  |  提交时间：2018/06/15
Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain 期刊论文  OAI收割
aip advances, AIP ADVANCES, 2015, 2015, 卷号: 5, 5, 页码: 057145, 057145
作者:  Genquan Han;  Yibo Wang;  Yan Liu;  Hongjuan Wang;  Mingshan Liu
  |  收藏  |  浏览/下载：18/0  |  提交时间：2016/03/22
Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility 期刊论文  OAI收割
international journal of thermophysics, International Journal of Thermophysics, 2015, 2015, 卷号: 36, 36, 页码: 980–986, 980–986
作者:  Yan Liu;  Jing Yan;  Hongjuan Wang
  |  收藏  |  浏览/下载：24/0  |  提交时间：2016/03/22
Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文  OAI收割
semiconductor science and technology, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 2014, 卷号: 29, 29, 期号: 11, 页码: 115027, 115027
作者:  Liu, Yan;  Yan, Jing;  Liu, Mingshan;  Wang, Hongjuan;  Zhang, Qingfang
  |  收藏  |  浏览/下载：18/0  |  提交时间：2015/03/19
Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ 期刊论文  OAI收割
ieee transactions on electron devices, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 2014, 卷号: 61, 61, 期号: 11, 页码: 3639-3645, 3639-3645
作者:  Liu, Yan;  Yan, Jing;  Wang, Hongjuan;  Zhang,Qingfang;  Liu, Mingshan
  |  收藏  |  浏览/下载：24/0  |  提交时间：2015/03/20
Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文  OAI收割
ieee transactions on electron devices, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene Yu-Jin; Su, Shaojian; Xue, Chunlai); Cheng, Buwen; Yeo, Yee-Chia
收藏  |  浏览/下载：20/0  |  提交时间：2013/08/27
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文  OAI收割
solid-state electronics, 2013, 卷号: 83, 页码: 66-70
Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia
收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27