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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [9]
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OAI收割 [9]
内容类型
期刊论文 [9]
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2011 [1]
2009 [2]
2006 [1]
2004 [1]
2003 [1]
2002 [1]
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学科主题
半导体材料 [9]
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学科主题:半导体材料
内容类型:期刊论文
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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
OAI收割
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
收藏
  |  
浏览/下载:236/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE
期刊论文
OAI收割
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者:
Yang JK
;
Wei TB
;
Duan RF
收藏
  |  
浏览/下载:73/3
  |  
提交时间:2010/03/08
VAPOR-PHASE EPITAXY
DISLOCATIONS
SUBSTRATE
LAYER
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
期刊论文
OAI收割
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.)
;
Liu XF (Liu X. F.)
;
Gong QC (Gong Q. C.)
;
Wang L (Wang L.)
;
Zhao WS (Zhao W. S.)
;
Li JY (Li J. Y.)
;
Zeng YP (Zeng Y. P.)
;
Li JM (Li J. M.)
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/04/11
4H-SiC
homoepitaxial layers
surface morphological defect
optical microscopy
SILICON-CARBIDE
DISLOCATIONS
FILMS
Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer
期刊论文
OAI收割
journal of crystal growth, 2004, 卷号: 265, 期号: 1-2, 页码: 60-64
Zhang, CL
;
Wang, ZG
;
Zhao, FA
;
Xu, B
;
Jin, P
收藏
  |  
浏览/下载:212/52
  |  
提交时间:2010/03/09
line defects
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ
;
Kong X
;
Wan L
;
Wang YQ
;
Duan XF
;
Lu Y
;
Liu XL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/08/12
amorphous layer
dislocation
transmission electron microscopy
metalorganic chemical vapor deposition
GaN
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
HETEROEPITAXIAL GROWTH
ELECTRON-DIFFRACTION
DEFECT STRUCTURE
HETEROSTRUCTURE
DISLOCATIONS
MICROSCOPY
(111)SI
LAYER
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
作者:
Zhao DG
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2010/08/12
X-ray diffraction
etching
metalorganic vapor-phase epitaxy
nitrides
semiconducting III-V materials
LIGHT-EMITTING-DIODES
VAPOR-PHASE EPITAXY
FILMS
DISLOCATIONS
DENSITY
GROWTH
LAYERS
ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON
期刊论文
OAI收割
solid state communications, 1994, 卷号: 92, 期号: 12, 页码: 987-989
LEHTO N
;
MARKLUND S
;
WANG YL
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/11/15
DISLOCATIONS
GERMANIUM
DISSOCIATION
ENERGY
ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT
期刊论文
OAI收割
journal of applied physics, 1991, 卷号: 70, 期号: 1, 页码: 511-513
LI JM
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/11/15
CZOCHRALSKI-GROWN SILICON
MICRODEFECTS
DISLOCATIONS
BEHAVIOR
WAFERS