机构

• 半导体研究所 [17]

采集方式

• OAI收割 [17]

内容类型

• 期刊论文 [17]

发表日期

• 2011 [1]
• 2010 [1]
• 2009 [1]
• 2008 [1]
• 2006 [1]
• 2005 [1]
• 更多

学科主题

• 半导体物理 [17]

筛选

浏览/检索结果: 共17条，第1-10条 帮助 限定条件 学科主题：半导体物理    内容类型：期刊论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割 journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102 作者:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y   |  收藏  |  浏览/下载：24/0  |  提交时间：2012/01/06 1.3 MU-M  STRAIN RELIEF  LASERS  SUBSTRATE  PHOTOLUMINESCENCE  DISLOCATIONS  OPERATION  RANGE  1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range   Optical properties of UO2 and PuO2 期刊论文  OAI收割 journal of nuclear materials, JOURNAL OF NUCLEAR MATERIALS, 2010, 2010, 卷号: 400, 400, 期号: 2, 页码: 151-156, 151-156 作者:  Shi HL (Shi Hongliang);  Chu MF (Chu Mingfu);  Zhang P (Zhang Ping);  Zhang, P, Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. zhang_ping@iapcm.ac.cn   |  收藏  |  浏览/下载：75/0  |  提交时间：2010/06/18 ELECTRONIC-STRUCTURE  Electronic-structure  Uranium-dioxide  Point-defects  Photoemission  Energy  Approximation  Energetics  Plutonium  Crystal  Spectra  URANIUM-DIOXIDE  POINT-DEFECTS  PHOTOEMISSION  ENERGY  APPROXIMATION  ENERGETICS  PLUTONIUM  CRYSTAL  SPECTRA   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文  OAI收割 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)   Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302 作者:  Jiang DS 收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11 ROOM-TEMPERATURE  SILICON  SEMICONDUCTORS  DISLOCATIONS  SPECTRA   Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation 期刊论文  OAI收割 high energy physics and nuclear physics-chinese edition, 2005, 卷号: 29, 期号: suppl.s, 页码: 37-39 Chen J; Wang JF; Zhang JC; Wang H; Huang Y; Wang YT; Yang H; Jia QJ 收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11 GaN  metalorganic chemical vapor deposition (MOCVD)  epitaxy lateral overgrowth  stacking faults  synchrotron radiation X-ray diffraction (XRD)  pole figure  WURTZITE GAN  LUMINESCENCE   Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 期刊论文  OAI收割 microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339 Wang QY; Wang JH; Deng HF; Lin LY 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 neutron irradiation  annealing  defects in silicon  SPECTRA   Fe-diffusion-induced defects in InP annealed in iron phosphide ambient 期刊论文  OAI收割 japanese journal of applied physics part 1-regular papers short notes & review papers, 2002, 卷号: 41, 期号: 4a, 页码: 1929-1931 Zhao YW; Dong HW; Jiao JH; Zhao JQ; Lin LY 收藏  |  浏览/下载：96/7  |  提交时间：2010/08/12 indium phosphide  annealing  semi-insulating  defect  diffusion  ENCAPSULATED CZOCHRALSKI INP  SEMIINSULATING INP  PHOTO-LUMINESCENCE  INDIUM-PHOSPHIDE  UNDOPED INP  PHOTOLUMINESCENCE  CRYSTALS  PRESSURE   Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance 期刊论文  OAI收割 journal of applied physics, 2002, 卷号: 92, 期号: 4, 页码: 1968-1970 Dong HW; Zhao YW; Zhang YH; Jiao JH; Zhao JQ; Lin LY 收藏  |  浏览/下载：63/15  |  提交时间：2010/08/12 FE-DOPED INP  SEMIINSULATING INP  UNDOPED INP  SPECTROSCOPY  WAFER  UNIFORMITY  PRESSURE  TRAPS   Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs 期刊论文  OAI收割 physical review b, 2001, 卷号: 64, 期号: 4, 页码: art.no.045317 作者:  Xu B 收藏  |  浏览/下载：90/6  |  提交时间：2010/08/12 SPECTROSCOPY