中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共28条,第1-10条 帮助

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Taiji program in space for gravitational universe with the first run key technologies test in Taiji-1 期刊论文  OAI收割
INTERNATIONAL JOURNAL OF MODERN PHYSICS A, 2021, 卷号: 36, 期号: 11N12, 页码: 2
作者:  
Wu YL(吴岳良);  Luo ZR(罗子人);  Wang, Jian-Yu;  Bai, Meng;  Bian, Wei
  |  收藏  |  浏览/下载:162/0  |  提交时间:2021/06/21
Large-river dominated black carbon flux and budget: A case study of the estuarine-inner shelf of East China Sea, China 期刊论文  OAI收割
Science of the Total Environment, 2019, 卷号: 651, 页码: 2489–2496
作者:  
Yin Fang;  Yingjun Chen;  ming Luo;  Jun Li;  Gan Zhang;  Limin Hu;  Chongguo Tian;  YongMei Zheng;  Tian Lin
  |  收藏  |  浏览/下载:281/0  |  提交时间:2019/06/12
Role of Ti Electrode on the Electrical Characterization of Filament within Al 2 O 3 Based Antifuse 期刊论文  OAI收割
ECS Journal of Solid State Science and Technology, 2018
作者:  
Wang ZJ(王志军);  Tian M(田敏);  Xu J(许静);  Zhong HC(钟汇才);  Li Li
  |  收藏  |  浏览/下载:10/0  |  提交时间:2019/05/20
Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing 期刊论文  OAI收割
Materials, 2018
作者:  
Wei Zou;  Zhijun Qiu;  Dongping Wu;  Luo J(罗军);  Xiangbiao Zhou
  |  收藏  |  浏览/下载:21/0  |  提交时间:2019/05/20
In Situ Thermal Atomization To Convert Supported Nickel Nanoparticles into Surface-Bound Nickel Single-Atom Catalysts 期刊论文  OAI收割
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2018, 卷号: 57, 期号: 43, 页码: 14095-14100
作者:  
Dong JC(董俊才);  Chen WX(陈文星);  Li, ZY;  Wu, Y;  Luo, J
  |  收藏  |  浏览/下载:47/0  |  提交时间:2019/09/24
On the manifestation ofGe Pre-amorphization Implantation (PAI) in forming ultrathin TiSix for Ti direct contact on Si in sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology nodes 期刊论文  OAI收割
ECS Journal of Solid State Science and Technology, 2017
作者:  
Wang GL(王桂磊);  Li JF(李俊峰);  Zhao C(赵超);  Ye TC(叶甜春);  Chen DP(陈大鹏)
  |  收藏  |  浏览/下载:75/0  |  提交时间:2018/06/08
pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology 期刊论文  OAI收割
Nanoscale Research Letters, 2017
作者:  
Zhao C(赵超);  Wang GL(王桂磊);  Luo J(罗军);  Liu JB(刘金彪);  Yang T(杨涛)
  |  收藏  |  浏览/下载:15/0  |  提交时间:2018/07/05
Low frequency noise characterization of 22nm PMOS featuring with filling W gate using different precursor 会议论文  OAI收割
作者:  
Eddy Simoen;  Wang GL(王桂磊);  Luo J(罗军);  Zhao C(赵超);  Li JF(李俊峰)
  |  收藏  |  浏览/下载:12/0  |  提交时间:2018/07/26
Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors 期刊论文  OAI收割
Nanoscale Research Letters, 2017
作者:  
Wang GL(王桂磊);  Ye TC(叶甜春);  Henry Homayoun Radamson;  Zhao C(赵超);  Zhu HL(朱慧珑)
  |  收藏  |  浏览/下载:12/0  |  提交时间:2018/07/05
Hot Implantations of P into Ge: Impact on the Diffusion Profile 期刊论文  OAI收割
ECS Journal of Solid State Science and Technology, 2017
作者:  
Xiang JJ(项金娟);  Eddy Simoen;  Luo J(罗军);  Liu JB(刘金彪);  Ye TC(叶甜春)
  |  收藏  |  浏览/下载:19/0  |  提交时间:2018/06/08