机构

• 半导体研究所 [16]

采集方式

• OAI收割 [10]
• iSwitch采集 [6]

内容类型

• 期刊论文 [16]

发表日期

• 2010 [2]
• 2001 [4]
• 2000 [4]
• 1998 [2]
• 1997 [4]

学科主题

• 半导体材料 [8]
• 半导体物理 [2]

筛选

浏览/检索结果: 共16条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning 期刊论文  OAI收割 journal of magnetism and magnetic materials, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 2010, 卷号: 322, 322, 期号: 21, 页码: 3481-3484, 3481-3484 作者:  Wang KY (Wang K. Y.);  Edmonds KW (Edmonds K. W.);  Irvine AC (Irvine A. C.);  Wunderlich J (Wunderlich J.);  Olejnik K (Olejnik K.)   |  收藏  |  浏览/下载：115/8  |  提交时间：2010/09/07 Domain wall resistance  Domain Wall Resistance  Pinning  Dependence  Pinning  Dependence   Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2010, 2010, 卷号: 97, 97, 期号: 26, 页码: article no.262102, Article no.262102 作者:  Wang KY;  Edmonds KW;  Irvine AC;  Tatara G;  De Ranieri E   |  收藏  |  浏览/下载：57/2  |  提交时间：2011/07/05 MN)AS  (GA  Mn)As  (Ga   Competition between band gap and yellow luminescence in undoped gan grown by movpe on sapphire substrate 期刊论文  iSwitch采集 Journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 96-103 作者:  Xu, HZ;  Bell, A;  Wang, ZG;  Okada, Y;  Kawabe, M 收藏  |  浏览/下载：32/0  |  提交时间：2019/05/12 Gallium nitride  Metalorganic vapor-phase epitaxy  Photoluminescence  Yellow luminescence   Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 96-103 Xu HZ; Bell A; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT 收藏  |  浏览/下载：62/0  |  提交时间：2010/08/12 gallium nitride  metalorganic vapor-phase epitaxy  photoluminescence  yellow luminescence  N-TYPE GAN  PERSISTENT PHOTOCONDUCTIVITY  THIN-FILMS  DOPED GAN  DEEP LEVELS  ORIGIN  PHOTOLUMINESCENCE  DEPENDENCE  VACANCIES  EPITAXY   Effect of in situ thermal treatment during growth on crystal quality of gan epilayer grown on sapphire substrate by movpe 期刊论文  iSwitch采集 Journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 110-117 作者:  Xu, HZ;  Takahashi, K;  Wang, CX;  Wang, ZG;  Okada, Y 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Gallium nitride  Metalorganic vapor-phase epitaxy (movpe) annealing  Crystal quality   Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 110-117 Xu HZ; Takahashi K; Wang CX; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT 收藏  |  浏览/下载：69/0  |  提交时间：2010/08/12 gallium nitride  metalorganic vapor-phase epitaxy (MOVPE) annealing  crystal quality  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  BUFFER LAYER  PHASE EPITAXY  DEPENDENCE  DEFECTS   Fabrication and characterization of metal-semiconductor-metal (msm) ultraviolet photodetectors on undoped gan/sapphire grown by mbe 期刊论文  iSwitch采集 Journal of crystal growth, 2000, 卷号: 218, 期号: 1, 页码: 1-6 作者:  Xu, HZ;  Wang, ZG;  Kawabe, M;  Harrison, I;  Ansell, BJ 收藏  |  浏览/下载：47/0  |  提交时间：2019/05/12 Gan  Photoluminescence  Optical quenching of photoconductivity  Native defect level  Molecular beam epitaxy   Photoluminescence and optical quenching of photoconductivity studies on undoped gan grown by molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232 作者:  Xu, HZ;  Wang, ZG;  Harrison, I;  Bell, A;  Ansell, BJ 收藏  |  浏览/下载：37/0  |  提交时间：2019/05/12 Gan  Photoluminescence  Optical quenching of photoconductivity  Native defect level  Molecular beam epitaxy   Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 218, 期号: 1, 页码: 1-6 Xu HZ; Wang ZG; Kawabe M; Harrison I; Ansell BJ; Foxon CT 收藏  |  浏览/下载：74/0  |  提交时间：2010/08/12 GaN  photoluminescence  optical quenching of photoconductivity  native defect level  molecular beam epitaxy  SINGLE-CRYSTAL GAN  I-N PHOTODIODES  HIGH-SPEED  PHOTOCONDUCTORS  ALXGA1-XN  SIMULATIONS  DETECTORS  SAPPHIRE  LAYERS   Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232 Xu HZ; Wang ZG; Harrison I; Bell A; Ansell BJ; Winser AJ; Cheng TS; Foxon CT; Kawabe M 收藏  |  浏览/下载：59/0  |  提交时间：2010/08/12 GaN  photoluminescence  optical quenching of photoconductivity  native defect level  molecular beam epitaxy  N-TYPE GAN  DEEP-LEVEL DEFECTS  YELLOW LUMINESCENCE  MAGNETIC-RESONANCE  THIN-FILMS