机构

• 半导体研究所 [10]
• 物理研究所 [9]
• 上海微系统与信息技术... [3]
• 理论物理研究所 [2]
• 金属研究所 [1]
• 宁波材料技术与工程研... [1]
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采集方式

• OAI收割 [26]
• iSwitch采集 [2]

内容类型

• 期刊论文 [27]
• 会议论文 [1]

发表日期

• 2018 [1]
• 2017 [1]
• 2015 [1]
• 2013 [2]
• 2012 [1]
• 2011 [4]
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学科主题

• 半导体材料 [4]
• Physics [3]
• 半导体物理 [3]
• Materials ... [1]
• Physics, A... [1]
• Physics, C... [1]
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筛选

浏览/检索结果: 共28条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides 期刊论文  OAI收割 JOURNAL OF MATERIALS CHEMISTRY C, 2018, 卷号: 6, 期号: 12, 页码: 3058-3064 作者:  Chun, Byong Sun;  Xu, Hongjun;  Hsu, Ming-Chien;  Fuh, Huei-Ru;  Feng, Jiafeng   |  收藏  |  浏览/下载：57/0  |  提交时间：2018/12/04 Vanadium Disulfide Nanosheets  2-dimensional Electron-gas  Negative Magnetoresistance  Giant Magnetoresistance  Anderson Localization  Absence  Dimensions  Ferromagnetism  Diffusion  Graphene   Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3 期刊论文  OAI收割 NANO LETTERS, 2017, 卷号: 17, 页码: 7878-7885 作者:  Yu, Jinling;  Zeng, Xiaolin;  Zhang, Liguo;  He, Ke;  Cheng, Shuying   |  收藏  |  浏览/下载：39/0  |  提交时间：2018/05/31 Photoinduced inverse spin Hall effect  surface state  topological insulator  Bi2Se3  two-dimensional electron gas   Colossal positive magnetoresistance in surface-passivated oxygen-deficient strontium titanite 期刊论文  OAI收割 SCIENTIFIC REPORTS, 2015, 卷号: 5, 页码: — 作者:  David, A;  Tian, YF;  Yang, P;  Gao, XY;  Lin, WN 收藏  |  浏览/下载：25/0  |  提交时间：2015/12/09 2-DIMENSIONAL ELECTRON-GAS  ROOM-TEMPERATURE  OXIDE HETEROSTRUCTURES  INTERFACE  MOBILITY  SILICON  SRTIO3   Negative Quantum Capacitance Induced by Midgap States in Single-layer Graphene 期刊论文  OAI收割 Scientific Reports, 2013, 卷号: 3 L. Wang; Y. Wang; X. L. Chen; W. Zhu; C. Zhu; Z. F. Wu; Y. Han; M. W. Zhang; W. Li; Y. H. He; W. Xiong; K. T. Law; D. S. Su; N. Wang 收藏  |  浏览/下载：31/0  |  提交时间：2013/12/24 2-dimensional electron  yttrium-oxide  compressibility  transport  fermions  gas   High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities 期刊论文  OAI收割 CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 11 Chen, YZ; Pryds, N; Sun, JR; Shen, BG; Linderoth, S 收藏  |  浏览/下载：38/0  |  提交时间：2014/01/16 oxide interfaces  two-dimensional electron gas (2DEG)  SrTiO3  oxygen vacancies   Current-induced nuclear spin depolarization at Landau level filling factor nu=1/2 期刊论文  OAI收割 PHYSICAL REVIEW B, 2012, 卷号: 86, 期号: 11 Li, YQ; Umansky, V; von Klitzing, K; Smet, JH 收藏  |  浏览/下载：39/0  |  提交时间：2013/09/17 2-DIMENSIONAL ELECTRON-GAS  HALL-EFFECT REGIME  GAAS-ALXGA1-XAS HETEROSTRUCTURES  COMPOSITE FERMIONS  QUANTUM-WELLS  POLARIZATION  NMR  TEMPERATURES  RESONANCE  DYNAMICS   A theoretical calculation of the impact of gan cap and alxga1-xn barrier thickness fluctuations on two-dimensional electron gas in a gan/alxga1-xn/gan heterostructure 期刊论文  iSwitch采集 Ieee transactions on electron devices, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275 作者:  Liu, Guipeng;  Wu, Ju;  Lu, Yanwu;  Zhang, Biao;  Li, Chengming 收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12 Cap-thickness-fluctuation (ctf) and barrierthickness fluctuation (btf) scattering  Interface roughness scattering  Two dimensional electron gas (2deg)   Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 12 Lv, YJ; Lin, ZJ; Zhang, Y; Meng, LG; Luan, CB; Cao, ZF; Chen, H; Wang, ZG 收藏  |  浏览/下载：31/0  |  提交时间：2013/09/24 2-DIMENSIONAL ELECTRON-GAS  INTERFACIAL LAYER  MOBILITY   Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512 Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG 收藏  |  浏览/下载：75/9  |  提交时间：2011/07/05 2-DIMENSIONAL ELECTRON-GAS  INTERFACIAL LAYER  MOBILITY   The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文  OAI收割 applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi Y;  Lin DF;  Peng EC 收藏  |  浏览/下载：25/0  |  提交时间：2011/09/14 2-DIMENSIONAL ELECTRON-GAS  ALGAN/GAN/INGAN/GAN DH-HEMTS  MILLIMETER-WAVE APPLICATIONS  FIELD-EFFECT TRANSISTORS  HETEROJUNCTION FETS  HETEROSTRUCTURES  PASSIVATION  CONFINEMENT  PERFORMANCE  BARRIERS