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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
金属研究所 [3]
半导体研究所 [3]
宁波材料技术与工程研... [1]
新疆理化技术研究所 [1]
兰州化学物理研究所 [1]
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期刊论文 [8]
学位论文 [1]
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2010 [3]
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Enhanced performance of AlN SAW devices with wave propagation along the 〈11?20〉 direction on c-plane sapphire substrate
期刊论文
iSwitch采集
Journal of Physics D: Applied Physics, 2019, 卷号: 52, 期号: 21
作者:
Ai,Yujie
;
Yang,Shuai
;
Cheng,Zhe
;
Zhang,Lian
;
Jia,Lifang
收藏
  |  
浏览/下载:325/0
  |  
提交时间:2019/05/12
AlN film
surface acoustic wave
propagation direction
quality factor
insertion loss
elastic constant
反应磁控溅射制备AlN薄膜及其耐腐蚀性能研究
学位论文
OAI收割
北京: 中国科学院大学, 2018
作者:
王雄伟
  |  
收藏
  |  
浏览/下载:164/0
  |  
提交时间:2019/10/31
反应磁控溅射
AlN薄膜
腐蚀
极化曲线
电化学阻抗谱
Reactive magnetron sputtering
AlN film
Corrosion
Polarization curve
Electrochemical impedance spectroscopy
Tuning photonic crystal fabrication by nanosphere lithography and surface treatment of AlGaN-based ultraviolet light-emitting diodes
期刊论文
OAI收割
MATERIALS & DESIGN, 2018, 卷号: 160, 页码: 661-670
作者:
Chee, Kuan W. A.
;
Guo, Wei
;
Wang, John R.
;
Wang, Yong
;
Chen, Yue-e
  |  
收藏
  |  
浏览/下载:133/0
  |  
提交时间:2019/12/18
EXTERNAL QUANTUM EFFICIENCY
THIN-FILM
EXTRACTION EFFICIENCY
SPONTANEOUS EMISSION
ENHANCEMENT
GAN
PHOTOLUMINESCENCE
WELLS
BLUE
ALN
Room-Temperature Ferromagnetism in Ti-Doped AlN Film
期刊论文
OAI收割
INTEGRATED FERROELECTRICS, 2013, 卷号: 146, 期号: 1, 页码: 154-160
作者:
Ren Yinshuan
;
Pan Dong
;
Jian Jikang
;
Jiang Xiaokang
;
Li Jin
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2013/11/07
Radio frequency reactive sputtering
AlN film
Ti doping
diluted magnetic semiconductor
Corrosion behavior of Ti(3)AlC(2) in NaOH and H(2)SO(4)
期刊论文
OAI收割
Journal of the European Ceramic Society, 2010, 卷号: 30, 期号: 15, 页码: 3227-3234
D. Li
;
Y. Liang
;
X. X. Liu
;
Y. C. Zhou
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/04/13
Ti(3)AlC(2)
Corrosion
Electrochemical measurements
XPS
electrochemical-behavior
passive film
ti3sic2
ti4aln3
phases
ti2aln
alloy
hcl
ti
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
;
Zhang SM (Zhang Shu-Ming)
;
Jiang DS (Jiang De-Sheng)
;
Liu ZS (Liu Zong-Shun)
;
Zhao DG (Zhao De-Gang)
;
Wang H (Wang Hui)
;
Wang YT (Wang Yu-Tian)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:136/4
  |  
提交时间:2010/04/13
GaN
Si (111) substrate
metalorganic chemical vapour deposition
AlN buffer layer
AlGaN interlayer
: VAPOR-PHASE EPITAXY
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
ALXGA1-XN
FILM
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
期刊论文
OAI收割
nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Liu JM (Liu J. M.)
;
Liu XL (Liu X. L.)
;
Xu XQ (Xu X. Q.)
;
Wang J (Wang J.)
;
Li CM (Li C. M.)
;
Wei HY (Wei H. Y.)
;
Yang SY (Yang S. Y.)
;
Zhu QS (Zhu Q. S.)
;
Fan YM (Fan Y. M.)
;
Zhang XW (Zhang X. W.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:154/21
  |  
提交时间:2010/08/17
Valence band offset
w-InN/h-BN heterojunction
X-ray photoelectron spectroscopy
Conduction band offset
Valence band offset
NEGATIVE ELECTRON-AFFINITY
INDIUM NITRIDE
WURTZITE GAN
SURFACE
FILM
ALN
TRANSPORT
EMISSION
NAXWO3
GROWTH
Growth of well-oriented Al(x)In(1-x)N films by sputtering at low temperature
期刊论文
OAI收割
Journal of Alloys and Compounds, 2009, 卷号: 479, 期号: 1-2, 页码: 812-815
C. J. Dong
;
M. Xu
;
Q. Y. Chen
;
F. S. Liu
;
H. P. Zhou
;
Y. Wei
;
H. X. Ji
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2012/04/13
Al(x)In(1-x)N film
Magnetron sputtering
Crystallinity
Resistance
molecular-beam epitaxy
fundamental-band gap
vapor-phase epitaxy
optical-properties
energy
alinn
inn
aln
nanowires
inxal1-xn
Characterization and photoluminescence of AIN : Eu films
期刊论文
OAI收割
Optical Materials, 2006, 卷号: 28, 期号: 8-9, 页码: 1029-1036
F. S. Liu
;
H. W. Dong
;
Q. L. Liu
;
J. K. Liang
;
J. Luo
;
Y. Zhang
;
L. T. Yang
;
G. H. Rao
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/04/13
luminescence
semiconductor
A1N : Eu film
red-light emission
aln thin-films
doped gan
visible emission
tb
ions
er
nitride
electroluminescence
cathodoluminescence
voltage