机构

• 半导体研究所 [9]
• 金属研究所 [7]
• 物理研究所 [4]
• 长春光学精密机械与物... [2]
• 软件研究所 [2]
• 宁波材料技术与工程研... [1]
• 更多

采集方式

• OAI收割 [24]
• iSwitch采集 [1]

内容类型

• 期刊论文 [23]
• 会议论文 [2]

发表日期

• 2022 [1]
• 2018 [2]
• 2012 [1]
• 2011 [9]
• 2009 [2]
• 2008 [1]
• 更多

学科主题

• 半导体物理 [4]
• 半导体材料 [3]
• 光电子学 [1]

筛选

浏览/检索结果: 共25条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Electrochemical extraction kinetics of Nd on reactive electrodes 期刊论文  OAI收割 SEPARATION AND PURIFICATION TECHNOLOGY, 2022, 卷号: 281 作者:  Yang, Da-Wei;  Jiang, Shi-Lin;  Liu, Ya-Lan;  Geng, Jun-Shan;  Li, Mei   |  收藏  |  浏览/下载：23/0  |  提交时间：2021/12/01 KCL EUTECTIC SALT  LIQUID GALLIUM ELECTRODE  EXCHANGE CURRENT-DENSITY  RARE-EARTH-ELEMENTS  THERMODYNAMIC PROPERTIES  CO-REDUCTION  AL ALLOYS  URANIUM  ACTINIDES  NEODYMIUM   Photoelectric Characteristics of Micro Flip-Chip AlGaInP Light Emitting Diode Array 期刊论文  OAI收割 Guangxue Xuebao/Acta Optica Sinica, 2018, 卷号: 38, 期号: 9 作者:  Ban, Zhang;  Liang, Jingqiu;  Lu, Jinguang;  Li, Yang   |  收藏  |  浏览/下载：47/0  |  提交时间：2019/09/17 Flip chip devices  Aluminum alloys  Copper  Diodes  Energy utilization  Gallium alloys  Heat convection  Heat resistance  III-V semiconductors  Indium alloys  Light emitting diodes  Microchannels  Numerical methods  Optical devices  Photoelectricity  Polydimethylsiloxane  Semiconductor alloys  Silicones  Temperature   Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文  OAI收割 ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704 作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian   |  收藏  |  浏览/下载：24/0  |  提交时间：2019/09/17 Ultraviolet lasers  Aluminum alloys  Aluminum gallium nitride  Aluminum nitride  Defects  Gallium alloys  III-V semiconductors  Lasers  Lattice mismatch  Quantum well lasers  Semiconductor alloys  Semiconductor quantum wells  Stresses  Thermal expansion   a bisection-function technique to characterize heat transport in high-power gan-based light-emitting-diodes package 会议论文  OAI收割 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012, Shanghai, China, August 28, 2012 - August 31, 2012 Cheng Liwen; Sheng Yang; Chang Shengxia; Hu Weida; Lu Wei   |  收藏  |  浏览/下载：21/0  |  提交时间：2013/09/22 Computer simulation  Gallium alloys  Gallium nitride  Heat transfer  Optoelectronic devices  Transient analysis   Metal electrode influence on the wet selective etching of gaas/algaas 期刊论文  iSwitch采集 Journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 4 作者:  Wang Jie;  Han Qin;  Yang Xiao-Hong;  Wang Xiu-Ping;  Ni Hai-Qiao 收藏  |  浏览/下载：127/0  |  提交时间：2019/05/12 Aluminium compounds  Chromium alloys  Copper alloys  Electrochemical analysis  Electrochemical electrodes  Etching  Gallium arsenide  Gold alloys  Iii-v semiconductors  Metallic thin films  Titanium alloys   a genetic clustering algorithm using a message-based similarity measure 会议论文  OAI收割 Chang Dongxia; Zhao Yao; Zheng Changwen; Zhang Xianda 收藏  |  浏览/下载：23/0  |  提交时间：2011/10/10 Chromosomes  Gallium alloys  Genetic algorithms  Mathematical operators  Message passing  Real variables   Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:     |  收藏  |  浏览/下载：82/0  |  提交时间：2012/06/14 Atomic force microscopy  Buffer layers  Epitaxial growth  Gallium alloys  Gallium arsenide  Germanium  Growth temperature  High resolution transmission electron microscopy  Molecular beam epitaxy  Molecular beams  Semiconducting gallium  Semiconductor device structures  Semiconductor quantum wells  Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells   Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy 期刊论文  OAI收割 physica status solidi(c) current topics in solid state physics, Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 2011, 卷号: 8, 8, 期号: 2, 页码: 393-395, 393-395 作者:  Wang, S.L.;  Meng, K.K.;  Chen, L.;  Xu, P.F.;  Meng, H.J.   |  收藏  |  浏览/下载：79/0  |  提交时间：2012/06/14 Drop formation  Epitaxial growth  Ferromagnetic materials  Ferromagnetism  Gallium alloys  High resolution transmission electron microscopy  Magnetic semiconductors  Manganese  Semiconducting silicon  Semiconductor growth  Semiconductor quantum dots  Drop Formation  Epitaxial Growth  Ferromagnetic Materials  Ferromagnetism  Gallium Alloys  High Resolution Transmission Electron Microscopy  Magnetic Semiconductors  Manganese  Semiconducting Silicon  Semiconductor Growth  Semiconductor Quantum Dots   2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan   |  收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14 Alignment  Atomic force microscopy  Atomic spectroscopy  Detectors  Epitaxial growth  Gallium alloys  Gallium arsenide  Indium arsenide  Infrared detectors  Molecular beam epitaxy  Molecular beams  Optoelectronic devices  Semiconducting gallium  Superlattices  Transmission electron microscopy  X ray diffraction  Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction   Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011 作者:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang   |  收藏  |  浏览/下载：37/0  |  提交时间：2012/06/14 Carrier concentration  Etching  Gallium alloys  Optical properties  Point defects  Raman spectroscopy  Semiconducting gallium compounds  Vapor phase epitaxy  Vapors  Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors