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Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共15条,第1-10条 帮助

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The effect of cavities on recrystallization growth of high-fluence He implanted-SiC 期刊论文  OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2021, 卷号: 509, 页码: 68-72
作者:  
Zhang, Tongmin;  He, Xiaoxun;  Chen, Limin;  Li, Jun;  Liao, Qing
  |  收藏  |  浏览/下载:101/0  |  提交时间:2022/01/07
Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature 期刊论文  OAI收割
MATERIALS, 2020, 卷号: 13, 期号: 24, 页码: 13
作者:  
Wang, Tao;  Yang, Zhen;  Li, Bingsheng;  Xu, Shuai;  Liao, Qing
  |  收藏  |  浏览/下载:72/0  |  提交时间:2021/12/13
Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature 期刊论文  OAI收割
MATERIALS, 2020, 卷号: 13, 期号: 24
作者:  
Wang, Tao;  Yang, Zhen;  Li, Bingsheng;  Xu, Shuai;  Liao, Qing
  |  收藏  |  浏览/下载:12/0  |  提交时间:2021/12/01
Damage and recovery behavior of 4H-SiC implanted with He ions 期刊论文  OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 449, 页码: 54-57
作者:  
Zhang, Chonghong;  Yang, Yitao;  Su, Changhao;  Ding, Zhaonan;  Song, Yin
  |  收藏  |  浏览/下载:116/0  |  提交时间:2019/11/10
6H-SiC blistering efficiency as a function of the hydrogen implantation fluence 期刊论文  OAI收割
APPLIED SURFACE SCIENCE, 2019, 卷号: 466, 页码: 141-150
作者:  
Daghbouj, N.;  Li, B. S.;  Karlik, M.;  Declemy, A.
  |  收藏  |  浏览/下载:51/0  |  提交时间:2019/03/27
Study of surface exfoliation on 6H-SiC induced by H-2(+) implantation 期刊论文  OAI收割
PHYSICA B-CONDENSED MATTER, 2017, 卷号: 508, 页码: 104-111
作者:  
Zhang, L.;  Li, B. S.
  |  收藏  |  浏览/下载:14/0  |  提交时间:2018/05/31
Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon 期刊论文  OAI收割
JOURNAL OF ELECTRONIC MATERIALS, 2016, 卷号: 45, 期号: 10, 页码: 5064-5068
作者:  
Wang, BY;  Zhang P(张鹏);  Cao XZ(曹兴忠);  Wang BY(王宝义);  Wang, Z
  |  收藏  |  浏览/下载:39/0  |  提交时间:2017/07/24
Structures and optical properties of H-2(+)-implanted GaN epi-layers 期刊论文  OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 卷号: 48
作者:  
Li, B. S.;  Wang, Z. G.
  |  收藏  |  浏览/下载:36/0  |  提交时间:2018/07/05
Implantation temperature and thermal annealing behavior in H-2(+)-implanted 6H-SiC 期刊论文  OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 卷号: 316, 页码: 239-244
作者:  
Li, B. S.;  Wang, Z. G.;  Jin, J. F.
  |  收藏  |  浏览/下载:37/0  |  提交时间:2018/07/05
The effects of Xe irradiation on He and H co-implanted Si 期刊论文  OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2012, 卷号: 167, 期号: 3, 页码: 212-219
作者:  
Zhang, CH;  Li, BS;  Yang, YT
  |  收藏  |  浏览/下载:25/0  |  提交时间:2015/10/15