机构

• 半导体研究所 [21]
• 上海微系统与信息技术... [8]
• 金属研究所 [2]
• 长春光学精密机械与物... [1]
• 福建物质结构研究所 [1]
• 新疆理化技术研究所 [1]
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采集方式

• OAI收割 [27]
• iSwitch采集 [8]

内容类型

• 期刊论文 [34]
• 会议论文 [1]

发表日期

• 2022 [2]
• 2020 [1]
• 2019 [1]
• 2011 [5]
• 2010 [5]
• 2009 [2]
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学科主题

• Chemistry,... [8]
• 半导体材料 [4]
• 半导体物理 [4]
• 光电子学 [3]
• Metals [1]
• 半导体器件 [1]
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筛选

浏览/检索结果: 共35条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Low-Temperature As-Doped In2O3Nanowires for Room Temperature NO2Gas Sensing 期刊论文  OAI收割 ACS Applied Nano Materials, 2022, 卷号: 5, 期号: 6, 页码: 7983-7992 作者:  Wang, Hang;  Fan, Guijun;  Yang, Zaixing;  Han, Ning;  Chen, Yunfa   |  收藏  |  浏览/下载：0/0  |  提交时间：2023/06/26 Catalysts - Chemical sensors - Chemical vapor deposition - CMOS integrated circuits - Copper oxides - Crystalline materials - Gas detectors - Gas sensing electrodes - III-V semiconductors - Indium arsenide - MOS devices - Oxide semiconductors - Temperature   Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy 期刊论文  OAI收割 NANO RESEARCH, 2022, 页码: 6 作者:  Dai, Jiuxiang;  Yang, Teng;  Jin, Zhitong;  Zhong, Yunlei;  Hu, Xianyu   |  收藏  |  浏览/下载：36/0  |  提交时间：2022/07/14 two-dimensional materials  van der Waals epitaxy  indium arsenide  nonlayered material   1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy 期刊论文  OAI收割 THIN SOLID FILMS, 2020, 卷号: 709, 期号: 9, 页码: 1-5 作者:  Sailai, M (Sailai, Momin)[ 1 ];  Lei, QQ (Lei, Qi Qi)[ 1,2 ];  Aierken, A (Aierken, Abuduwayiti)[ 1,3 ];  Heini, M (Heini, Maliya)[ 1,4 ];  Zhao, XF (Zhao, Xiao Fan)[ 1 ]   |  收藏  |  浏览/下载：41/0  |  提交时间：2020/10/23 Gallium indium arsenide nitride alloy  Electron irradiation  Photoluminescence  Thermal annealing  Arrhenius plot   Extracting more light for vertical emission: high power continuous wave operation of 1.3-m quantum-dot photonic-crystal surface-emitting laser based on a flat band 期刊论文  OAI收割 Light: Science and Applications, 2019, 卷号: 8, 期号: 1 作者:  H.-Y.Lu;  S.-C.Tian;  C.-Z.Tong;  L.-J.Wang;  J.-M.Rong   |  收藏  |  浏览/下载：32/0  |  提交时间：2020/08/24 Photonic crystals,Arsenic compounds,Crystal structure,III-V semiconductors,Indium arsenide,Nanocrystals,Quantum dot lasers,Semiconductor quantum dots,Surface emitting lasers   Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots 期刊论文  OAI收割 physica e: low-dimensional systems and nanostructures, 2011, 卷号: 44, 期号: 3, 页码: 686-689 Li, Y.Q.; Wang, X.D.; Xu, X.N.; Liu, W.; Yang, F.H.; Zeng, Y.P. 收藏  |  浏览/下载：18/0  |  提交时间：2012/06/14 Electron absorption  Indium arsenide  Logic circuits  MODFETS  Modulation  Two dimensional electron gas   Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 105002 Qiu, Yingping; Wang, Yang; Shao, Yongbo; Zhou, Daibing; Liang, Song; Zhao, Lingjuan; Wang, Wei 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/14 Absorption  Capacitance  Fabrication  Light extinction  Semiconducting indium gallium arsenide  Waveguides   2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei   |  收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14 Alignment  Atomic force microscopy  Atomic spectroscopy  Detectors  Epitaxial growth  Gallium alloys  Gallium arsenide  Indium arsenide  Infrared detectors  Molecular beam epitaxy  Molecular beams  Optoelectronic devices  Semiconducting gallium  Superlattices  Transmission electron microscopy  X ray diffraction  Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction   Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 optoelectronics letters, Optoelectronics Letters, 2011, 2011, 卷号: 7, 7, 期号: 5, 页码: 325-329, 325-329 作者:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng   |  收藏  |  浏览/下载：26/0  |  提交时间：2012/06/14 Epitaxial growth  Gallium arsenide  Growth(materials)  Molecular beam epitaxy  Semiconducting gallium  Semiconducting indium  Semiconductor quantum wells  Epitaxial Growth  Gallium Arsenide  Growth(Materials)  Molecular Beam Epitaxy  Semiconducting Gallium  Semiconducting Indium  Semiconductor Quantum Wells   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |  浏览/下载：34/0  |  提交时间：2012/06/14 Buffer layers  Epitaxial growth  Gallium alloys  Indium antimonides  Molecular beam epitaxy  Molecular beams  Optical waveguides  Optimization  Semiconducting gallium arsenide  Semiconductor quantum wells  Tellurium  Tellurium compounds  Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds   Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: 3 作者:  Cao, Yu-Lian;  Yang, Tao;  Xu, Peng-Fei;  Ji, Hai-Ming;  Gu, Yong-Xian 收藏  |  浏览/下载：37/0  |  提交时间：2019/05/12 Excited states  Gallium arsenide  Iii-v semiconductors  Indium compounds  Laser tuning  Optical films  Quantum dot lasers  Silicon compounds  Tantalum compounds